DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data V(BR)DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.26A 0.23A Description DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D D G ESD HBM >6kV S G Gate Protection Diode Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMG301NU-7 DMG301NU-13 Notes: Compliance Standard Standard Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N5K = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test Site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test Site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMG301NU Document number: DS36226 Rev. 3 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D September 2014 © Diodes Incorporated DMG301NU Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS 8 V A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 0.26 0.21 Continuous Drain Current (Note 6) VGS = 2.7V Steady State TA = +25°C TA = +70°C ID 0.23 0.18 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 1.5 A Maximum Body Diode Continuous Current (Note 6) IS 0.5 A Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case PD RθJA Operating and Storage Temperature Range Electrical Characteristics Value 0.32 0.4 369 296 RθJC 115 TJ, TSTG -55 to +150 Units W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 25 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 20V, VGS = 0V Gate-Body Leakage IGSS 100 nA VGS = 8V, VDS = 0V VGS(th) 0.7 1.1 V VDS = VGS, ID = 250µA 4 Ω VGS = 4.5V, ID = 0.4A 5 Ω VGS = 2.7V, ID = 0.2A ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS 1 S VDS = 5V, ID = 0.4A Diode Forward Voltage VSD 0.76 1.2 V VGS = 0V, IS = 0.29A Input Capacitance Ciss 27.9 42 Output Capacitance Coss 6.1 9.2 pF VDS = 10V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 5V, ID = 0.2A nS VGS = 4.5V, VDS = 6V ID = 0.5A, RG = 50Ω DYNAMIC CHARACTERISTICS (Note 8) Crss 2.0 3.0 Gate Resistance RG 26.4 Total Gate Charge Qg 0.36 Gate-Source Charge Qgs 0.06 Gate-Drain Charge Qgd 0.04 Turn-On Delay Time tD(on) 2.9 Turn-On Rise Time tr 1.8 Turn-Off Delay Time tD(off) 6.6 tf 2.3 Turn-Off Fall Time Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG301NU Document number: DS36226 Rev. 3 - 2 2 of 6 www.diodes.com September 2014 © Diodes Incorporated DMG301NU 1 1.0 VGS = 8.0V VGS = 4.0V 0.9 0.7 VGS = 2.7V 0.6 VGS = 2.5V 0.5 0.4 0.3 VGS = 1.5V 0.1 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.5 0.4 0.3 0 3 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 2 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () T A = 150°C 0.6 0.1 VGS = 1.2V 0.0 0 1.2 VGS = 2.7V 0.9 VGS = 4.5V 0.6 0.3 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 125°C TA = -55°C 0.7 0.2 0.2 0 TA = 85°C T A = 25°C 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 4.5V 0.8 VDS = 5.0V 0.9 VGS = 2.0V 1.6 1.4 VGS = 4.5V ID = 500mA 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMG301NU Document number: DS36226 Rev. 3 - 2 3 of 6 www.diodes.com VGS = 4.5V 1.8 T A = 150°C 1.6 1.4 TA = 125°C 1.2 TA = 85°C 1 0.8 TA = 25°C 0.6 TA = -55°C 0.4 0.2 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 1.5 1.2 VGS = 4.5V ID = 500mA 0.9 0.6 0.3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2014 © Diodes Incorporated DMG301NU 1 1.1 1 0.9 ID = 1mA 0.8 ID = 250µA 0.7 0.6 T A = 150°C 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.2 TA = 125°C 0.6 0.4 T A = 85°C 0.2 TA = 25°C 0.5 T A = -55°C 0 0 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 100 CT, JUNCTION CAPACITANCE (pF) VGS GATE THRESHOLD VOLTAGE (V) 8 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 6 VDS = 15V ID = 200mA 4 2 Ciss 10 Coss C rss f = 1MHz 0 0 1 0.1 0.2 0.3 0.4 0.5 0.6 Qg, TOTAL GATE CHARGE (nC) Figure 9 Gate Charge 0.7 1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 25 RDS(on) Limited ID, DRAIN CURRENT (A) DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.01 TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMG301NU Document number: DS36226 Rev. 3 - 2 100 4 of 6 www.diodes.com September 2014 © Diodes Incorporated DMG301NU D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 RJA(t) = r(t) * RJA RJA = 373°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. All 7° H K1 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E C X DMG301NU Document number: DS36226 Rev. 3 - 2 E 5 of 6 www.diodes.com September 2014 © Diodes Incorporated DMG301NU IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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