RB751V40T1G Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc Low Reverse Current NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 40 V SCHOTTKY BARRIER DIODE 1 CATHODE MAXIMUM RATINGS Rating 2 Symbol Value Unit VRM 40 V Reverse Voltage VR 30 Vdc Forward Continuous Current (DC) IF 30 mA Peak Forward Surge Current IFSM 500 mA Electrostatic Discharge ESD Peak Reverse Voltage 2 ANODE 1 SOD−323 CASE 477 STYLE 1 HBM Class: 1C MM Class: A MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad 5E MG G 5E = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† RB751V40T1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVRB751V40T1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 5 1 Publication Order Number: RB751V40T1/D RB751V40T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR − 300 500 nAdc Forward Voltage (IF = 1.0 mAdc) VF − 0.28 0.37 Vdc Reverse Breakdown Voltage (IR = 10 μA) 820 Ω +10 V 2k 100 μH 0.1 μF IF IF tr 0.1 μF tp t trr t 10% DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) RB751V40T1G 1000 IR , REVERSE CURRENT (μA) 1.0 150°C TA = 150°C 100 125°C 10 85°C 1.0 0.1 25°C 0.01 125°C 85°C 25°C -40°C -55°C 0.3 0.4 0.001 0.1 0 0.05 0.1 0.15 0.2 0.25 0.35 0.45 0.5 5 0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 2. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 3. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 3 16 18 35 RB751V40T1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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