SemiHow HFU5N60F 600v n-channel mosfet Datasheet

HFU5N60F / HFD5N60F
600V N-Channel MOSFET
Features
Key Parameters
‰ Originative New Design
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
HFU5N60F
TO-251
Parameter
Value
Unit
BVDSS
600
V
ID
5
A
RDS(on), Typ
1.8
ȍ
Qg, Typ
12.5
nC
HFD5N60F
TO-252
Symbol
D
D
S
S
G
G
Absolute Maximum Ratings
Symbol
VDSS
ID
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Unit
600
V
Drain Current
– Continuous (TC = 25୅)
5.0 *
A
Drain Current
– Continuous (TC = 100୅)
3.2 *
A
– Pulsed
20 *
A
ρ30
V
(Note 2)
110
mJ
Avalanche Current
(Note 1)
5.0
A
Repetitive Avalanche Energy
(Note 1)
7.8
mJ
Peak Diode Recovery dv/dt
(Note 3)
IDM
Drain Current
VGS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
(Note 1)
4.5
V/ns
Power Dissipation (TA = 25୅)*
2.5
W
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
78
W
TJ, TSTG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
dv/dt
TL
0.62
W/୅
-55 to +150
୅
300
୅
Value
Unit
1.6
୅/W
110
୅/W
50
୅/W
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case, Max.
RșJA
Junction-to-Ambient (minimum pad of 2 oz copper), Max.
RșJA
Junction-to-Ambient (* 1
in2
pad of 2 oz copper), Max.
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HFU5N60F_HFD5N60F
Oct 2016
Symbol
TJ=25୅ unless otherwise specified
Parameter
Test Conditions
Min
Typ
Max
Unit
On Characteristics
VGS
Gate Threshold Voltage
VDS = VGS, ID ȝ$
2.0
--
4.0
V
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.5 A
--
1.8
2.3
Ÿ
gFS
Forward Transconductance
VDS = 30 V ID = 2.5 A
--
3
--
S
VGS = 0 V, ID ȝ$
600
--
--
V
VDS = 600 V, VGS = 0 V
--
--
10
ȝ$
VDS = 480 V, TC = 125୅
--
--
100
ȝ$
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
nA
--
560
730
pF
--
70
90
pF
--
14
18.5
pF
--
19
48
ns
--
19
48
ns
--
35
80
ns
--
22
54
ns
--
12.5
16.5
nC
--
2.8
--
nC
--
4.0
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDS = 300 V, ID = 5 A,
RG = 25 Ÿ
(Note 4,5)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 480 V, ID = 5 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5 A
--
--
1.4
V
trr
Reverse Recovery Time
--
250
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5 A
diFGW $ȝV
--
1.6
--
ȝ&
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFU5N60F_HFD5N60F
Electrical Characteristics
HFU5N60F_HFD5N60F
Typical Characteristics
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
100
25oC
1
150oC
-55oC
* Notes :
1. 300us Pulse Test
2. TC = 25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
100
2
101
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
5
4
VGS = 10V
3
2
VGS = 20V
1
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
* Note : TJ = 25oC
0
0
2
4
6
8
10
0.1
0.2
12
0.4
0.6
ID, Drain Current[A]
800
Capacitances [pF]
Ciss
Coss
400
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
1.2
1.4
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
0.8
VSD, Source-Drain Voltage [V]
10
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 5.0A
0
10-1
100
101
0
0
3
6
9
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
15
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFU5N60F_HFD5N60F
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 2.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
5
4
ID, Drain Current [A]
10 Ps
101
100 Ps
1 ms
DC
100
* Notes :
1. TC = 25 oC
10 ms
2. TJ = 150 oC
3. Single Pulse
10-1
100
3
2
1
100 ms
1
2
10
0
25
103
10
50
Figure 9. Maximum Safe Operating Area
100
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
* Notes :
1. ZTJC(t) = 1.6 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
0.05
-1
10
0.02
PDM
0.01
single pulse
t1
-2
10
75
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
ZTJC(t), Thermal Response
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡
HFU5N60F_HFD5N60F
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡
HFU5N60F_HFD5N60F
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡
HFU5N60F_HFD5N60F
Package Dimension
pTwhrG
O{vTY\XsPG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡
HFU5N60F_HFD5N60F
Package Dimension
kTwhrG
O{vTY\YsPG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡