DMN95H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) ID TC = +25°C Low Input Capacitance High BVDSS Rating for Power Application 950V 2.2Ω@VGS = 10V 6A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications Mechanical Data Case: ITO220AB (Type TH) Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Motor Control Backlighting Terminal Connections: See Diagram Below DC-DC Converters Weight: 1.85 grams (Approximate) Power Management Functions ITO220AB (Type TH) Bottom View Top View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMN95H2D2HCTI Notes: Case ITO220AB (Type TH) Packaging 50 pieces/tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 95H2D2 = Manufacturer’s Marking 95H2D2 = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 17 = 2017) WW or WW = Week Code (01 to 53) YYWW DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 1 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN95H2D2HCTI Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Pulsed Drain Current (Note 6) L = 60mH L = 60mH Symbol VDSS VGSS TC = +25°C TC = +100°C Value 950 ±30 6 4 24 3.5 360 ID IDM IAS EAS Unit V V A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol TC = +25°C TC = +100°C TC = +25°C Unit PD Max 40 14 RθJC TJ, TSTG 3.6 -55 to +150 °C/W °C W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 950 1 VGS = 0V, ID = 250µA IDSS V Zero Gate Voltage Drain Current µA VDS = 950V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS 100 nA VGS = ±30V, VDS = 0V Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance VGS(TH) 3 4 5 V VDS = VGS, ID = 250µA RDS(ON) 2.2 1.2 Ω V VGS = 10V, ID = 3A VSD 1.7 0.85 Ciss Coss Crss 1487 113 1 pF 4.7 VDS = 25V, f = 1MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 720V, ID = 6A, VGS = 10V ns VDD = 450V, VGS = 10V, Rg = 25Ω, ID = 6A ns C IF = 6A, dI/dt = 100A/μs Gate Resistance Rg Total Gate Charge Qg 20.3 Gate-Source Charge Gate-Drain Charge Qgs 6.4 Qgd Turn-On Delay Time tD(ON) 6.1 39 Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Reverse Transfer Capacitance Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: tF tRR QRR VGS = 0V, IS = 6A 607 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 2 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN95H2D2HCTI 5.0 3 4.5 2.5 3.5 ID, DRAIN CURRENT (A) VGS = 10V 4.0 ID, DRAIN CURRENT (A) VDS = 20V VGS = 8.0V VGS = 7.0V 3.0 VGS = 6.0V 2.5 2.0 1.5 VGS = 5.5V 1.0 0.5 1 85oC 150oC 25oC 125oC VGS = 5.0V -55oC 0 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 10 3 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 4 2.5 2 1.5 VGS = 10V 1 0.5 0 0 3.5 3 ID = 3A 2.5 2 1.5 1 0 1 2 3 4 5 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 3 6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.5 0.5 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 VGS = 10V 5 150oC 4 125oC 3 85oC 2 25oC 1 -55oC 1 2 3 4 5 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 2 1.5 1 VGS = 10V, ID = 3A 0.5 0 0 0 2.5 -50 3 of 7 www.diodes.com -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature June 2017 © Diodes Incorporated DMN95H2D2HCTI 5.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 5 4 VGS = 10V, ID = 3A 3 2 1 5 4.5 ID = 1mA 4 ID = 250µA 3.5 3 2.5 0 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 10 VGS = 0V f = 1MHz CT, JUNCTION CAPACITANCE (pF) 9 IS, SOURCE CURRENT (A) -25 8 7 6 5 TJ = 150oC 4 TJ = 125oC 3 TJ = 85oC 2 TJ = 25oC TJ = 1 -55oC 1000 Ciss 100 Coss 10 1 Crss 0 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 10 20 40 60 80 100 120 140 160 180 200 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 6 VDS = 720V, ID = 6A 4 1 DC PW = 10s 0.1 PW = 1s PW = 100ms TJ(Max) = 150℃ PW = 10ms TC = 25℃ PW = 1ms Single Pulse DUT on 1*MRP Board PW = 100µs VGS = 20V 0.01 2 0 0.001 0 2 4 6 8 10 12 14 16 18 20 22 1 Qg (nC) Figure 10. Gate Charge DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN95H2D2HCTI 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA (t) = r(t) * RθJA RθJA = 42℃/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 5 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN95H2D2HCTI Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ITO220AB (Type TH) E A A1 Q5 Q5 Q1 Q1 Q3 Q4 H1 Aa Q Ab 02 D Da Ea 01(4x) b2 L1 b2a A2 b L C e E1 01 K1 Ea DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 01 6 of 7 www.diodes.com Q2 ITO220AB (Type TH) Dim Min Max Typ A 4.50 4.90 4.70 A1 2.34 2.74 2.54 A2 2.63 2.89 2.76 Aa 1.00 REF Ab 0.30 0.60 0.56 b 0.75 0.90 0.80 b2 1.23 1.38 1.28 b2a 1.25 1.45 1.35 c 0.45 0.60 0.50 D 15.47 16.27 15.87 Da 7.55 8.05 7.80 e 2.54 BSC E 9.86 10.46 10.16 E1 9.26 9.66 9.46 Ea 7.70 8.30 8.00 Eb 9.76 10.34 10.04 H1 6.70 REF L 12.58 13.38 12.98 L1 2.81 3.05 2.93 K1 0.65 0.75 0.70 Q 9.40 REF Q1 1.00 2.00 1.50 Q2 13.50 14.30 13.90 Q3 3.15 3.45 3.30 Q4 5.15 5.65 5.40 Q5 6.70 7.30 7.00 ØP 3.06 3.40 3.18 ØP1 1.40 1.60 1.50 ØP2 0.95 1.05 1.00 ØP3 3.30 3.60 3.45 θ1 3º 7º 5º θ2 45º R 0.50 REF DEP 0.05 0.15 0.10 All Dimensions in mm June 2017 © Diodes Incorporated DMN95H2D2HCTI IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMN95H2D2HCTI Document number: DS39275 Rev. 2 - 2 7 of 7 www.diodes.com June 2017 © Diodes Incorporated