Single N-channel Trench MOSFET 40V, 120A, 2.3mΩ General Description Features The MDP1723 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1723 is suitable device for Synchronous Rectification For Server and general purpose applications. VDS = 40V ID = 120A @VGS = 10V RDS(ON) < 2.3 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G TO-220 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 40 V VGSS ±20 V o TC=25 C (Silicon Limited) Continuous Drain Current o (1) TC=25 C (Package Limited) 191 ID TC=100 C 120 Pulsed Drain Current IDM o TC=25 C Power Dissipation 120 A o 480 138.9 PD o TC=100 C W 55.6 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 162.0 TJ, Tstg -55~150 Symbol Rating RθJA 50.0 RθJC 0.9 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Oct. 2014. Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP1723– Single N-Channel Trench MOSFET 40V MDP1723 Part Number Temp. Range Package Packing RoHS Status MDP1723TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 V Drain Cut-Off Current IDSS VDS = 32V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 1.9 2.3 mΩ gfs VDS = 10V, ID = 50A - 111 - S - 88.3 - - 22.9 - - 16.5 - - 5755.0 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 20V, ID = 50A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 203.3 - Output Capacitance Coss - 1830.0 - Turn-On Delay Time td(on) - 24.3 - - 14.7 - - 84.8 - - 42.7 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS =20V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 3.0 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr - 55.7 ns Body Diode Reverse Recovery Charge Qrr - 82.0 nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 18.0A, VGS = 10V. Oct. 2014. Version 1.0 2 MagnaChip Semiconductor Ltd. MDP1723– Single N-Channel Trench MOSFET 40V Ordering Information ID Drain Current [A] 70 4.5 V 60 50 4.0 V 40 30 20 3 ID, 0 10 20 30 Drain 40 VGS = 10V 2 1 2 VGS 3 4 1 3.5 V 10 0 0 0 0 1 2 3 4 10 20 30 40 5 50 60 70 80 90 110 ID, Drain Current [A] VDS, Drain-Source Voltage [V] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 20 ※ Notes : ※ Notes : 18 1. VGS = 10 V 2. ID = 50 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 100 1.5 1.0 0.5 ID = 50A 16 14 12 10 8 6 TA = 25 ℃ 4 2 0.0 -50 0 -25 0 25 50 75 100 125 4 150 5 6 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 90 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage ※ Notes : * Notes : VDS = 10V 100 IDR, Reverse Drain Current [A] 80 ID, Drain Current [A] 7 VGS, Gate to Source Volatge [V] o 70 60 o TA=25 C 50 40 30 20 VGS = 0V 10 TA=25 ℃ 1 10 0 0 1 2 3 4 5 6 7 8 0.0 VGS, Gate-Source Voltage [V] 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Oct. 2014. Version 1.0 0.3 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 Current 50 0 Drain-Source On-Resi tance [mohm] Drain-Source On-Resistance [mΩ] 6.0 V 5.0 V 80 MDP1723– Single N-Channel Trench MOSFET 40V 4 10 V 90 MagnaChip Semiconductor Ltd. = 60 10V [A 7 ※ Note : ID = 50A 8 7000 Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8000 VDS = 50V 6 4 Ciss 6000 5000 Coss 4000 3000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 2000 2 Crss 1000 0 0 0 10 20 30 40 50 60 70 80 90 0 100 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 200 3 10 180 100 us 10 ID, Drain Current [A] ID, Drain Current [A] 160 2 1 ms Operation in This Area is Limited by R DS(on) 1 10 10 ms 100 ms DC 140 Package Limited 120 100 80 60 0 10 40 Single Pulse TJ=Max rated 20 o TC=25 C -1 10 -1 0 10 1 10 0 25 2 10 10 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 Zθ JA(t), Thermal Response 10 D=0.5 0.2 10 0.1 0.05 -1 0.02 -2 10 0.01 -3 10 -4 10 ※ Notes : single pulse Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Oct. 2014. Version 1.0 4 MagnaChip Semiconductor Ltd. MDP1723– Single N-Channel Trench MOSFET 40V 9000 10 MDP1723– Single N-Channel Trench MOSFET 40V Package Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Oct. 2014. Version 1.0 5 MagnaChip Semiconductor Ltd. MDP1723– Single N-Channel Trench MOSFET 40V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Oct. 2014. Version 1.0 6 MagnaChip Semiconductor Ltd.