SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX617 ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A C E C Partmarking Detail - B 617 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ** ICM 12 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 15 V IC=100µA V(BR)CEO 15 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.3 100 nA VCB=10V Emitter Cut-Off Current IEBO 0.3 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 100 nA VCES=10V Collector-Emitter Saturation Voltage VCE(sat) 8 70 150 14 100 230 300 400 mV mV mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=4A, IB=50mA* IC=5A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.89 1.0 V IC=3A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 0.82 1.0 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 150 415 450 320 240 80 Transition Frequency fT 80 120 Output Capacitance Cobo 30 Turn-On Time t(on) Turn-Off Time t(off) IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns 160 ns VCC=10V, IC=3A IB1=IB2=50mA 40 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX617 TYPICAL CHARACTERISTICS 1 0.4 +25 °C IC/IB=60 0.3 100m 0.2 100°C 25°C 10m IC/IB=100 IC/IB=60 IC/IB=10 1m 1m -55°C 0.1 0.0 10m 1 100m 10 1mA 10mA 1.0 1.4 VCE=2V 10A 450 25°C 10A 100A IC/IB=60 1.2 1.0 0.8 -55°C 0.8 0.6 10A VCE(SAT) vs IC VCE(SAT) v IC 100°C 1A Collector Current IC - Collector Current (A) 1.2 100mA 25°C -55°C 225 0.4 0.6 100°C 0.4 0.2 0.2 0.0 0 1mA 10mA 100mA 1A 10A 100A 0.0 1mA Collector Current 1A Collector Current hFE vs IC 1.4 100mA 10mA VBE(SAT) vs IC 100 VCE=2V 1.2 1.0 0.8 10 -55°C 25°C 0.6 100°C 1 0.4 0.2 0.0 1mA 10mA 100mA 1A Collector Current VBE(ON) vs IC 10A 100A 0.1 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE (VOLTS) Safe Operating Area 100