NTMFS5C410NLT Power MOSFET 40 V, 0.9 mW, 315 A, Single N−Channel Features • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF − Wettable Flank Option for Enhanced Optical Inspection These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 0.9 mW @ 10 V 40 V Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 315 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) 223 Steady State TA = 100°C TA = 25°C G (4) W 167 S (1,2,3) A 48 PD W 3.8 IDM 900 A −55 to +175 °C IS 169 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 29 A) EAS 706 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 May, 2015 − Rev. 0 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C410L XXXXXX = (NTMFS5C410NLT) or XXXXXX = 410LWF XXXXXX = (NTMFS5C410NLTWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 MARKING DIAGRAM 1.9 TJ, Tstg TA = 25°C, tp = 10 ms N−CHANNEL MOSFET 34 TA = 100°C Operating Junction and Storage Temperature D (5,6) 83 ID 315 A 1.3 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX 1 See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NVMFS5C410NL/D NTMFS5C410NLT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 21.2 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 −5.75 mV/°C VGS = 10 V ID = 50 A 0.71 0.9 VGS = 4.5 V ID = 50 A 1.0 1.3 gFS VDS = 15 V, ID = 50 A 190 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 8862 VGS = 0 V, f = 1 MHz, VDS = 25 V CRSS 4156 pF 116 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 20 V; ID = 50 A 66 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 143 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 2.7 td(ON) 20 6.75 VGS = 4.5 V, VDS = 20 V; ID = 50 A nC 21.4 22 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 1.0 W tf 130 ns 66 177 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.73 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 79.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 39 ns 40.5 126 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C410NLT TYPICAL CHARACTERISTICS 200 ID, DRAIN CURRENT (A) 140 120 2.8 V 100 80 60 40 140 120 100 80 TJ = 25°C 60 40 TJ = 125°C 20 0 0.5 1.0 1.5 2.0 0 3.0 2.5 0 1.0 1.5 TJ = −55°C 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.0013 4.0 0.0012 0.0012 0.0011 TJ = 25°C VGS = 4.5 V 0.0010 TJ = 25°C ID = 50 A 0.0011 0.0009 0.0010 0.0008 0.0009 0.0007 0.0008 0.0006 VGS = 10 V 0.0006 0.0007 0.0005 3 4 5 6 7 8 9 VGS, GATE VOLTAGE (V) 10 0.0004 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 1M 1.7 VGS = 10 V ID = 40 A TJ = 150°C 100k IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 160 3.0 V 160 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 180 10 V to 3.2 V 180 1.5 1.3 1.1 TJ = 125°C 10k TJ = 85°C 1k 100 0.9 0.7 −50 −25 0 25 50 75 100 125 150 175 10 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C410NLT 11k CISS C, CAPACITANCE (pF) 9k 8k COSS 7k VGS = 0 V TJ = 25°C f = 1 MHz 6k 5k 4k 3k 2k CRSS 5 0 15 10 25 20 30 40 15 4 QGD QGS 2 0 0 20 10 VDS = 20 V TJ = 25°C ID = 50 A 60 40 80 120 100 5 140 0 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(off) tf tr 46 td(on) 10 VGS = 4.5 V VDD = 20 V ID = 50 A 1 41 36 31 26 TJ = 125°C 21 16 11 TJ = 150°C TJ = 25°C 6 10 1 100 0.3 0.4 0.5 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms 100 100 IDS (A) 1 ms dc TJ(initial) = 25°C IPEAK (A) 1000 20 6 QG, TOTAL GATE CHARGE (nC) 100 1 25 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10,00 t, TIME (ns) 35 30 QT IS, SOURCE CURRENT (A) 1k 0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 10k VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 ms TJ(initial) = 100°C 10 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 1 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS5C410NLT 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5C410NLT 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping† NTMFS5C410NLTT1G 5C410L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C410NLTWFT1G 410LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NTMFS5C410NLTT3G 5C410L DFN5 (Pb−Free) 5000 / Tape & Reel NTMFS5C410NLTWFT3G 410LWF DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C410NLT PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE K 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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