ETC2 DRAM-DDR3-UDIMM Ddr3 240-pin unbuffered-ecc dimm Datasheet

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Home > Embedded OEM > DRAM > DDR3
DRAM DDR3
DDR3
DDR2
UDIMM
DDR
RDIMM
SDR
UDIMM
SODIMM
mini DIMM
Speciality
Flash
DDR3 is the current mainstream dram technology
standardized by JEDEC, bringing further improvements
in power consumption and increased bandwidth over
DDR2. Available in power supply voltages of 1.5V
(DDR3) and 1.35V (DDR3L) and with transfer data
rates from 800Mb/s to 1.6Gb/s and beyond, DDR3 has
become the de facto mainstream memory technology
especially for server and notebook applications in the
1H of 2010. Many other applications are available in the
market today to take advantage of the superior
performance features of DDR3 and DDR3L. Wintec
currently offers following DDR3 and DDR3L Modules
and will continue to add more solutions as
DDR3/DDR3L enabled applications will proliferate.
SSD
ADD2
Modems
DDR3 240-Pin Unbuffered-ECC DIMMs
Standard Profile (1.181”) with Nominal Voltage (1.5V)
Density
1GB
Part Number
DIMM
Component
Config
Config
Rank
Voltage
WD3UE01GX809-xxxxx-yy
1 rank
128x72
128Mx8
1.5V
WD3UE02GX818-xxxxx-yy
2 rank
256x72
128Mx8
1.5V
WD3UE02GX809-xxxxx-yy
1 rank
256x72
256Mx8
1.5V
WD3UE04GX818-xxxxx-yy
2 rank
512x72
256Mx8
1.5V
DIMM
Component
Config
Config
2GB
4GB
Very Low Profile (0.72”) with Nominal Voltage (1.5V)
Density
1GB
2GB
Part Number
Rank
Voltage
WD3UE01GX809V-xxxxx-yy
1 rank
128x72
128Mx8
1.5V
WD3UE02GX818V-xxxxx-yy
2 rank
256x72
128Mx8
1.5V
Wintec Industries – OEM Embedded Design Center
4GB
WD3UE02GX809V-xxxxx-yy
1 rank
256x72
256Mx8
1.5V
WD3UE04GX818V-xxxxx-yy
2 rank
512x72
256Mx8
1.5V
DIMM
Component
Config
Config
DDR3 240-Pin DIMM - Unbuffered Non-ECC
Standard Profile (1.181”) with Nominal Voltage (1.5V)
Density
Part Number
1GB
Rank
Voltage
WD3UN01GX808-xxxxx-yy
1 rank
128x64
128Mx8
1.5V
WD3UN02GX816-xxxxx-yy
2 rank
256x64
128Mx8
1.5V
WD3UN02GX808-xxxxx-yy
1 rank
256x64
256Mx8
1.5V
4GB
WD3UN04GX816-xxxxx-yy
2 rank
512x64
256Mx4
1.5V
8GB
WD3UN08GX816-xxxxx-yy
2 rank
1024x64
512Mx4
1.5V
2GB
(xxxxx) Module speed (MHz) and Cas Latency
1066J : 1066MHz CL 7
=
1333L : 1333Mhz CL9
1600N :1600MHz CL11
(yy) =
(z) =
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DRAM Manufacturer and Die Revision
A: A-Die
P: Samsung
B: B-Die
H: Micron
C: C-Die
C: Hynix Buffer / Register set (Only applies to Registered/Buffered modules)
I: Inphi
D: IDT
L: Intel
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http://www.wintecind.com/oem/DRAM/DDR3/UDIMM.html[4/20/2012 1:21:21 PM]
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