MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS® TO-220AC • Trench MOS Schottky technology ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 2 1 1 MBR1090 MBR10100 MBRF1090 MBRF10100 PIN 1 PIN 1 CASE PIN 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TO-263AB K TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. 2 1 MBRB1090 MBRB10100 PIN 1 PIN 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) MECHANICAL DATA K HEATSINK Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade PRIMARY CHARACTERISTICS IFSM 150 A Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test VF 0.65 V Polarity: As marked TJ max. 150 °C Mounting Torque: 10 in-lbs maximum Package TO-220AC, ITO-220AC, TO-263AB Diode variations Single die IF(AV) 10 A VRRM 90 V, 100 V per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 130 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -65 to +150 °C Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Revision: 11-Sep-13 V Document Number: 89034 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A Maximum instantaneous forward voltage SYMBOL TC = 25 °C UNIT 0.80 IF = 10 A TC = 125 °C IF = 20 A TC = 125 °C VF (1) 0.65 V 0.75 TJ = 25 °C Maximum reverse current per at working peak reverse voltage MAX. IR (2) TJ = 125 °C 100 µA 6.0 mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL MBR MBRF MBRB RJA 60 - 60 RJC 2.0 3.5 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AC MBR10100CT-E3/4W UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.845 4W 50/tube Tube ITO-220AC MBRF10100CT-E3/4W 1.661 4W 50/tube Tube TO-263AB MBRB10100CT-E3/4W 1.384 4W 50/tube Tube TO-263AB MBRB10100CT-E3/8W 1.384 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 160 10 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 0 50 100 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve Revision: 11-Sep-13 150 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Document Number: 89034 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Junction to Case 10 1 MBR(B) 0.1 0.01 1.0 Instantaneous Forward Voltage (V) TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 30 40 50 60 70 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 20 100 10 10 TJ = 150 °C 10 1 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics 100 0.1 80 90 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics 100 Junction to Case 1 0.1 0.01 MBRF 0.001 0.1 1 10 100 t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 11-Sep-13 Document Number: 89034 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54)MAX. 0.370 (9.40) 0.360 (9.14) ITO-220AC 0.154 (3.91) DIA. 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 2 0.057 (1.45) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 0.671 (17.04) 0.651 (16.54) 0.600 (15.24) 0.580 (14.73) PIN 1 0.560 (14.22) 0.530 (13.46) PIN 1 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027(0.68) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 7° REF. 2 0.057 (1.45) 0.045 (1.14) CASE 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 7° REF. 0.076 (1.93) REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 1 0.404 (10.26) 0.384 (9.75) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0 to 0.01 (0 to 0.254) 0.105 (2.67) 0.095 (2.41) Revision: 11-Sep-13 0.205 (5.20) 0.195 (4.95) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Document Number: 89034 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: MBR10100/45 MBRB10100-E3/8W MBRF1090-E3/4W MBRB10100/31 MBR10100-E3/4W MBR1090-E3/4W MBRB10100-E3/4W MBRB1090-E3/4W MBRB1090-E3/8W MBRF10H45-E3/45 MBRF10100-E3/4W SI1563EDH-T1