CYSTEKEC MBR10200FP 10amp. schottky barrier rectifier Datasheet

CYStech Electronics Corp.
10Amp. Schottky Barrier Rectifiers
MBR10200FP
Features
IF(AV)
VRRM
Tj
VF
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 1/1
2 × 5A
200V
175°C
0.7V
• 175℃ operating junction temperature
• Low VF and low IR type
• Metal silicon junction, major carrier conduction
• 10A total (5A per diode leg)
• Guardring for over voltage protection
• Low power loss, high efficiency
• High surge capability
• Insulating package, insulating voltage=2500V DC, capacitance=45pF
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
• Pb-free lead plating package
Mechanical Data
• Case: TO-220FP molded plastic
• Mounting Position: Any
• Weight: 2.2 grams, 0.078 ounce approximately
• Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026
• Epoxy: UL 94V-0 rate flame retardant
• Mounting torque: 5 in.-lb. maximum
Equivalent Circuit
MBR10200FP
Outline
TO-220FP
AKA
MBR10200FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 2/2
Maximum Ratings and Electrical Characteristics (Per Diode Leg)
(Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Symbol
Min.
Typ.
Max.
Units
Maximum Recurrent peak reverse voltage
VRRM
200
V
Maximum RMS voltage
VRMS
140
V
Maximum DC blocking voltage
VDC
200
V
0.90
IF=5A, TC=25℃
Maximum instantaneous
0.7
0.74
IF=5A, TC=125℃
V
VF
forward voltage at
IF=10 A, TC=25℃
IF=10A, TC=125℃
Per Diode
Maximum Average forward
rectified current @ TC=133℃ Per Device
1.00
0.87
(Note 1)
IF(AV)
5
10
A
IFRM
10
A
IFSM
110
A
Peak repetitive reverse surge current (Note 1 ), TJ<175℃
VR=200 V, TC=25℃
Maximum instantaneous
reverse current at
VR=200 V, TC=125℃
IRRM
Voltage rate of change, (rated VR)
dV/dt
2
5
5
10,000
A
μA
mA
V/μs
Peak repetitive forward current (square wave,
20kHz, TC=133℃)
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Typical junction capacitance @ f=1MHz and applied
5V reverse voltage
ESD susceptibility (Note 2)
Operating junction and storage temperature range
IR
CJ
TJ ; Tstg
65
pF
8000
+175
-65
V
℃
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case
Maximum Thermal Resistance, Junction-to-ambient
Lead Temperature for Soldering Purposes : 1/8” from Case for 5 seconds
Symbol
Rth,j-c
Rth,j-a
TL
Value
3.5
60
300
Unit
°C/W
°C/W
°C
Ordering Information
Device
MBR10200FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs / Tube, 40 Tubes/Box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MBR10200FP
CYStek Product Specification
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 3/3
CYStech Electronics Corp.
Characteristic Curves
Maximum Non-Repetitive Forward Surge Current
Forward Current Derating Curve
200
Peak Forward Surge Current---IFSM (A)
Average Forward Current---Io(A)
12
10
8
resistive or inductive load
6
4
2
Tj=150℃, 8.3ms Single
Half Sine Wave, JEDEC
method, Per leg
150
100
50
0
0
0
25
50
75
100
125
150
1
175
Case Temperature---TC(℃)
100
Number of Cycles at 60Hz
Forward Current vs Forward Voltage
Junction Capacitance vs Reverse Voltage
100000
1000
Per leg
Junction Capacitance---CJ(pF)
Instantaneous Forward Current---IF(mA)
10
10000
1000
Tj=150℃
100
Tj=25℃
10
Pulse width=300μs,
1% Duty cycle
100
Tj=25℃, f=1.0MHz
Per Leg
10
1
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1.4
Forward Voltage---VF(V)
1
10
Reverse Voltage---VR(V)
Reverse Leakage Current vs Reverse Voltage
Reverse Leakage Current---I R(μA)
100
Tj=125℃
Per leg
10
Tj=75℃
1
0.1
Tj=25℃
0.01
0.001
0
MBR10200FP
20
40
60
80
Percent of Rated Peak Reverse Voltage---(%)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 4/4
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak
temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MBR10200FP
CYStek Product Specification
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 5/5
CYStech Electronics Corp.
TO-220FP Dimension(K Forming)
Marking:
Device
Name
1
2
3
Date Code
A K A
Style: Pin 1.Anode 2.Cathode 3.Anode
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
*: Typical
Inches
Min.
Max.
0.3740 0.4134
*0.2756
0.6063 0.6299
0.2480 0.2717
0.0984 0.1181
0.0138 0.0295
0.0276 0.0354
0.0394 0.0551
0.1693 0.1850
DIM
A
A1
B
b1
b2
C
D
D1
E1
Millimeters
Min.
Max.
9.50
10.50
*7.00
15.40
16.00
6.30
6.90
2.50
3.00
0.35
0.75
0.70
0.90
1.00
1.40
4.30
4.70
DIM
E2
N1
N2
P
L
L1
I
T
Inches
Min.
Max.
0.0984 0.1063
0.0961 0.1039
0.1921 0.2079
0.0984 0.1142
0.5276 0.5354
0.1378 0.1772
0.1181 0.1339
0.0059 0.0138
Millimeters
Min.
Max.
2.50
2.70
2.44
2.64
4.88
5.28
2.50
2.90
13.40
13.60
3.50
4.50
3.00
3.40
0.15
0.35
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
MBR10200FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 6/6
TO-220FP (C Forming) Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
10200
□□
Style: Pin 1.Anode 2.Cathode 3.Anode
*Typical
Inches
Min.
Max.
0.169
0.185
0.051 REF
0.110
0.126
0.098
0.114
0.020
0.030
0.043
0.053
0.059
0.069
0.020
0.030
0.392
0.408
DIM
A
A1
A2
A3
b
b1
b2
c
D
Millimeters
Min.
Max.
4.300
4.700
1.300 REF
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.500
1.750
0.500
0.750
9.960
10.360
DIM
E
e
F
Φ
h
L
L1
L2
Inches
Min.
Max.
0.583
0.598
0.100*
0.106 REF
0.138 REF
0.000
0.012
1.102
1.118
0.067
0.075
0.075
0.083
Millimeters
Min.
Max.
14.800
15.200
2.540*
2.700 REF
3.500 REF
0.000
0.300
28.000
28.400
1.700
1.900
1.900
2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
MBR10200FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C462FP
Issued Date : 2009.07.14
Revised Date : 2014.04.08
Page No. : 7/7
TO-220FP (S Forming) Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Anode 2.Cathode 3.Anode
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MBR10200FP
CYStek Product Specification
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