STMicroelectronics M95040-WDW6/S 4 kbit, 2 kbit and 1 kbit serial spi bus eeprom with high speed clock Datasheet

M95040
M95020 M95010
4 Kbit, 2 Kbit and 1 Kbit Serial SPI bus EEPROM
with high speed Clock
Feature summary
■
Compatible with SPI bus serial interface
(Positive Clock SPI Modes)
■
Single supply voltage:
– 4.5 V to 5.5 V for M950x0
– 2.5 V to 5.5 V for M950x0-W
– 1.8 V to 5.5 V for M950x0-R
■
High Speed
– 10 MHz Clock rate, 5 ms Write time
■
Status Register
■
Byte and Page Write (up to 16 bytes)
■
Self-timed programming cycle
■
Adjustable size read-only EEPROM area
■
Enhanced ESD Protection
■
More than 1 Million Write cycles
■
More than 40-year data retention
■
Packages
– ECOPACK® (RoHS compliant)
Table 1.
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
UFDFPN8 (MB)
2 × 3mm
Product list
Reference
Part Number
M95040
M95040
M95040-W
M95040-R
M95020
M95020
M95020-W
M95020-R
M95010
M95010
M95010-W
M95010-R
November 2006
Rev 7
1/42
www.st.com
1
Contents
M95040, M95020, M95010
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1
Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2
Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.5
Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.6
Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.7
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8
Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8.1
3
2.8.3
Internal device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8.4
Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Connecting to the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1
4
2.8.2
Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
Hold Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
Data Protection and Protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/42
6.1
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.3
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.1
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.2
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.3
BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
M95040, M95020, M95010
7
Contents
6.4
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.5
Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.6
Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.7
Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Power-up and delivery states . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7.1
Power-up state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7.2
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
9
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
10
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
11
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3/42
List of tables
M95040, M95020, M95010
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
4/42
Product list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Write-Protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Address range bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Operating conditions (M950x0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operating conditions (M950x0-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operating conditions (M950x0-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
AC test measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics (M950x0, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics (M950x0, Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics (M950x0-W, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC characteristics (M950x0-W, Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC characteristics (M950x0-R). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
AC characteristics (M950x0, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
AC characteristics (M950x0, Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
AC characteristics (M950x0-W, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
AC characteristics (M950x0-W, Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AC characteristics (M950x0-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
TSSOP8 – 8 lead Thin Shrink Small Outline, package mechanical data . . . . . . . . . . . . . . 37
UFDFPN8 (MLP8) - 8-lead Ultra thin Fine pitch Dual Flat Package No lead
2 × 3mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
M95040, M95020, M95010
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8-pin package connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Hold Condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write Status Register (WRSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
AC test measurement I/O waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package outline . . . . . . . . . . . 36
TSSOP8 – 8 lead Thin Shrink Small Outline, package outline . . . . . . . . . . . . . . . . . . . . . . 37
UFDFPN8 (MLP8) - 8-lead Ultra thin Fine pitch Dual Flat Package No lead
2 × 3mm, package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5/42
Summary description
1
M95040, M95020, M95010
Summary description
The M95040 is a 4 Kbit (512 x 8) electrically erasable programmable memory (EEPROM),
accessed by a high speed SPI-compatible bus. The other members of the family (M95020
and M95010) are identical, though proportionally smaller (2 and 1 Kbit, respectively).
Each device is accessed by a simple serial interface that is SPI-compatible. The bus signals
are C, D and Q, as shown in Table 2 and Figure 1.
The device is selected when Chip Select (S) is taken Low. Communications with the device
can be interrupted using Hold (HOLD). WRITE instructions are disabled by Write Protect
(W).
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages.
ECOPACK® packages are Lead-free and RoHS compliant.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 1.
Logic diagram
VCC
D
Q
C
S
M95xxx
W
HOLD
VSS
AI01789C
Figure 2.
8-pin package connections
M95xxx
S
Q
W
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
C
D
AI01790D
1. See Section 10: Package mechanical for package dimensions, and how to identify pin-1.
6/42
M95040, M95020, M95010
Table 2.
Summary description
Signal names
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
7/42
Signal description
2
M95040, M95020, M95010
Signal description
During all operations, VCC must be held stable and within the specified valid range:
VCC(min) to VCC(max).
All of the input and output signals can be held High or Low (according to voltages of VIH,
VOH, VIL or VOL, as specified in Table 13 to Table 17). These signals are described next.
2.1
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be written. Values are latched on the rising edge of Serial Clock
(C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Write cycle is in progress, the device will be in the Standby
Power mode. Driving Chip Select (S) Low selects the device, placing it in the Active Power
mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without
deselecting the device.
During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data
Input (D) and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.
8/42
M95040, M95020, M95010
2.6
Signal description
Write Protect (W)
This input signal is used to control whether the memory is write protected. When Write
Protect (W) is held Low, writes to the memory are disabled, but other operations remain
enabled. Write Protect (W) must either be driven High or Low, but must not be left floating.
2.7
VSS ground
VSS is the reference for the VCC supply voltage.
2.8
Supply voltage (VCC)
VCC is the supply voltage.
2.8.1
Operating supply voltage VCC
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(min), VCC(max)] range must be applied (see Table 8, Table 9 and
Table 10). In order to secure a stable DC supply voltage, it is recommended to decouple the
VCC line with a suitable capacitor (usually of the order of 10nF to 100nF) close to the
VCC/VSS package pins.
This voltage must remain stable and valid until the end of the transmission of the instruction
and, for a Write instruction, until the completion of the internal write cycle (tW).
2.8.2
Power-up conditions
When the power supply is turned on, VCC rises from VSS to VCC. During this time, the Chip
Select (S) signal is not allowed to float and must follow the VCC voltage. The S line should
therefore be connected to VCC via a suitable pull-up resistor.
In addition, the Chip Select (S) input offers a built-in safety feature, as it is both edge
sensitive and level sensitive. Practically this means that after power-up, the device cannot
become selected until a falling edge has first been detected on Chip Select (S). So the Chip
Select (S) signal must first have been High, and then gone Low before the first operation can
be started.
2.8.3
Internal device reset
In order to prevent inadvertent Write operations during Power-up, a Power On Reset (POR)
circuit is included. At Power-up (continuous rise of VCC), the device will not respond to any
instruction until VCC has reached the Power On Reset threshold voltage (this threshold is
lower than the minimum VCC operating voltage defined in Section 9: DC and AC
parameters).
9/42
Signal description
M95040, M95020, M95010
When VCC has passed the POR threshold voltage, the device is reset and in the following
state:
2.8.4
●
in Standby Power mode
●
deselected (at next Power-up, a falling edge is required on Chip Select (S) before any
instruction can be executed)
●
not in the Hold Condition Status register state:
–
the Write Enable Latch (WEL) is reset to 0
–
the Write In Progress (WIP) is reset to 0. The SRWD, BP1 and BP0 bits of the
Status Register are at the same logic level as when the device was last powered
down (they are non-volatile bits)
Power-down
At Power-down (continuous decrease of VCC), as soon as VCC drops from the normal
operating voltage to below the Power On Reset threshold voltage, the device stops
responding to any instruction sent to it.
At Power-down, the device must be deselected and in Standby Power mode (that is there
should be no internal Write cycle in progress). Chip Select (S) should be allowed to follow
the voltage applied on VCC.
10/42
M95040, M95020, M95010
3
Connecting to the SPI bus
Connecting to the SPI bus
These devices are fully compatible with the SPI protocol.
All instructions, addresses and input data bytes are shifted in to the device, most significant
bit first. The Serial Data Input (D) is sampled on the first rising edge of the Serial Clock (C)
after Chip Select (S) goes Low.
All output data bytes are shifted out of the device, most significant bit first. The Serial Data
Output (Q) is latched on the first falling edge of the Serial Clock (C) after the instruction
(such as the Read from Memory Array and Read Status Register instructions) have been
clocked into the device.
Figure 3 shows three devices, connected to an MCU, on a SPI bus. Only one device is
selected at a time, so only one device drives the Serial Data Output (Q) line at a time, all the
others being high impedance.
Figure 3.
Bus master and memory devices on the SPI bus
VSS
VCC
R(2)
SDO
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
VCC
C Q D
Bus Master
VSS
SPI Memory
Device
R(2)
CS3
VCC
C Q D
VCC
C Q D
VSS
SPI Memory
Device
R(2)
VSS
SPI Memory
Device
R(2)
CS2 CS1
S
W
HOLD
S
W
HOLD
S
W
HOLD
AI12304
1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.
2. These pull-up resistors, R, ensure that the M950x0 are not selected if the Bus Master leaves the S line in the highimpedance state. As the Bus Master may enter a state where all inputs/outputs are in high impedance at the same time
(that is when the Bus Master is reset), the clock line (C) must be connected to an external pull-down resistor so that, when
all inputs/outputs become high impedance, S is pulled High while C is pulled Low (thus ensuring that S and C do not
become High at the same time, and so, that the tSHCH requirement is met).
11/42
Connecting to the SPI bus
3.1
M95040, M95020, M95010
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
●
CPOL=0, CPHA=0
●
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 4, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
●
C remains at 0 for (CPOL=0, CPHA=0)
●
C remains at 1 for (CPOL=1, CPHA=1)
Figure 4.
SPI modes supported
CPOL CPHA
0
0
C
1
1
C
D
Q
MSB
MSB
AI01438B
12/42
M95040, M95020, M95010
4
Operating features
4.1
Hold Condition
Operating features
The Hold (HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence.
During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data
Input (D) and Serial Clock (C) are Don’t Care.
To enter the Hold condition, the device must be selected, with Chip Select (S) Low.
Normally, the device is kept selected, for the whole duration of the Hold condition.
Deselecting the device while it is in the Hold condition, has the effect of resetting the state of
the device, and this mechanism can be used if it is required to reset any processes that had
been in progress.
The Hold condition starts when the Hold (HOLD) signal is driven Low at the same time as
Serial Clock (C) already being Low (as shown in Figure 5).
The Hold condition ends when the Hold (HOLD) signal is driven High at the same time as
Serial Clock (C) already being Low.
Figure 5 also shows what happens if the rising and falling edges are not timed to coincide
with Serial Clock (C) being Low.
Figure 5.
Hold Condition activation
C
HOLD
Hold
Condition
Hold
Condition
AI02029D
4.2
Status Register
Figure 6 shows the position of the Status Register in the control logic of the device. This
register contains a number of control bits and status bits, as shown in Table 5. For a detailed
description of the Status Register bits, see Section 6.3: Read Status Register (RDSR).
13/42
Operating features
4.3
M95040, M95020, M95010
Data Protection and Protocol control
To help protect the device from data corruption in noisy or poorly controlled environments, a
number of safety features have been built in to the device. The main security measures can
be summarized as follows:
●
The WEL bit is reset at power-up.
●
Chip Select (S) must rise after the eighth clock count (or multiple thereof) in order to
start a non-volatile Write cycle (in the memory array or in the Status Register).
●
Accesses to the memory array are ignored during the non-volatile programming cycle,
and the programming cycle continues unaffected.
●
Invalid Chip Select (S) and Hold (HOLD) transitions are ignored.
For any instruction to be accepted and executed, Chip Select (S) must be driven High after
the rising edge of Serial Clock (C) that latches the last bit of the instruction, and before the
next rising edge of Serial Clock (C).
For this, “the last bit of the instruction” can be the eighth bit of the instruction code, or the
eighth bit of a data byte, depending on the instruction (except in the case of RDSR and
READ instructions). Moreover, the "next rising edge of CLOCK" might (or might not) be the
next bus transaction for some other device on the bus.
When a Write cycle is in progress, the device protects it against external interruption by
ignoring any subsequent READ, WRITE or WRSR instruction until the present cycle is
complete.
Table 3.
Write-Protected block size
Status Register Bits
Array Addresses Protected
Protected Block
14/42
BP1
BP0
M95040
M95020
M95010
0
0
none
none
none
none
0
1
Upper quarter
180h - 1FFh
C0h - FFh
60h - 7Fh
1
0
Upper half
100h - 1FFh
80h - FFh
40h - 7Fh
1
1
Whole memory
000h - 1FFh
00h - FFh
00h - 7Fh
M95040, M95020, M95010
Memory organization
The memory is organized as shown in Figure 6.
Figure 6.
Block diagram
HOLD
W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Data
Register
Status
Register
Size of the
Read only
EEPROM
area
Y Decoder
5
Memory organization
1 Page
X Decoder
AI01272C
15/42
Instructions
6
M95040, M95020, M95010
Instructions
Each instruction starts with a single-byte code, as summarized in Table 4.
If an invalid instruction is sent (one not contained in Table 4), the device automatically
deselects itself.
Table 4.
Instruction set
Instruction
Description
Instruction Format
WREN
Write Enable
0000 X110(1)
WRDI
Write Disable
0000 X100(1)
RDSR
Read Status Register
0000 X101(1)
WRSR
Write Status Register
0000 X001(1)
READ
Read from Memory Array
0000 A8011(2)
WRITE
Write to Memory Array
0000 A8010(2)
1. X = Don’t Care.
2. A8 = 1 for the upper half of the memory array of the M95040, and 0 for the lower half, and is Don’t Care for
other devices.
6.1
Write Enable (WREN)
The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction.
The only way to do this is to send a Write Enable instruction to the device.
As shown in Figure 7, to send this instruction to the device, Chip Select (S) is driven Low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then
enters a wait state. It waits for a the device to be deselected, by Chip Select (S) being driven
High.
Figure 7.
Write Enable (WREN) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI01441D
16/42
M95040, M95020, M95010
6.2
Instructions
Write Disable (WRDI)
One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction
to the device.
As shown in Figure 8, to send this instruction to the device, Chip Select (S) is driven Low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D).
The device then enters a wait state. It waits for a the device to be deselected, by Chip Select
(S) being driven High.
The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events:
●
Power-up
●
WRDI instruction execution
●
WRSR instruction completion
●
WRITE instruction completion
●
Write Protect (W) line being held Low.
Figure 8.
Write Disable (WRDI) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03790D
17/42
Instructions
6.3
M95040, M95020, M95010
Read Status Register (RDSR)
One of the major uses of this instruction is to allow the MCU to poll the state of the Write In
Progress (WIP) bit. This is needed because the device will not accept further WRITE or
WRSR instructions when the previous Write cycle is not yet finished.
As shown in Figure 9, to send this instruction to the device, Chip Select (S) is first driven
Low. The bits of the instruction byte are then shifted in, on Serial Data Input (D). The current
state of the bits in the Status Register is shifted out, on Serial Data Out (Q). The Read Cycle
is terminated by driving Chip Select (S) High.
The Status Register may be read at any time, even during a Write cycle (whether it be to the
memory area or to the Status Register). All bits of the Status Register remain valid, and can
be read using the RDSR instruction. However, during the current Write cycle, the values of
the non-volatile bits (BP0, BP1) become frozen at a constant value. The updated value of
these bits becomes available when a new RDSR instruction is executed, after completion of
the Write cycle. On the other hand, the two read-only bits (Write Enable Latch (WEL), Write
In Progress (WIP)) are dynamically updated during the on-going Write cycle.
Bits b7, b6, b5 and b4 are always read as 1. The status and control bits of the Status
Register are as follows:
6.3.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write
Status Register cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
6.3.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable
Latch is reset and no Write or Write Status Register instruction is accepted.
6.3.3
BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against Write instructions. These bits are written with the Write Status
Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table 3) becomes protected against Write
(WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set.
Table 5.
Status Register format
b7
1
b0
1
1
1
BP1
BP0
WEL
WIP
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
18/42
M95040, M95020, M95010
Figure 9.
Instructions
Read Status Register (RDSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI01444D
19/42
Instructions
6.4
M95040, M95020, M95010
Write Status Register (WRSR)
This instruction has no effect on bits b7, b6, b5, b4, b1 and b0 of the Status Register.
As shown in Figure 10, to send this instruction to the device, Chip Select (S) is first driven
Low. The bits of the instruction byte and data byte are then shifted in on Serial Data Input
(D).
The instruction is terminated by driving Chip Select (S) High. Chip Select (S) must be driven
High after the rising edge of Serial Clock (C) that latches the eighth bit of the data byte, and
before the next rising edge of Serial Clock (C). If this condition is not met, the Write Status
Register (WRSR) instruction is not executed. The self-timed Write Cycle starts, and
continues for a period tW (as specified in Table 18 to Table 22), at the end of which the Write
in Progress (WIP) bit is reset to 0.
The instruction is not accepted, and is not executed, under the following conditions:
●
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before)
●
if a Write Cycle is already in progress
●
if the device has not been deselected, by Chip Select (S) being driven High, after the
eighth bit, b0, of the data byte has been latched in
●
if Write Protect (W) is Low.
Figure 10. Write Status Register (WRSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI01445B
20/42
M95040, M95020, M95010
6.5
Instructions
Read from Memory Array (READ)
As shown in Figure 11, to send this instruction to the device, Chip Select (S) is first driven
Low. The bits of the instruction byte and address byte are then shifted in, on Serial Data
Input (D). For the M95040, the most significant address bit, A8, is incorporated as bit b3 of
the instruction byte, as shown in Table 4. The address is loaded into an internal address
register, and the byte of data at that address is shifted out, on Serial Data Output (Q).
If Chip Select (S) continues to be driven Low, an internal bit-pointer is automatically
incremented at each clock cycle, and the corresponding data bit is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a
single READ instruction.
The Read cycle is terminated by driving Chip Select (S) High. The rising edge of the Chip
Select (S) signal can occur at any time during the cycle.
The first byte addressed can be any byte within any page.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Table 6.
Address range bits
Device
Address Bits
M95040
M95020
M95010
A8-A0
A7-A0
A6-A0
Figure 11. Read from Memory Array (READ) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
C
Instruction
D
A8
Byte Address
A7 A6 A5 A4 A3 A2 A1 A0
Data Out
High Impedance
Q
7
6
5
4
3
2
1
0
AI01440E
1. Depending on the memory size, as shown in Table 6, the most significant address bits are Don’t Care.
21/42
Instructions
6.6
M95040, M95020, M95010
Write to Memory Array (WRITE)
As shown in Figure 12, to send this instruction to the device, Chip Select (S) is first driven
Low. The bits of the instruction byte, address byte, and at least one data byte are then
shifted in, on Serial Data Input (D).
The instruction is terminated by driving Chip Select (S) High after the rising edge of Serial
Clock (C) that latches the last data bit, and before the next rising edge of Serial Clock (C)
occurs anywhere on the bus. In the case of Figure 12, this occurs after the eighth bit of the
data byte has been latched in, indicating that the instruction is being used to write a single
byte. The self-timed Write cycle starts, and continues for a period tWC (as specified in
Table 18 to Table 22), at the end of which the Write in Progress (WIP) bit is reset to 0.
If, though, Chip Select (S) continues to be driven Low, as shown in Figure 13, the next byte
of input data is shifted in. In this way, all the bytes from the given address to the end of the
same page can be programmed in a single instruction.
If Chip Select (S) still continues to be driven Low, the next byte of input data is shifted in, and
is used to overwrite the byte at the start of the current page.
The instruction is not accepted, and is not executed, under the following conditions:
●
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before)
●
if a Write cycle is already in progress
●
if the device has not been deselected, by Chip Select (S) being driven High, at a byte
boundary (after the rising edge of Serial Clock (C) that latches the last data bit, and
before the next rising edge of Serial Clock (C) occurs anywhere on the bus)
●
if Write Protect (W) is Low or if the addressed page is in the region protected by the
Block Protect (BP1 and BP0) bits.
Figure 12. Byte Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
C
Instruction
D
A8
Byte Address
A7 A6 A5 A4 A3 A2 A1 A0 7
Data Byte
6
5
4
3
2
1
0
High Impedance
Q
AI01442D
1. Depending on the memory size, as shown in Table 6, the most significant address bits are Don’t Care.
22/42
M95040, M95020, M95010
Instructions
Figure 13. Page Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
C
Instruction
Byte Address
A8
D
Data Byte 1
A7 A6 A5 A4 A3 A2 A1 A0 7
6
5
4
3
2
1
0
7
143
142
141
140
139
138
137
136
15+8N
14+8N
13+8N
12+8N
11+8N
10+8N
9+8N
24 25 26 27 28 29 30 31
8+8N
S
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte N
1
0
7
6
5
4
3
2
Data Byte 16
1
0
7
6
5
4
3
2
1
0
AI01443D
1. Depending on the memory size, as shown in Table 6, the most significant address bits are Don’t Care.
6.7
Cycling
23/42
Power-up and delivery states
7
Power-up and delivery states
7.1
Power-up state
M95040, M95020, M95010
After Power-up, the device is in the following state:
●
low power Standby Power mode
●
deselected (after Power-up, a falling edge is required on Chip Select (S) before any
instructions can be started).
●
not in the Hold Condition
●
the Write Enable Latch (WEL) is reset to 0
●
Write In Progress (WIP) is reset to 0
The BP1 and BP0 bits of the Status Register are unchanged from the previous power-down
(they are non-volatile bits).
7.2
Initial delivery state
The device is delivered with the memory array set at all 1s (FFh). The Block Protect (BP1
and BP0) bits are initialized to 0.
24/42
M95040, M95020, M95010
8
Maximum rating
Maximum rating
Stressing the device outside the ratings listed in Table 7 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the Operating sections of this specification, is not
implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect
device reliability. Refer also to the STMicroelectronics SURE Program and other relevant
quality documents.
Table 7.
Absolute maximum ratings
Symbol
TA
TSTG
TLEAD
Parameter
Min.
Max.
Unit
Ambient Operating Temperature
–40
130
°C
Storage Temperature
–65
150
°C
(1)
°C
Lead Temperature during Soldering
see note
VO
Output Voltage
–0.50
VCC+0.6
V
VI
Input Voltage
–0.50
6.5
V
–0.50
6.5
V
–4000
4000
V
VCC
VESD
Supply Voltage
Electrostatic Discharge Voltage (Human Body
model)(2)
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1=100pF, R1=1500Ω, R2=500Ω)
25/42
DC and AC parameters
9
M95040, M95020, M95010
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 8.
Operating conditions (M950x0)
Symbol
VCC
TA
Table 9.
Parameter
Min.
Max.
Unit
Supply Voltage
4.5
5.5
V
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
°C
Min.
Max.
Unit
Supply Voltage
2.5
5.5
V
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
°C
Operating conditions (M950x0-W)
Symbol
VCC
TA
Table 10.
Parameter
Operating conditions (M950x0-R)
Symbol
VCC
TA
Table 11.
Symbol
CL
Parameter
Min.
Max.
Unit
Supply Voltage
1.8
5.5
V
Ambient Operating Temperature
–40
85
°C
Min.
Max.
Unit
AC test measurement conditions
Parameter
Load Capacitance
30
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input and Output Timing Reference Voltages
0.3VCC to 0.7VCC
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 14. AC test measurement I/O waveform
Input Levels
0.8VCC
0.2VCC
Input and Output
Timing Reference Levels
0.7VCC
0.3VCC
AI00825B
26/42
pF
M95040, M95020, M95010
Table 12.
Symbol
COUT
CIN
DC and AC parameters
Capacitance
Parameter
Test Condition
Max.
Unit
VOUT = 0V
8
pF
Input Capacitance (D)
VIN = 0V
8
pF
Input Capacitance (other pins)
VIN = 0V
6
pF
Max.
Unit
VIN = VSS or VCC
±2
µA
Output Capacitance (Q)
Min.
1. Sampled only, not 100% tested, at TA=25°C and a frequency of 5MHz.
Table 13.
Symbol
DC characteristics (M950x0, Device Grade 6)
Parameter
Test Condition
Min.
ILI
Input Leakage Current
ILO
Output Leakage
Current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply Current
C = 0.1VCC/0.9VCC at 10 MHz,
VCC = 5 V, Q = open
5
mA
ICC1
Supply Current
(Standby Power mode)
S = VCC, VCC = 5 V,
VIN = VSS or VCC
2
µA
VIL
Input Low Voltage
–0.45
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 2 mA, VCC = 5 V
0.4
V
VOH
Output High Voltage
IOH = –2 mA, VCC = 5 V
Table 14.
Symbol
0.8 VCC
V
DC characteristics (M950x0, Device Grade 3)
Parameter
Test Condition
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
ILI
Input Leakage
Current
ILO
Output Leakage
Current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply Current
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 5 V, Q = open
3
mA
ICC1
Supply Current
(Standby Power
mode)
S = VCC, VIN = VSS or VCC
VCC = 5 V
5
µA
VIL
Input Low Voltage
–0.45
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 2 mA, VCC = 5 V
0.4
V
VOH
Output High Voltage
IOH = –2 mA, VCC = 5 V
0.8 VCC
V
27/42
DC and AC parameters
Table 15.
Symbol
DC characteristics (M950x0-W, Device Grade 6)
Parameter
Test Condition
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
S = VCC, VOUT = VSS or VCC
±2
µA
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 2.5 V, Q = open
2
mA
S = VCC, VIN = VSS or VCC
VCC = 2.5 V
1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current
(Standby Power mode)
VIL
Input Low Voltage
–0.45
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 1.5 mA, VCC = 2.5 V
0.4
V
VOH
Output High Voltage
IOH = –0.4 mA, VCC = 2.5 V
Table 16.
Symbol
0.8 VCC
V
DC characteristics (M950x0-W, Device Grade 3)
Parameter
Test Condition
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
ILI
Input Leakage Current
ILO
Output Leakage
Current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply Current
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 2.5 V, Q = open
2
mA
ICC1
Supply Current
(Standby Power mode)
S = VCC, VIN = VSS or VCC
VCC = 2.5 V
2
µA
VIL
Input Low Voltage
–0.45
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 1.5 mA, VCC = 2.5 V
0.4
V
VOH
Output High Voltage
IOH = –0.4 mA, VCC = 2.5 V
Table 17.
Symbol
28/42
M95040, M95020, M95010
0.8 VCC
V
DC characteristics (M950x0-R)
Parameter
Test Condition
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
ILI
Input Leakage Current
ILO
Output Leakage
Current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply Current
C = 0.1 VCC/0.9. VCC at 2 MHz,
VCC = 1.8 V, Q = open
2
mA
ICC1
Supply Current
(Standby Power mode)
S = VCC, VIN = VSS or VCC,
VCC = 1.8 V
1
µA
VIL
Input Low Voltage
–0.45
0.3VCC
V
VIH
Input High Voltage
0.7 VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 0.15 mA, VCC = 1.8 V
0.3
V
VOH
Output High Voltage
IOH = –0.1 mA, VCC = 1.8 V
0.8 VCC
V
M95040, M95020, M95010
Table 18.
DC and AC parameters
AC characteristics (M950x0, Device Grade 6)
Test conditions specified in Table 11 and Table 8
Symbol
Alt.
fC
fSCK
Clock Frequency
tSLCH
tCSS1
S Active Setup Time
15
ns
tSHCH
tCSS2
S Not Active Setup Time
15
ns
tSHSL
tCS
S Deselect Time
40
ns
tCHSH
tCSH
S Active Hold Time
25
ns
S Not Active Hold Time
15
ns
tCHSL
Parameter
Min.
Max.
Unit
D.C.
10
MHz
tCH(1)
tCLH
Clock High Time
40
ns
(1)
40
ns
tCLL
Clock Low Time
tCLCH(2)
tRC
Clock Rise Time
1
µs
tCHCL(2)
tFC
Clock Fall Time
1
µs
tDVCH
tDSU
Data In Setup Time
15
ns
tCHDX
tDH
Data In Hold Time
15
ns
tHHCH
Clock Low Hold Time after HOLD not Active
15
ns
tHLCH
Clock Low Hold Time after HOLD Active
20
ns
tCLHL
Clock Low Setup Time before HOLD Active
0
ns
tCLHH
Clock Low Setup Time before HOLD not Active
0
ns
tCL
tSHQZ
(2)
tDIS
tCLQV
tV
tCLQX
Output Disable Time
25
ns
Clock Low to Output Valid
35
ns
tHO
Output Hold Time
tQLQH
(2)
0
ns
tRO
Output Rise Time
20
ns
tQHQL
(2)
tFO
Output Fall Time
20
ns
tHHQV
tLZ
HOLD High to Output Valid
25
ns
tHLQZ(2)
tHZ
HOLD Low to Output High-Z
35
ns
tW
tWC
Write Time
5
ms
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
29/42
DC and AC parameters
Table 19.
M95040, M95020, M95010
AC characteristics (M950x0, Device Grade 3)
Test conditions specified in Table 11 and Table 8
Symbol
Alt.
fC
fSCK
Clock Frequency
tSLCH
tCSS1
S Active Setup Time
90
ns
tSHCH
tCSS2
S Not Active Setup Time
90
ns
tSHSL
tCS
S Deselect Time
100
ns
tCHSH
tCSH
S Active Hold Time
90
ns
S Not Active Hold Time
90
ns
tCHSL
Parameter
Max.
Unit
D.C.
5
MHz
tCH(1)
tCLH
Clock High Time
90
ns
tCL(1)
90
ns
tCLL
Clock Low Time
tCLCH
(2)
tRC
Clock Rise Time
1
µs
tCHCL
(2)
tFC
Clock Fall Time
1
µs
tDVCH
tDSU
Data In Setup Time
20
ns
tCHDX
tDH
Data In Hold Time
30
ns
tHHCH
Clock Low Hold Time after HOLD not Active
70
ns
tHLCH
Clock Low Hold Time after HOLD Active
40
ns
tCLHL
Clock Low Setup Time before HOLD Active
0
ns
tCLHH
Clock Low Setup Time before HOLD not Active
0
ns
tSHQZ
(2)
tDIS
tCLQV
tV
tCLQX
Output Disable Time
100
ns
Clock Low to Output Valid
60
ns
tHO
Output Hold Time
tQLQH
(2)
tRO
Output Rise Time
50
ns
tQHQL
(2)
tFO
Output Fall Time
50
ns
tHHQV
tLZ
HOLD High to Output Valid
50
ns
tHLQZ(2)
tHZ
HOLD Low to Output High-Z
100
ns
tW
tWC
Write Time
5
ms
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
30/42
Min.
0
ns
M95040, M95020, M95010
Table 20.
DC and AC parameters
AC characteristics (M950x0-W, Device Grade 6)
Test conditions specified in Table 11 and Table 9
Symbol
Alt.
fC
fSCK
Clock Frequency
tSLCH
tCSS1
S Active Setup Time
90
ns
tSHCH
tCSS2
S Not Active Setup Time
90
ns
tSHSL
tCS
S Deselect Time
100
ns
tCHSH
tCSH
S Active Hold Time
90
ns
S Not Active Hold Time
90
ns
tCHSL
Parameter
Min.
Max.
Unit
D.C.
5
MHz
tCH(1)
tCLH
Clock High Time
90
ns
tCL(1)
90
ns
tCLL
Clock Low Time
tCLCH
(2)
tRC
Clock Rise Time
1
µs
tCHCL
(2)
tFC
Clock Fall Time
1
µs
tDVCH
tDSU
Data In Setup Time
20
ns
tCHDX
tDH
Data In Hold Time
30
ns
tHHCH
Clock Low Hold Time after HOLD not Active
70
ns
tHLCH
Clock Low Hold Time after HOLD Active
40
ns
tCLHL
Clock Low Setup Time before HOLD Active
0
ns
tCLHH
Clock Low Setup Time before HOLD not Active
0
ns
tSHQZ(2)
tDIS
tCLQV
tV
tCLQX
tHO
Output Hold Time
tQLQH(2)
tRO
Output Rise Time
50
ns
tQHQL(2)
tFO
Output Fall Time
50
ns
tHHQV
tLZ
HOLD High to Output Valid
50
ns
tHLQZ(2)
tHZ
HOLD Low to Output High-Z
100
ns
tW
tWC
Write Time
5
ms
Output Disable Time
100
ns
Clock Low to Output Valid
60
ns
0
ns
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
31/42
DC and AC parameters
Table 21.
M95040, M95020, M95010
AC characteristics (M950x0-W, Device Grade 3)
Test conditions specified in Table 11 and Table 9
Symbol
Alt.
fC
fSCK
Clock Frequency
tSLCH
tCSS1
S Active Setup Time
90
ns
tSHCH
tCSS2
S Not Active Setup Time
90
ns
tSHSL
tCS
S Deselect Time
100
ns
tCHSH
tCSH
S Active Hold Time
90
ns
S Not Active Hold Time
90
ns
tCHSL
Parameter
Max.
Unit
D.C.
5
MHz
tCH(1)
tCLH
Clock High Time
90
ns
(1)
90
ns
tCLL
Clock Low Time
tCLCH(2)
tRC
Clock Rise Time
1
µs
tCHCL(2)
tFC
Clock Fall Time
1
µs
tDVCH
tDSU
Data In Setup Time
20
ns
tCHDX
tDH
Data In Hold Time
30
ns
tHHCH
Clock Low Hold Time after HOLD not Active
70
ns
tHLCH
Clock Low Hold Time after HOLD Active
40
ns
tCLHL
Clock Low Setup Time before HOLD Active
0
ns
tCLHH
Clock Low Set-up Time before HOLD not Active
0
ns
tCL
tSHQZ(2)
tDIS
tCLQV
tV
tCLQX
tHO
Output Hold Time
tQLQH(2)
tRO
Output Rise Time
50
ns
(2)
tFO
Output Fall Time
50
ns
tHHQV
tLZ
HOLD High to Output Valid
50
ns
tHLQZ(2)
tHZ
HOLD Low to Output High-Z
100
ns
tW
tWC
Write Time
5
ms
tQHQL
Output Disable Time
100
ns
Clock Low to Output Valid
60
ns
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
32/42
Min.
0
ns
M95040, M95020, M95010
Table 22.
DC and AC parameters
AC characteristics (M950x0-R)
Test conditions specified in Table 11 and Table 10
Symbol
Alt.
fC
fSCK
tSLCH
Min.
Max.
Unit
Clock Frequency
D.C.
2
MHz
tCSS1
S Active Setup Time
200
ns
tSHCH
tCSS2
S Not Active Setup Time
200
ns
tSHSL
tCS
S Deselect Time
200
ns
tCHSH
tCSH
S Active Hold Time
200
ns
S Not Active Hold Time
200
ns
tCHSL
Parameter
tCH(1)
tCLH
Clock High Time
200
ns
tCL(1)
200
ns
tCLL
Clock Low Time
tCLCH
(2)
tRC
Clock Rise Time
1
µs
tCHCL
(2)
tFC
Clock Fall Time
1
µs
tDVCH
tDSU
Data In Setup Time
40
ns
tCHDX
tDH
Data In Hold Time
50
ns
tHHCH
Clock Low Hold Time after HOLD not Active
140
ns
tHLCH
Clock Low Hold Time after HOLD Active
90
ns
tCLHL
Clock Low Setup Time before HOLD Active
0
ns
tCLHH
Clock Low Setup Time before HOLD not Active
0
ns
tSHQZ(2)
tDIS
tCLQV
tV
tCLQX
tHO
Output Hold Time
tQLQH(2)
tRO
Output Rise Time
100
ns
tQHQL(2)
tFO
Output Fall Time
100
ns
tHHQV
tLZ
HOLD High to Output Valid
100
ns
tHLQZ(2)
tHZ
HOLD Low to Output High-Z
250
ns
tW
tWC
Write Time
10
ms
Output Disable Time
250
ns
Clock Low to Output Valid
180
ns
0
ns
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
33/42
DC and AC parameters
M95040, M95020, M95010
Figure 15. Serial input timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
D
Q
tCLCH
High Impedance
AI01447C
Figure 16. Hold timing
S
tHLCH
tCLHL
tHHCH
C
tCLHH
tHLQZ
tHHQV
Q
D
HOLD
AI01448B
34/42
M95040, M95020, M95010
DC and AC parameters
Figure 17. Output timing
S
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
tQLQH
tQHQL
D
ADDR.LSB IN
AI01449e
35/42
Package mechanical
10
M95040, M95020, M95010
Package mechanical
Figure 18. SO8N - 8 lead Plastic Small Outline, 150 mils body width, package outline
h x 45˚
A2
A
c
ccc
b
e
0.25 mm
GAUGE PLANE
D
k
8
E1
E
1
L
A1
L1
SO-A
1. Drawing is not to scale.
Table 23.
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.75
Max
0.069
A1
0.10
A2
1.25
b
0.28
0.48
0.011
0.019
c
0.17
0.23
0.007
0.009
ccc
0.25
0.004
0.010
0.049
0.10
0.004
D
4.90
4.80
5.00
0.193
0.189
0.197
E
6.00
5.80
6.20
0.236
0.228
0.244
E1
3.90
3.80
4.00
0.154
0.150
0.157
e
1.27
–
–
0.050
–
–
h
0.25
0.50
0.010
0.020
k
0°
8°
0°
8°
L
0.40
1.27
0.016
0.050
L1
36/42
Max
1.04
0.041
M95040, M95020, M95010
Package mechanical
Figure 19. TSSOP8 – 8 lead Thin Shrink Small Outline, package outline
D
8
5
c
E1
1
E
4
α
L
A1
A
A2
L1
CP
b
e
TSSOP8AM
1. Drawing is not to scale.
Table 24.
TSSOP8 – 8 lead Thin Shrink Small Outline, package mechanical data
millimeters
inches
Symbol
Typ.
Min.
A
Max.
Min.
1.200
A1
0.050
0.150
0.800
1.050
b
0.190
c
0.090
A2
Typ.
1.000
CP
Max.
0.0472
0.0020
0.0059
0.0315
0.0413
0.300
0.0075
0.0118
0.200
0.0035
0.0079
0.0394
0.100
0.0039
D
3.000
2.900
3.100
0.1181
0.1142
0.1220
e
0.650
–
–
0.0256
–
–
E
6.400
6.200
6.600
0.2520
0.2441
0.2598
E1
4.400
4.300
4.500
0.1732
0.1693
0.1772
L
0.600
0.450
0.750
0.0236
0.0177
0.0295
L1
1.000
0°
8°
0.0394
α
0°
N (number of pins)
8
8°
8
37/42
Package mechanical
M95040, M95020, M95010
Figure 20. UFDFPN8 (MLP8) - 8-lead Ultra thin Fine pitch Dual Flat Package No lead
2 × 3mm, package outline
e
D
b
L1
L3
E
E2
L
A
D2
ddd
A1
UFDFPN-01
1. Drawing is not to scale.
Table 25.
UFDFPN8 (MLP8) - 8-lead Ultra thin Fine pitch Dual Flat Package No lead
2 × 3mm, package mechanical data
millimeters
inches
Symbol
A
Typ
Min
Max
Typ
Min
Max
0.55
0.50
0.60
0.022
0.020
0.024
0.00
0.05
0.000
0.002
0.20
0.30
0.008
0.012
0.061
0.065
A1
b
0.25
D
2.00
D2
0.079
1.55
ddd
E
1.65
0.05
3.00
E2
0.002
0.118
0.15
0.25
0.006
0.010
e
0.50
–
–
0.020
–
–
L
0.45
0.40
0.50
0.018
0.016
0.020
L1
38/42
0.010
0.15
0.006
L3
0.30
0.012
N (number of pins)
8
8
M95040, M95020, M95010
11
Part numbering
Part numbering
Table 26.
Ordering information scheme
Example:
M95040
–
W MN 6
T P /W
Device Type
M95 = SPI serial access EEPROM
Device Function
040 = 4 Kbit (512 x 8)
020 = 2 Kbit (256 x 8)
010 = 1 Kbit (128 x 8)
Operating Voltage
blank = VCC = 4.5 to 5.5V
W = VCC = 2.5 to 5.5V
R = VCC = 1.8 to 5.5V
Package
MN = SO8 (150 mil width)
DW = TSSOP8 (169 mil width)
MB = UFDFPN8 (MLP8) 2 × 3mm
Device Grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3 = Device tested with High Reliability Certified Flow(1).
Automotive temperature range (–40 to 125 °C)
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating Technology
blank = Standard SnPb plating
P or G = ECOPACK® (RoHS compliant)
Process(2)
/W, /G or /S = F6SP36%
1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment.
The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your
nearest ST sales office for a copy.
2. Used only for Device Grade 3
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST Sales Office.
The category of second-Level Interconnect is marked on the package and on the inner box
label, in compliance with JEDEC Standard JESD97. The maximum ratings related to
soldering conditions are also marked on the inner box label.
39/42
Revision history
12
M95040, M95020, M95010
Revision history
Table 27.
Document revision history
Date
Version
10-May-2000
2.2
s/issuing three bytes/issuing two bytes/ in the 2nd sentence of the Byte
Write Operation
16-Mar-2001
2.3
Human Body Model meets JEDEC std (Table 2). Minor adjustments to
Figs 7,9,10,11 & Tab 9. Wording changes, according to the standard
glossary
Illustrations and Package Mechanical data updated
19-Jul-2001
2.4
Temperature range ‘3’ added to the -W supply voltage range in DC and
AC characteristics
11-Oct-2001
3.0
Document reformatted using the new template
26-Feb-2002
3.1
Description of chip deselect after 8th clock pulse made more explicit
27-Sep-2002
3.2
Position of A8 in Read Instruction Sequence Figure corrected. Load
Capacitance CL changed
24-Oct-2002
3.3
Minimum values for tCHHL and tCHHH changed.
24-Feb-2003
3.4
Description of Read from Memory Array (READ) instruction corrected,
and clarified
28-May-2003
3.5
New products, identified by the process letter W, added
25-Jun-2003
3.6
Correction to current products, identified by the process letter K not L.
ICC changed in DC characteristics, and tCHHL, tCHHH substituted in AC
characteristics
Voltage range -S upgraded by removing it, and adding the -R voltage
range in its place
Temperature range 5 removed.
21-Nov-2003
4.0
Table of contents, and Pb-free options added. VIL(min) improved to -0.45V
02-Feb-2004
4.1
VIL(max) and tCLQV(max) changed
5.0
Absolute Maximum Ratings for VIO(min) and VCC(min) improved.
Soldering temperature information clarified for RoHS compliant devices.
New 5V and 2.5V devices, with process letter W, promoted from
preliminary data to full data. Device Grade 3 clarified, with reference to
HRCF and automotive environments
01-Mar-2004
40/42
Changes
M95040, M95020, M95010
Table 27.
Revision history
Document revision history (continued)
Date
05-Oct-2004
06-Nov-2006
Version
Changes
6.0
Product List summary table added. Process identification letter “G”
information added. Order information for Tape and Reel changed to T.
AEC-Q100-002 compliance. Device Grade information clarified. tHHQX
corrected to tHHQV. Signal Description updated.
10MHz, 5ms Write is now the present product. tCH+tCL<1/fC constraint
clarified
7
Document converted to new template, Table 5: Status Register format
moved to below Section 6.3: Read Status Register (RDSR).
PDIP package removed. UFDFPN8 (MB) package added (see Figure 20
and Table 25) and SO8N package specifications updated (see Figure 18
and Table 23). Packages are ECOPACK® compliant.
Section 6.7: Cycling added. Section 2.8: Supply voltage (VCC) added and
information removed below Section 4: Operating features.
Figure 3: Bus master and memory devices on the SPI bus modified.
TLEAD parameter modified, Note 1 changed, and TA added to Table 7:
Absolute maximum ratings.
Characteristics of previous product identified by process letter K removed.
CL modified in Table 11: AC test measurement conditions. Note removed
below Table 13 and Table 14.
Information in Table 17 is no longer Preliminary data, ICC, ICC1 and VIL
modified. End timing line of tSHQZ moved in Figure 17.
tCHHL and tCHHH changed to tCLHL and tCLHH, respectively in Figure 16,
Table 18, Table 19, Table 20, Table 21 and Table 22.
Plating Technology and Process updated in Table 26: Ordering
information scheme.
41/42
M95040, M95020, M95010
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42/42