DMN3020UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V Features and Benefits RDS(ON) max ID max TC = +25°C 20mΩ @ VGS = 4.5V 15A 25mΩ @ VGS = 2.5V 14A Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.039 grams (Approximate) D TSSOP-8 D D D D S S S G ESD PROTECTED Pin1 Bottom View Top View G Gate Protection Diode Pin Out S Equivalent Circuit Ordering Information (Note 4) Part Number DMN3020UTS-13 Notes: Case TSSOP-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 8 5 N3020U = Manufacturer’s Marking N3020U = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) YY WW 1 DMN3020UTS Document number: DS39580 Rev. 2 - 2 4 1 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN3020UTS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 4.5V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +70°C Steady State Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 7) Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH ID Value 30 ±12 6.8 5.4 ID 15 12 Unit V V A A IDM A IS A ISM IAS EAS A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 0.85 150 1.4 90 17 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) 0.4 RDS(ON) — VSD — 1.0 20 25 50 1.2 V Static Drain-Source On-Resistance — 15 18 25 0.8 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A VGS = 1.8V, ID = 2.0A VGS = 0V, IS = 1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — — — 1304 87 80 1.3 15 27 2.0 2.1 4.1 4.8 20.5 3.2 7.1 1.7 — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 4.5A ns VDS = 15V, VGS = 4.5V, RG = 1Ω, ID = 4.5A ns nC IF = 1.0A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3020UTS Document number: DS39580 Rev. 2 - 2 2 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN3020UTS 30.0 30 VGS = 2.0V 25 VGS = 2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VDS = 5.0V VGS = 1.8V 20.0 VGS = 3.0V VGS = 4.5V 15.0 VGS = 6.0V 10.0 VGS = 10V VGS = 1.5V 5.0 20 15 10 5 TJ = 150oC TJ = 85oC 125oC TJ = 25oC TJ = VGS = 1.2V 0.0 TJ = -55oC 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3 0 Figure 1. Typical Output Characteristic VGS = 1.5V 50.00 40.00 30.00 VGS = 1.8V VGS = 2.5V 20.00 VGS = 4.5V 10.00 0.00 ID = 4.5A 45 ID = 2.5A 40 ID = 1.8A ID = 1.5A 35 30 25 20 15 10 0 5 10 15 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.04 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 12 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 3 50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 60.00 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VGS = 10V 0.03 TJ = 150oC TJ = 125oC 0.02 TJ = 85oC TJ = 25oC 0.01 TJ = -55oC VGS = 4.5V, ID = 4.5A 1.8 VGS = 2.5V, ID = 3.5A 1.6 1.4 1.2 1 VGS = 1.8V, ID = 2.0A 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3020UTS Document number: DS39580 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature July 2017 © Diodes Incorporated 0.04 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN3020UTS VGS = 1.8V, ID = 1.0A 0.03 0.02 VGS = 2.5V, ID = 3.5A 0.01 VGS = 4.5V, ID = 4.5A 0 0.9 ID = 1mA 0.6 ID = 250µA 0.3 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 -50 Figure 7. On-Resistance Variation with Temperature 30 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. JunctionTemperature 10000 VGS = 0V CT, JUNCTION CAPACITANCE (pF) f = 1MHz 25 IS, SOURCE CURRENT (A) 150 20 15 TJ = 150oC TJ = 125oC 10 TJ = 85oC 5 TJ = 25oC Ciss 1000 Coss 100 Crss TJ = -55oC 0 10 0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 8 100 RDS(ON) Limited 4 VDS = 15V, ID = 4.5A 2 0 4 8 12 16 20 Qg (nC) Figure 11. Gate Charge DMN3020UTS Document number: DS39580 Rev. 2 - 2 24 PW = 100µs DC 1 PW = 10s 0.1 0.01 0 PW = 1ms 10 ID, DRAIN CURRENT (A) 6 VGS (V) 30 28 4 of 7 www.diodes.com TJ(Max) = 150℃ TC = 25℃ Single Pulse PW = 1s DUT on 1*MRP P = 100ms W Board PW = 10ms VGS = 10V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 July 2017 © Diodes Incorporated DMN3020UTS 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 149℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN3020UTS Document number: DS39580 Rev. 2 - 2 5 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN3020UTS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSSOP-8 D See Detail C E E1 e c b Gauge plane a A2 A L D A1 Detail C TSSOP-8 Dim Min Max Typ a 0.09 A 1.20 A1 0.05 0.15 A2 0.825 1.025 0.925 b 0.19 0.30 c 0.09 0.20 D 2.90 3.10 3.025 e 0.65 E 6.40 E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSSOP-8 Y Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 X C3 C1 C2 DMN3020UTS Document number: DS39580 Rev. 2 - 2 G 6 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN3020UTS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN3020UTS Document number: DS39580 Rev. 2 - 2 7 of 7 www.diodes.com July 2017 © Diodes Incorporated