Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ Features General Description The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1501 is suitable device for DC to DC converter and general purpose applications. VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC TC=70oC Continuous Drain Current (1) o TA=25 C 67.4 ID TA=70oC Pulsed Drain Current IDM TC=25 C Power Dissipation o TA=25 C Single Pulse Avalanche Energy Junction and Storage Temperature Range 100 A 44.6 PD TA=70oC (2) A 25.1(3) 20.2(3) o TC=70oC 53.9 28.5 W 6.2(3) 4.0(3) EAS 94 TJ, Tstg -55~150 Symbol Rating RθJA 20.0 RθJC 2.8 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case June. 2011. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDIS1501 – Single N-Channel Trench MOSFET 30V MDIS1501 Part Number Temp. Range MDIS1501TH o -55~150 C Package Packing Quantity Rohs Status TO-251-VS(IPAK) Tube 75 units /Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 20A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - ±0.1 - 4.9 5.6 - 7.1 8.1 VGS = 4.5V, ID = 16A - 7.2 8.6 VDS = 5V, ID = 10A - 35 - 15.5 20.7 25.9 7.6 10.1 12.6 - 3.7 - - 2.9 - 1013 1350 1688 TJ=125oC RDS(ON) gfs - V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 20A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 99 132 165 Output Capacitance Coss 195 261 326 Turn-On Delay Time td(on) - 8.8 - - 12.2 - - 29.5 - - 8.6 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 20A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 1.5 3.0 Ω VSD IS = 20A, VGS = 0V - 0.8 1.1 V - 22.4 33.6 ns - 14.0 21.0 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 20A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 24.0A, VDD = 27V, VGS = 10V. 3. T < 10sec. June. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDIS1501 – Single N-Channel Trench MOSFET 30V Ordering Information 16 VGS = 10V ID, Drain Current [A] Drain-Source On-Resistance [mΩ] 3.5V 4.0V 4.5V 30 5.0V 20 3.0V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 12 VGS = 4.5V 8 VGS = 10V 4 0 3.0 5 10 15 VDS, Drain-Source Voltage [V] 25 30 35 40 45 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 100 ※ Notes : 1. VGS = 10 V 2. ID = 20.0 A 1.6 ※ Notes : ID = 20.0A RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 20 ID, Drain Current [A] 1.4 1.2 1.0 0.8 80 60 40 20 TA = 25℃ 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 ※ Notes : VGS = 0V 1 IDR, Reverse Drain Current [A] ID, Drain Current [A] ※ Notes : VDS = 5V 12 8 TA=25℃ 4 10 TA=25℃ 0 10 10 -1 0 0 1 2 3 4 0.3 5 Fig.5 Transfer Characteristics June. 2011. Version 1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDIS1501 – Single N-Channel Trench MOSFET 30V 40 1800 ※ Note : ID = 20A VDS = 15V Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss 1500 8 6 4 2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1200 900 600 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 300 Crss 0 0 0 4 8 12 16 20 0 24 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 3 10 80 Operation in This Area is Limited by R DS(on) 70 2 10 ms 60 ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 1s 10s DC 1 10 0 10 50 40 30 20 Single Pulse TJ=Max rated TC=25℃ -1 10 10 -1 0 10 1 10 0 25 2 10 10 50 75 100 125 150 TA, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Zθ JA(t), Thermal Response 10 D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 0.01 -2 single pulse 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve June. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd. MDIS1501 – Single N-Channel Trench MOSFET 30V 10 MDIS1501 – Single N-Channel Trench MOSFET 30V Package Dimension TO-251-VS (IPAK) Dimensions are in millimeters, unless otherwise specified DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. June. 2011. Version 1.2 5 MagnaChip Semiconductor Ltd.