AP40P03GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -30V RDS(ON) 28mΩ ID G ▼ RoHS Compliant BVDSS -30A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -30 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -18 A 1 IDM Pulsed Drain Current -120 A PD@TC=25℃ Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 201109063-1/4 AP40P03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.02 - V/℃ VGS=-10V, ID=-18A - - 28 mΩ VGS=-4.5V, ID=-10A - - 50 mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-18A - 20 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= ±20V - - ±100 nA ID=-18A - 14 22 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) Static Drain-Source On-Resistance o IGSS 2 VGS=0V, ID=-250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC VDS=-15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-18A - 56 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 30 - ns tf Fall Time RD=0.8Ω - 57 - ns Ciss Input Capacitance VGS=0V - 915 1465 pF Coss Output Capacitance VDS=-25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Min. Typ. IS=-18A, VGS=0V - - -1.2 V IS=-18A, VGS=0V, - 30 - ns dI/dt=-100A/µs - 21 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40P03GH/J 100 120 -10V -10V T A = 25 o C -7.0V 80 60 -5.0V -4.5V 40 -7.0V 80 -ID , Drain Current (A) -ID , Drain Current (A) 100 TA=150oC 60 -5.0V 40 -4.5V 20 20 V G = -3.0 V V G = -3.0 V 0 0 0 2 4 6 8 0 2 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6 8 Fig 2. Typical Output Characteristics 1.6 50 I D = -10 A T C =25 ℃ I D =-1 8 A V G =-10V 1.4 40 Normalized RDS(ON) RDS(ON) (mΩ ) 4 -V DS , Drain-to-Source Voltage (V) 30 1.2 1.0 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 18 15 Normalized -VGS(th) (V) 2.0 -IS(A) 12 o o T j =150 C 9 T j =25 C 6 1.5 1.0 0.5 3 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40P03GH/J f=1.0MHz 10000 V DS =- 24 V I D =-1 8 A 10 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 1000 C iss 4 C oss C rss 2 100 0 0 5 10 15 20 25 1 30 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000.0 100.0 100us -ID (A) 13 -V DS , Drain-to-Source Voltage (V) 1ms 10.0 10ms 100ms 1s DC T c =25 o C Single Pulse 1.0 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4