DMT4004LPS Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS Features RDS(ON) Max ID TC = +25°C 2.5mΩ @ VGS = 10V 90A 4mΩ @ VGS = 4.5V 90A 40V Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimizes power losses Low Qg – minimizes switching losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Engine Management Systems Body Control Electronics DC-DC Converters Case: PowerDI5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View Bottom View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMT4004LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking T4004LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) T4004LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 1 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT4004LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +70°C (Note 8) Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Value 40 ±20 26 21 90 ID ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L=0.2mH Avalanche Energy, L=0.2mH Unit V V A A 90 IS IDM IAS EAS 70 100 33.3 110 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.6 47 138 0.9 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25C TC = +25C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — — — 0.9 3 2.5 4 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A VGS = 0V, IS = 50A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 4508 1648 104 0.7 34.6 82.2 9.9 11.2 5.9 13.3 25.9 7.9 48.4 72.4 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 20V, VGS = 0V, f = 1MHz Ω nC VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 20V, ID = 30A ns VDD = 20V, VGS = 10V, ID = 30A, RG = 1.6Ω ns nC IF = 50A, di/dt = 100A/μs 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT4004LPS 30 150.0 VGS= 5.0V 25 VGS=4.0V VGS=3.0V 90.0 VGS=4.5V 60.0 30.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 85℃ 10 25℃ 150℃ 5 -55℃ 0 3 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 15 3.40 3.20 12 VGS=4.5V 3.00 2.80 2.60 2.40 VGS=10.0V 2.20 2.00 9 6 ID=50A 3 0 10 30 50 70 90 110 130 150 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 0.005 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.2 VGS=10V 0.004 150℃ 0.003 125℃ 85℃ 0.002 25℃ -55℃ 0.001 0 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 15 VGS=2.3V 0 125℃ 20 VGS=2.5V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) VDS= 5.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) ID, DRAIN CURRENT (A) 120.0 VGS=3.5V ID, DRAIN CURRENT (A) VGS= 10.0V 30 50 70 90 110 130 150 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature 2 1.8 1.6 VGS=4.5V, ID=50A 1.4 1.2 VGS=10V, ID=50A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 3 of 6 www.diodes.com May 2016 © Diodes Incorporated 2 0.005 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT4004LPS 0.004 VGS=4.5V, ID=50A 0.003 0.002 VGS=10V, ID=50A 0.001 1.5 1 ID=250μA 0.5 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature VGS=0V, TA=150℃ 120 VGS=0V, TA=125℃ 90 60 VGS=0V, TA=85℃ VGS=0V, TA=25℃ 30 VGS=0V, TA=-55℃ CJ, JUNCTION CAPACITANCE (pF) 10000 150 IS, SOURCE CURRENT (A) ID=1mA Ciss f=1MHz Coss 1000 Crss 100 10 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 1000 PW =10μs RDS(ON) Limited PW =100μs 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 150 6 4 VDS=20V, ID=30A 2 0 100 10 20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge PW =1ms 10 PW =10ms PW =100ms 1 0.1 0 PW = 1μs TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.1 PW =1s 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 4 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT4004LPS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=0.9℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A G L1 b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10º 12º 11º θ1 6º 8º 7º All Dimensions in mm POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 5 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT4004LPS Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X4 Y3 Y5 Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y2 X3 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587 Rev.3 - 2 6 of 6 www.diodes.com May 2016 © Diodes Incorporated