Diodes DMN10H170SVT-7 N-channel enhancement mode mosfet Datasheet

DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
160mΩ @ VGS = 10V
2.6A
200mΩ @ VGS = 4.5V
2.3A
V(BR)DSS





Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data

Case: TSOT26
making it ideal for high-efficiency power management applications.

Case Material: Molded Plastic, “Green” Molding Compound.
Applications

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3

Weight: 0.015 grams (Approximate)
UL Flammability Classification Rating 94V-0



Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D
TSOT26
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H170SVT-7
DMN10H170SVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
11N
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
Mar
3
11N = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: B = 2014)
M = Month (ex: 9 = September)
YM
PRODUCT
INFORMATION
ADVANCED NEW
100V
Features and Benefits
2016
D
Apr
4
2017
E
May
5
Jun
6
1 of 6
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2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov
N
Dec
D
February 2015
© Diodes Incorporated
DMN10H170SVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
PRODUCT
INFORMATION
ADVANCED NEW
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
ID
2.6
2.1
A
Pulsed Drain Current (10μs pulse, duty cycle ≦1%)
IDM
11.2
A
Maximum Body Diode Continuous Current (Note 6)
IS
2.0
A
Symbol
Value
Units
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
Steady
State
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
PD
RJA
Operating and Storage Temperature Range
Electrical Characteristics
1.2
1.7
101
73
W
°C/W
RJC
15
TJ, TSTG
-55 to +150
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
100


V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1.0
µA
VDS = 100V, VGS = 0V
Gate-Body Leakage
IGSS


±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
2.0
3.0
V
VDS = VGS, ID = 250µA

115
160

124
200
VSD

0.9
1.0
Input Capacitance
Ciss

1,167

Output Capacitance
Coss

36

Reverse Transfer Capacitance
Crss

25

Gate Resistance
Rg

1.3

Total Gate Charge (VGS = 4.5V)
Qg

4.9

Total Gate Charge (VGS = 10V)
Qg

9.7

Qgs

2.0

Gate-Drain Charge
Qgd

2.0

Turn-On Delay Time
tD(on)

10

Turn-On Rise Time
tr

11

Turn-Off Delay Time
tD(off)

42

tf



12
30
35



ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS (ON)
mΩ
VGS = 10V, ID = 5.0A
VGS = 4.5V, ID = 5.0A
V
VGS = 0V, IS = 10A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 80V, ID = 12.8A
nS
VDD = 50V, VGS = 10V,
RG = 25Ω, ID = 12.8A
nS
nC
VGS = 0V, IS=12.8A, di/dt=100A/µs
DYNAMIC CHARACTERISTICS (Note 8)
Gate-Source Charge
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
trr
Qrr
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
2 of 6
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February 2015
© Diodes Incorporated
DMN10H170SVT
10
10
VDS = 5.0V
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8
VGS = 7.0V
VGS = 8.0V
6
VGS = 9.0V
VGS = 6.0V
4
VGS = 5.0V
VGS = 4.5V
2
6
TA = 125°C
T A = 85°C
4
T A = 25°C
VGS = 3.5V
VGS = 4.0V
TA = 150°C
2
T A = -55°C
VGS = 3.0V
0.5
1
1.5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.2
VGS = 1.8V
0.18
0.16
0.14
VGS = 2.5V
0.12
0.1
VGS = 4.5V
0.08
0.06
0.04
0.02
0
1
2
3
4
5
6
7
8
9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω)
0
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
0.4
Vgs= 4.5V
0.35
I D = 150°C
0.3
I D = 125°C
0.25
I D = 85°C
0.2
0.15
ID = 25°C
0.1
ID = -55°C
0.05
0
0
10
2.8
2
4
6
8
Id, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain-Source and Temperature
10
0.3
VGS = 10V
I D = 10A
VGS = 10V
2.4
0.25
ID = 10A
2
VGS = 5V
1.6
I D = 5A
1.2
RD S(ON ), DRAIN-SOURCE
ON-RESISTANCE ( Ω)
RD S(ON ), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
PRODUCT
INFORMATION
ADVANCED NEW
8
0.2
VGS = 5V
I D = 10A
0.15
0.1
0.05
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
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www.diodes.com
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
DMN10H170SVT
10
V GS(TH), GATE THRESHOLD VOLTAG E (V)
9
2.5
8
IS, SOURCE CURRENT (A)
I D = 250µA
2
1.5
1
0.5
7
6
5
TA = 25 C
4
3
2
1
0
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1.2
10
10000
f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTIO N CAPACITANCE (pF)
9
Ciss
1000
100
Coss
Crss
10
8
VDS = 80V
I D = 12.8A
7
6
5
4
3
2
1
1
0
10
20
30
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0
2
4
6
8
Qg , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
10
100
RDS(on)
Limited
10
ID , DRAIN CURRENT (A)
PRODUCT
INFORMATION
ADVANCED NEW
3
1
DC
PW = 10s
PW = 1s
0.1
PW = 100ms
TJ(m ax) = 150°C
PW = 10ms
PW = 1ms
0.01 TA = 25°C
V GS = 10V
Single Pulse
PW = 100µs
DUT on 1 * MRP Board
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
1000
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February 2015
© Diodes Incorporated
DMN10H170SVT
PRODUCT
INFORMATION
ADVANCED NEW
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 101°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
E
E1
L2
c
4x1
e
L

6x b
A
A2
A1
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
5 of 6
www.diodes.com
TSOT26
Dim Min Max Typ
A
1.00


A1 0.01 0.10

A2 0.84 0.90

D
2.90


E
2.80


E1
1.60


b
0.30 0.45

c
0.12 0.20

e
0.95


e1
1.90


L
0.30 0.50
L2
0.25


θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
February 2015
© Diodes Incorporated
DMN10H170SVT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PRODUCT
INFORMATION
ADVANCED NEW
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
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Copyright © 2015, Diodes Incorporated
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DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
6 of 6
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February 2015
© Diodes Incorporated
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