Diodes DMTH4004LK3Q N-channel enhancement mode mosfet Datasheet

DMTH4004LK3Q
Green
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
BVDSS
RDS(ON) Max
Qg Typ
40V
3mΩ @ VGS = 10V
5mΩ @ VGS = 4.5V
83nC
35nC
ID Max
TC = +25°C
(Note 10)
100A
100A

Rated to +175°C – Ideal for High Ambient Temperature
Environments

100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application

Low RDS(ON) – Minimizes Power Losses

Low Qg – Minimizes Switching Losses



Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:

Case: TO252

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)

Engine Management Systems

Body Control Electronics

DC-DC Converters

Motor Control

Pin Out Top View
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMTH4004LK3Q-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T4004L
YYWW
DMTH4004LK3Q
Document number: DS37791 Rev. 2 - 2
= Manufacturer’s Marking
T4004L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TC = +25°C
(Note 10)
TC = +100°C
Continuous Drain Current (Note 7) VGS = 10V
Value
40
±20
100
ID
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.2mH
Avalanche Energy, L = 0.2mH
Units
V
V
A
IDM
IS
IAS
EAS
100
200
100
30
90
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.9
38
180
0.8
-55 to +175
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current, TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
—
—
—
—
—
—
1
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
1
—
—
—
—
2.4
4
0.7
3
3
5
1.2
V
mΩ
mΩ
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
VGS = 0V, IS = 50A
tD(ON)
tR
tD(OFF)
tF
tRR
—
—
—
—
—
—
—
—
—
—
—
—
—
4,450
1,407
74
0.7
35
83
10
11.2
5.9
13.2
25.8
7.9
48
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
QRR
—
72
—
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
Test Condition
VDS = 25V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 20V, ID = 30A
VGS = 10V, VDS = 20V,
RG = 1.6Ω, ID = 30A
IF = 50A, di/dt = 100A/μs
IF = 50A, di/dt = 100A/μs
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
while operating in a steady state.
7. Thermal resistance from junction to solder point (on the exposed drain pin).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package Limited.
DMTH4004LK3Q
Document number: DS37791 Rev. 2 - 2
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DMTH4004LK3Q
30
100.0
VDS = 10V
VGS = 10.0V
VGS = 4.5V
80.0
70.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
90.0
VGS = 4.0V
60.0
VGS = 3.5V
50.0
40.0
30.0
20.0
20
15
150℃
85℃
175℃
-55℃
0
0.5
1
1.5
2
2.5
3
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
6.00
5.00
VGS = 4.5V
4.00
3.00
2.00
VGS = 10V
1.00
0.00
0
5
10
15
20
25
30
35
40
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
45
50
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
25℃
0
0.0
20
18
16
14
12
10
8
ID = 50A
6
4
2
0
2
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
4
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.2
0.005
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
125℃
10
5
VGS = 3.0V
10.0
25
VGS = 10V
150℃
0.004
175℃
125℃
0.003
85℃
25℃
0.002
-55℃
0.001
0
10
20
30
40
50
60
70
80
90
100
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMTH4004LK3Q
Document number: DS37791 Rev. 2 - 2
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2
1.8
1.6
VGS = 10V, ID = 50A
1.4
1.2
1
VGS = 4.5V, ID = 50A
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
February 2016
© Diodes Incorporated
0.008
3
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMTH4004LK3Q
0.006
VGS = 4.5V, ID = 50A
0.004
0.002
VGS = 10V, ID = 50A
0
-50
-25
0
25
50
75
2.5
2
ID = 1mA
1.5
ID = 250μA
1
0.5
0
100 125 150 175
-50
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
100
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
10000
f=1MHz
90
VGS = 0V
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
-25
80
70
60
50
TA = 85oC
40
TA = 125oC
30
TA = 150oC
20
TA = 25oC
TA = 175oC
10
TA = -55oC
Ciss
Coss
1000
Crss
100
10
0
0
0.3
0.6
0.9
0
1.2
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
10
1000
RDS(ON) Limited
PW =10µs
PW =1µs
ID, DRAIN CURRENT (A)
VGS (V)
8
6
4
VDS = 20V, ID = 30A
2
0
100
PW =1ms
PW =10ms
1
0.1
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
Qg (nC)
Document number: DS37791 Rev. 2 - 2
TJ(Max) = 175℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
VGS= 10V
0.1
1
PW =100ms
PW =1s
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
DMTH4004LK3Q
PW =100µs
10
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1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t) = r(t) * RθJC
RθJC = 0.8℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMTH4004LK3Q
Document number: DS37791 Rev. 2 - 2
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DMTH4004LK3Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
E
A
b3
7°±1°
c
L3
D
A2
L4
e
H
b(3x)
b2(2x)
Gauge Plane
0.508
D1
E1
Seating Plane
a
L
A1
2.74REF
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c
0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
e
2.286
E 6.45 6.70 6.58
E1 4.32
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
X1
Dimensions
C
X
X1
Y
Y1
Y2
Y1
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMTH4004LK3Q
Document number: DS37791 Rev. 2 - 2
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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Document number: DS37791 Rev. 2 - 2
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