DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate to 2kV Lead Free/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Load switch • • Case: X1-DFN1212-3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.005 grams (approximate) Drain Body Diode Gate S D Gate Protection Diode Top View ESD PROTECTED TO 2kV Bottom View G Source Equivalent Circuit Top view Pin-out Ordering Information (Note 3) Part Number DMN62D0SFD-7 Notes: Case X1-DFN1212-3 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information K62 YM Date Code Key Year Code Month Code 2007 U Jan 1 K62 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2008 V Feb 2 DMN62D0SFD Document number: DS35473 Rev. 3 - 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 1 of 6 www.diodes.com Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D January 2012 © Diodes Incorporated DMN62D0SFD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 5) VGS = 5V Steady State t<10s ID Value 60 ±20 540 430 ID 630 500 mA ID 430 340 mA mA 510 410 1.0 1.0 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Units V V IDM IS mA A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 4) Value 0.43 260 182 0.89 140 98 112 -55 to +150 RθJA Total Power Dissipation (Note 5) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 100 10 V nA μA VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.6 130 0.8 2.5 2 3 1.2 V Static Drain-Source On-Resistance 1.0 - mS V VDS = 10V, ID = 1mA VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 30.2 4.4 2.8 131 0.39 0.87 0.14 0.09 3.95 3.81 16.0 9.04 - pF pF pF Ω nC nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10.0V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 1A VDS = 30V, ID = 200mA VGS = 10V, RG = 25Ω 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN62D0SFD Document number: DS35473 Rev. 3 - 2 2 of 6 www.diodes.com January 2012 © Diodes Incorporated DMN62D0SFD IS, MAXIMUM FORWARD CURRENT (A) ID, DRAIN CURRENT (A) T A = 150°C 0.1 TA = 125°C TA = 85°C T A = 25°C 0.01 TA = -55°C 0.001 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic VGS= 5.0V TA = 125°C T A = 150°C TA = 85°C TA = 25°C TA = -55°C 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Temperature VGS = 10 V ID = 300mA VGS = 10V ID = 150A 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN62D0SFD Document number: DS35473 Rev. 3 - 2 TA = 125°C 3 of 6 www.diodes.com 1.1 T A = 150°C TA = 85°C TA = 25°C TA = -55°C 0 1.0 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 2 Maximum Forward Current vs. Source-Drain Voltage VGS= 10V VGS(th), GATE THRESHOLD VOLTAGE (V) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 ID = 1mA -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature January 2012 © Diodes Incorporated 6 CT, JUNCTION CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 60 7 5 4 3 ID = 300mA 2 1 ID = 150mA 0 50 4 8 12 16 20 ID, DRAIN-SOURCE CURRENT Fig. 7 Typical On-Resistance vs. Drain Current f = 1MHz 40 30 Ciss 20 10 0 0 Coss Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Junction Capacitance 40 RDS(on) Limited VDS = 10V, ID = 250mA 8 DC ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) 10 6 4 2 0 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs PW = 10µs 0.1 Qg, TOTAL GATE CHARGE (nC) Fig. 9 Gate Charge 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 SOA, Safe Operation Area 100 10 Single Pulse RθJA = 261°C/W RθJA(t) = RθJA * r(t) TJ -TA = P * RθJA(t) 9 P(pk), PEAK TRANSIENT POWER (W) NEW PRODUCT DMN62D0SFD 8 7 6 5 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation DMN62D0SFD Document number: DS35473 Rev. 3 - 2 4 of 6 www.diodes.com January 2012 © Diodes Incorporated DMN62D0SFD r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 RθJA(t) = r(t) * RθJA D = 0.01 RθJA = 261°C/W Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A A3 A1 D e b1 (2x) E L X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm b Suggested Pad Layout X Y X1 (2x) Y2 Y1 (2x) Dimensions C X X1 Y Y1 Y2 Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 C DMN62D0SFD Document number: DS35473 Rev. 3 - 2 5 of 6 www.diodes.com January 2012 © Diodes Incorporated DMN62D0SFD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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