STMicroelectronics M48T212A-85MH6 3.3v timekeeper controller Datasheet

M48T212A
3.3V TIMEKEEPER® CONTROLLER
PRELIMINARY DATA
■
CONVERTS LOW POWER SRAM into
NVRAMs
■
YEAR 2000 COMPLIANT (4-Digit Year)
■
USES SUPER CAPACITOR or LITHIUM
BATTERY (User Supplied)
■
BATTERY LOW FLAG
■
INTEGRATED REAL TIME CLOCK,
POWER-FAIL CONTROL CIRCUIT
■
AUTOMATIC POWER-FAIL CHIP DESELECT
and WRITE PROTECTION
■
WATCHDOG TIMER
■
WRITE PROTECT VOLTAGES
(VPFD = Power-fail Deselect Voltage):
– M48T212A: 2.7V ≤ VPFD ≤ 3.0V
■
MICROPROCESSOR POWER-ON RESET
■
PROGRAMMABLE ALARM OUTPUT ACTIVE
in the BATTERY BACKED-UP MODE
DESCRIPTION
The M48T212A is a self-contained device that includes a real time clock (RTC), programmable
alarms, a watchdog timer, and two external chip
enable outputs which provide control of up to four
(two in parallel) external low-power static RAMs.
A built-in 32.768 kHz oscillator (external crystal
controlled) is used for the clock/calendar function.
Access to all TIMEKEEPER functions and the external RAM is the same as conventional byte-wide
SRAM. The 16 TIMEKEEPER Registers offer
Century, Year, Month, Date, Day, Hour, Minute,
Second, Control, Calibration, Alarm, Watchdog,
and Flags. Externally attached static RAMs are
controlled by the M48T212A via the E1CON and
E2CON signals (see Table 4).
Automatic backup and write protection for an external SRAM is provided through VOUT, E1CON
and E2CON pins. (Users are urged to insure that
voltage specifications, for both the controller chip
and external SRAM chosen, are similar).
44
1
SOH44 (MH)
Figure 1. Logic Diagram
VCC
VCAP
4
8
A0-A3
DQ0-DQ7
A
E
IRQ/FT
EX
RST
W
G
E1CON
M48T212A
E2CON
VCCSW
WDI
RSTIN1
VOUT
RSTIN2
X0
XI
VSS
VBAT–
AI03047
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/20
M48T212A
Table 1. Signal Names
Figure 2. SOIC Connections
RSTIN1
RSTIN2
RST
NC
XO
XI
NC
NC
A
NC
NC
NC
A3
A2
A1
A0
WDI
E2CON
DQ0
DQ1
DQ2
VSS
44
1
43
2
3
42
4
41
40
5
39
6
38
7
37
8
36
9
35
10
34
11
M48T212A
33
12
32
13
31
14
30
15
29
16
28
17
27
18
26
19
25
20
24
21
23
22
VCC
VOUT
VCCSW
IRQ/FT
EX
NC
NC
NC
NC
NC
G
W
VBAT–
NC
E
E1CON
DQ7
DQ6
DQ5
DQ4
DQ3
VCAP
AI03048
The lithium energy source (or super capacitor)
used to permanently power the real time clock is
also used to retain RAM data in the absence of
VCC power through the VOUT pin.
The chip enable outputs to RAM (E1CON and
E2CON) are controlled during power transients to
prevent data corruption. The date is automatically
adjusted for months with less than 31 days and
corrects for leap years. The internal watchdog timer provides programmable alarm windows.
The nine clock bytes (Fh - 9h and 1h) are not the
actual clock counters, they are memory locations
consisting of BiPORTTM read/write memory cells
within the static RAM array. Clock circuitry updates the clock bytes with current information once
per second. The information can be accessed by
the user in the same manner as any other location
in the static memory array.
Byte 8h is the clock control register. This byte controls user access to the clock information and also
stores the clock calibration setting. Byte 7h con2/20
A0-A3
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
XO
Oscillator Output
XI
Oscillator Input
RSTIN1
Reset 1 Input
RSTIN2
Reset 2 Input
RST
Reset Output (Open Drain)
WDI
Watchdog Input
A
Bank Select Input
E
Chip Enable Input
EX
External Chip Enable Input
G
Output Enable Input
W
Write Enable Input
E1CON
RAM Chip Enable 1 Output
E2CON
RAM Chip Enable 2 Output
IRQ/FT
Int/Freq Test Output (Open Drain)
Vccsw
VCC Switch Output
VOUT
Supply Voltage Output
VCAP
Super Capacitor Input
VBAT–
Battery Ground Pin (optional)
VCC
Supply Voltage
VSS
Ground
NC
Not Connected internally
tains the watchdog timer setting. The watchdog
timer can generate either a reset or an interrupt,
depending on the state of the Watchdog Steering
bit (WDS). Bytes 6h-2h include bits that, when programmed, provide for clock alarm functionality.
Alarms are activated when the register content
matches the month, date, hours, minutes, and
seconds of the clock registers. Byte 1h contains
century information. Byte 0h contains additional
flag information pertaining to the watchdog timer,
alarm and battery status.
The M48T212A also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the TIMEKEEPER register data and
external SRAM, providing data security in the
midst of unpredictable system operation. As V CC
falls, the control circuitry automatically switches to
the battery, maintaining data and clock operation
until valid power is restored.
M48T212A
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
TSTG
TSLD (2)
Parameter
Value
Unit
0 to 70
°C
–55 to 125
°C
260
°C
Ambient Operating Temperature
Storage Temperature (VCC Off, Oscillator Off)
Lead Solder Temperature for 10 sec
VIO
Input or Output Voltages
–0.3 to 4.6
V
VCC
Supply Voltage
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
Table 3. Operating Modes (1)
VCC
E
G
W
DQ7-DQ0
Power
VIH
X
X
High-Z
Standby
VIL
X
VIL
DIN
Active
Read
VIL
VIL
VIH
DOUT
Active
Read
VIL
VIH
VIH
High-Z
Active
Mode
Deselect
Write
3.0V to 3.6V
Deselect
VSO to VPFD (min) (2)
X
X
X
High-Z
CMOS Standby
Deselect
≤ VSO (2)
X
X
X
High-Z
Battery Back-Up
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Switchover Voltage. (See Table 7 for details).
Table 4. Truth Table for SRAM Bank Select (1)
Mode
VCC
EX
A
E1CON
E2CON
Power
Low
Low
Low
High
Active
Low
High
High
Low
Active
High
X
High
High
Standby
Select
3.0V to 3.6V
Deselect
Deselect
VSO to VPFD (min) (2)
X
X
High
High
CMOS Standby
Deselect
≤ VSO (2)
X
X
High
High
Battery Back-Up
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Switchover Voltage. (See Table 7 for details).
3/20
M48T212A
Figure 3. Hardware Hookup
A0-A18
3.3V
VCCSW
VCC
0.1µF
MOTOROLA
MTD20P06HDL
A0-A3
A0-Axx
1N5817 (1)
VOUT
A
VCC
0.1µF
E
M48T212A
E
EX
W
CMOS
SRAM
E1CON
Note 2
G
E2CON
WDI
RSTIN1
A0-Axx
RSTIN2
RST
DQ0-DQ7
VCAP
SuperCap Supply
VCC
IRQ/FT
CMOS
SRAM
E
X0
32 kHz
Crystal
VSS
XI
AI03049
Note: 1. See description in Power Supply Decoupling and Undershoot Protection.
2. Traces connecting E1CON and E2CON to external SRAM should be as short as possible.
Figure 4. AC Testing Load Circuit (3,4)
Table 5. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
645Ω
DEVICE
UNDER
TEST
Input and Output Timing Ref. Voltages
0 to 3V
1.5V
Note that Output Hi-Z is defined as the point where data
is no longer driven.
CL = 100pF or 5pF (1)
CL = 30 pF (2)
1.75V
CL includes JIG capacitance
AI03239
Note: 1. DQ0-DQ7
2. E1CON and E2 CON
3. Excluding open-drain output pins
4/20
≤ 5ns
M48T212A
Table 6. Capacitance (1)
(TA = 25 °C, f = 1 MHz)
Symbol
CIN
COUT (2)
Parameter
Test Condition
Input Capacitance
Input/Output Capacitance
Min
Max
Unit
VIN = 0V
10
pF
VOUT = 0V
10
pF
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
Table 7. DC Characteristics
(TA = 0 to 70°C; VCC = 3V to 3.6V)
Symbol
ILI
(1,2)
ILO (1)
Parameter
Input Leakage Current
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
IBAT
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ VCC
±1
µA
0V ≤ VOUT ≤ VCC
±1
µA
10
mA
E = VIH
3
mA
E = VCC –0.2
2
mA
800
nA
100
nA
Outputs Open
Typ
4
Battery Current OSC ON
575
Battery Current OSC OFF
VIL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
Output Low Voltage (open drain) (3)
IOL = 10mA
0.4
V
VOH
Output High Voltage
IOH = –1.0mA
2.4
VOHB (4)
VOH Battery Back-up
IOUT2 = –1.0µA
2.0
IOUT1 (5)
VOUT Current (Active)
IOUT2
VOUT Current (Battery Back-up)
VPFD
Power-fail Deselect Voltage
VSO
Battery Back-up Switchover Voltage
VBAT
VCAP
V
3.6
V
VOUT1 > VCC –0.3
70
mA
VOUT2 > VBAT –0.3
100
µA
3.0
V
2.7
2.9
VPFD –100mV
V
Battery Voltage
3.0
V
Capacitor Voltage (6)
VCC
V
Note: 1.
2.
3.
4.
Outputs deselected.
RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor.
For IRQ/FT & RST pins (Open Drain).
Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life.
5. External SRAM must match TIMEKEEPER Controller chip VCC specification.
6. When fully charged.
5/20
M48T212A
Figure 5. Power Down/Up AC Waveform
VCC
VPFD (max)
VPFD (min)
VSO
tF
tR
tFB
INPUTS
VALID
OUTPUTS
VALID
tRB
tREC
DON'T CARE
VALID
HIGH-Z
VALID
RST
VCCSW
AI02638
Table 8. Power Down/Up AC Characteristics
(TA = 0 to 70°C)
Symbol
6/20
Parameter
Min
Max
Unit
tF
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB
VPFD (min) to VSS VCC Fall Time
150
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tREC
VPFD (max) to RST High
40
tRB
VSS to VPFD (min) VCC Rise Time
5
200
ms
µs
M48T212A
Table 9. Chip Enable Control and Bank Select Characteristics
(TA = 0 to 70°C)
M48T212A
Symbol
Parameter
-85
Unit
Min
Max
tEXPD
EX to E1CON or E2CON (Low or High)
15
ns
tAPD
A to E1CON or E2CON (Low or High)
15
ns
Figure 6. Chip Enable Control and Bank Select Timing
EX
tEXPD
tAPD
A
tEXPD
E1CON
E2CON
AI02639
Table 10. Read Mode Characteristics
(TA = 0 to 70°C)
M48T212A
Symbol
Parameter
-85
Min
Unit
Max
tAVAV
Read Cycle Time
tAVQV
Address Valid to Output Valid
85
ns
tELQV
Chip Enable Low to Output Valid
85
ns
tGLQV
Output Enable Low to Output Valid
35
ns
85
ns
tELQX (1)
Chip Enable Low to Output Transition
5
ns
tGLQX (1)
Output Enable Low to Output Transition
0
ns
tEHQZ (1)
Chip Enable High to Output Hi-Z
25
ns
tGHQZ (1)
Output Enable High to Output Hi-Z
25
ns
tAXQX
Address Transition to Output Transition
5
ns
Note: 1. CL = 5pF
7/20
M48T212A
Address Decoding
The M48T212A accommodates 4 address lines
(A3-A0) which allow access to the sixteen bytes of
the TIMEKEEPER clock registers. All TIMEKEEPER registers reside in the controller chip itself. All
TIMEKEEPER registers are accessed by enabling
E (Chip Enable).
READ MODE
The M48T212A executes a read cycle whenever
W (Write Enable) is high and E (Chip Enable) is
low. The unique address specified by the address
inputs (A3-A0) defines which one of the on-chip
TIMEKEEPER registers is to be accessed. When
the address presented to the M48T212A is in the
range of 0h-Fh, one of the on-board TIMEKEEPER registers is accessed and valid data will be
available to the eight data output drivers within
tAVQV after the address input signal is stable, providing that the E and G access times are also satisfied. If they are not, then data access must be
measured from the latter occurring signal (E or G)
and the limiting parameter is either tELQV for E or
tGLQV for G rather than the address access time.
When EX input is low, an external SRAM location
will be selected.
Note: Care should be taken to avoid taking both E
and EX low simultaneously to avoid bus contention.
Table 11. Write Mode AC Characteristics
(TA = 0 to 70°C)
M48T212A
Symbol
Parameter
-85
Min
tAVAV
Write Cycle Time
tAVWL
Unit
Max
85
ns
Address Valid to Write Enable Low
0
ns
tAVEL
Address Valid to Chip Enable Low
0
ns
tWLWH
Write Enable Pulse Width
55
ns
tELEH
Chip Enable Low to Chip Enable High
60
ns
tWHAX
Write Enable High to Address Transition
0
ns
tEHAX
Chip Enable High to Address Transition
0
ns
tDVWH
Input Valid to Write Enable High
30
ns
tDVEH
Input Valid to Chip Enable High
30
ns
tWHDX
Write Enable High to Input Transition
0
ns
tEHDX
Chip Enable High to Input Transition
0
ns
tWLQZ (1,2)
Write Enable Low to Output High-Z
tAVWH
Address Valid to Write Enable High
65
ns
tAVEH
Address Valid to Chip Enable High
65
ns
5
ns
tWHQX (1,2)
Write Enable High to Output Transition
25
Note: 1. CL = 5pF.
2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
8/20
ns
M48T212A
Figure 7. Read Cycle Timing: RTC Control Signals
READ
tAVAV
READ
WRITE
tAVAV
tAVAV
ADDRESS
tELQV
tAVQV
tAVWL
tWHAX
E
tELQX
tGLQV
G
tWLWH
W
tGLQX
tAXQX
tGHQZ
DATA OUT
VALID
DATA OUT
VALID
DQ7-DQ0
DATA IN
VALID
AI02640
Figure 8. Write Cycle Timing: RTC Control Signals
WRITE
WRITE
READ
tAVAV
tAVAV
tAVAV
ADDRESS
tAVEH
tAVEL
tELEH
tAVWH
tEHAX
tWHAX
tAVQV
E
tGLQV
G
tEHDX
tAVWL
tWLWH
tWHQX
tWLQZ
W
tEHQZ
DQ0-DQ7
DATA OUT
VALID
tDVEH
DATA IN
VALID
tDVWH
tWHDX
DATA IN
VALID
DATA OUT
VALID
AI02641
9/20
M48T212A
Table 12. Alarm Repeat Modes
RPT5
RPT4
RPT3
RPT2
RPT1
Alarm Setting
1
1
1
1
1
Once per Second
1
1
1
1
0
Once per Minute
1
1
1
0
0
Once per Hour
1
1
0
0
0
Once per Day
1
0
0
0
0
Once per Month
0
0
0
0
0
Once per Year
Figure 9. Alarm Interrupt Reset Waveforms
A0-A3
1h
ADDRESS 0h
Fh
ACTIVE FLAG BIT
IRQ/FT
HIGH-Z
AI03021
WRITE MODE
The M48T212A is in the Write Mode whenever W
(Write Enable) and E (Chip Enable) are in a low
state after the address inputs are stable. The start
of a write is referenced from the latter occurring
falling edge of W or E. A write is terminated by the
earlier rising edge of W or E. The addresses must
be held valid throughout the cycle. E or W must return high for a minimum of tEHAX from Chip Enable
or tWHAX from Write Enable prior to the initiation of
another read or write cycle. Data-in must be valid
tDVWH prior to the end of write and remain valid for
tWHDX afterward.
G should be kept high during write cycles to avoid
bus contention; although, if the output bus has
been activated by a low on E and G a low on W will
disable the outputs tWLQZ after W falls.
When E is low during the write, one of the onboard TIMEKEEPER registers will be selected and
data will be written into the device. When EX is low
(and E is high) an external SRAM location is selected.
Note: Care should be taken to avoid taking both E
and EX low simultaneously to avoid bus contention.
10/20
DATA RETENTION MODE
With valid VCC applied, the M48T212A can be accessed as described above with read or write cycles. Should the supply voltage decay, the
M48T212A will automatically deselect, write protecting itself (and any external SRAM) when V CC
falls between V PFD (max) and V PFD (min). This is
accomplished by internally inhibiting access to the
clock registers via the E signal. At this time, the
Reset pin (RST) is driven active and will remain
active until VCC returns to nominal levels.
External RAM access is inhibited in a similar manner by forcing E1CON and E2CON to a high level.
This level is within 0.2V of the VBAT. E1CON and
E2CON will remain at this level as long as VCC remains at an out-of tolerance condition.
When V CC falls below the level of the battery
(VBAT), power input is switched from the VCC pin
to the battery and the clock registers and external
SRAM are maintained from the attached battery
supply. All outputs become high impedance. The
VOUT pin is capable of supplying 100µA of current
to the attached memory with less than 0.3V drop
under this condition. On power up, when V CC returns to a nominal value, write protection continues for 200ms (max) by inhibiting E1CON or
E2CON.
M48T212A
Table 13. TIMEKEEPER Register Map
Address
D7
D6
Fh
D5
D4
D3
D2
D1
10 Years
Year
Year
00-99
Month
Month
01-12
Date: Day of Month
Date
01-31
Day of Week
Day
01-7
Hours (24 Hour Format)
Hour
00-23
Eh
0
0
Dh
0
0
Ch
0
FT
Bh
0
0
Ah
0
10 Minutes
Minutes
Min
00-59
9h
ST
10 Seconds
Seconds
Sec
00-59
8h
W
R
S
7h
WDS
BMB4
BMB3
BMB2
6h
AFE
0
ABE
Al 10M
5h
RPT4
RPT5
4h
RPT3
0
3h
RPT2
2h
RPT1
1h
0h
Keys:
0
D0
Function/Range
BCD Format
10M
10 Date
0
0
0
10 Hours
Calibration
BMB1
RB1
RB0
Watchdog
Alarm Month
A Month
01-12
AI 10 Date
Alarm Date
A Date
01-31
AI 10 Hour
Alarm Hour
A Hour
00-23
Alarm 10 Minutes
Alarm Minutes
A Min
00-59
Alarm 10 Seconds
Alarm Seconds
A Sec
00-59
100 Year
Century
00-99
1000 Year
WDF
BMB0
Control
AF
Y
BL
S = Sign Bit
FT = Frequency Test Bit
R = Read Bit
W = Write Bit
ST = Stop Bit
0 = Must be set to zero
BL = Battery Low Flag
BMB0-BMB4 = Watchdog Multiplier Bits
The RST signal also remains active during this
time (see Figure 5).
Note: Most low power SRAMs on the market today can be used with the M48T212A TIMEKEEPER Controller. There are, however some criteria
which should be used in making the final choice of
an SRAM to use. The SRAM must be designed in
a way where the chip enable input disables all other inputs to the SRAM. This allows inputs to the
M48T212A and SRAMs to be Don’t Care once
VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0V. The
chip enable access time must be sufficient to meet
the system needs with the chip enable output
propagation delays included.
If the SRAM includes a second chip enable pin
(E2), this pin should be tied to VOUT.
Y
Y
Y
Y
Flag
AFE = Alarm Flag Enable Flag
RB0-RB1 = Watchdog Resolution Bits
WDS = Watchdog Steering Bit
ABE = Alarm in Battery Back-Up Mode Enable Bit
RPT1-RPT5 = Alarm Repeat Mode Bits
WDF = Watchdog flag
AF = Alarm flag
Y = ’1’ or ’0’
If data retention lifetime is a critical parameter for
the system, it is important to review the data retention current specifications for the particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0V. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally
at elevated temperatures). The system level requirements will determine the choice of which value to use.
The data retention current value of the SRAMs can
then be added to the IBAT value of the M48T212A
to determine the total current requirements for
data retention. The available battery capacity can
then be divided by this current to determine the
amount of data retention available.
For a further more detailed review of lifetime calculations, please see Application Note AN1012.
11/20
M48T212A
TIMEKEEPER REGISTERS
The M48T212A offers 16 internal registers which
contain TIMEKEEPER, Alarm, Watchdog, Flag,
and Control data. These registers are memory locations which contain external (user accessible)
and internal copies of the data (usually referred to
as BiPORT TM TIMEKEEPER cells).
The external copies are independent of internal
functions except that they are updated periodically
by the simultaneous transfer of the incremented
internal copy. TIMEKEEPER and Alarm Registers
store data in BCD. Control, Watchdog and Flags
Registers store data in Binary Format.
CLOCK OPERATIONS
Reading the Clock
Updates to the TIMEKEEPER registers should be
halted before clock data is read to prevent reading
data in transition. Because the BiPORT TIMEKEEPER cells in the RAM array are only data registers, and not the actual clock counters, updating
the registers can be halted without disturbing the
clock itself.
Updating is halted when a ’1' is written to the
READ bit, D6 in the Control Register (8h). As long
as a `1' remains in that position, updating is halted.
After a halt is issued, the registers reflect the
count; that is, the day, date, and time that were
current at the moment the halt command was issued.
All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an update in
progress. Updating occurs 1 second after the
READ bit is reset to a ’0'.
Setting the Clock
Bit D7 of the Control Register (8h) is the WRITE
bit. Setting the WRITE bit to a `1', like the READ
bit, halts updates to the TIMEKEEPER registers.
The user can then load them with the correct day,
date, and time data in 24 hour BCD format (see
Table 13).
Resetting the WRITE bit to a `0' then transfers the
values of all time registers (Fh-9h, 1h) to the actual
TIMEKEEPER counters and allows normal operation to resume. After the WRITE bit is reset, the
next clock update will occur one second later.
Note: Upon power-up following a power failure,
the READ bit will automatically be set to a `1'. This
will prevent the clock from updating the TIME-
12/20
KEEPER registers, and will allow the user to read
the exact time of the power-down event.
Resetting the READ Bit to a `0' will allow the clock
to update these registers with the current time. The
WRITE Bit will be reset to a `0' upon powerup.
Stopping and Starting the Oscillator
The oscillator may be stopped at any time. If the device is going to spend a significant amount of time
on the shelf, the oscillator can be turned off to minimize current drain on the battery. The STOP bit is
located at Bit D7 within the Seconds Register (9h).
Setting it to a ’1' stops the oscillator. When reset to
a ’0', the M48T212A oscillator starts within one second.
Note: It is not necessary to set the WRITE bit when
setting or resetting the FREQUENCY TEST bit (FT)
or the STOP bit (ST).
SETTING ALARM CLOCK REGISTERS
Address locations 6h-2h contain the alarm settings.
The alarm can be configured to go off at a prescribed time on a specific month, date, hour,
minute, or second or repeat every year, month,
day, hour, minute, or second. It can also be programmed to go off while the M48T212A is in the
battery back-up to serve as a system wake-up call.
Bits RPT5-RPT1 put the alarm in the repeat mode
of operation. Table 12 shows the possible configurations. Codes not listed in the table default to the
once per second mode to quickly alert the user of
an incorrect alarm setting.
When the clock information matches the alarm
clock settings based on the match criteria defined
by RPT5-RPT1, the AF (Alarm Flag) is set.
If AFE (Alarm Flag Enable) is also set, the alarm
condition activates the IRQ/FT pin. The IRQ/FT
output is cleared by a read to the Flags register as
shown in Figure 9. A subsequent read of the Flags
register will reset the Alarm Flag (D6; Register 0h).
The IRQ/FT pin can also be activated in the battery
back-up mode. The IRQ/FT will go low if an alarm
occurs and both ABE (Alarm in Battery Back-up
Mode Enable) and AFE are set. The ABE and AFE
bits are reset during power-up, therefore an alarm
generated during power-up will only set AF. The
user can read the Flag Register at system boot-up
to determine if an alarm was generated while the
M48T212A was in the deselect mode during power-up. Figure 10 illustrates the back-up mode alarm
timing.
M48T212A
Figure 10. Back-Up Mode Alarm Waveforms
tREC
VCC
VPFD (max)
VPFD (min)
AFE bit/ABE bit
AF bit in Flags Register
IRQ/FT
HIGH-Z
HIGH-Z
AI03622
WATCHDOG TIMER
The watchdog timer can be used to detect an outof-control microprocessor. The user programs the
watchdog timer by setting the desired amount of
time-out into the Watchdog Register, address 7h.
Bits BMB4-BMB0 store a binary multiplier and the
two lower order bits RB1-RB0 select the resolution, where 00=1/16 second, 01=1/4 second, 10=1
second, and 11=4 seconds. The amount of timeout is then determined to be the multiplication of
the five bit multiplier value with the resolution. (For
example: writing 00001110 in the Watchdog Register = 3*1 or 3 seconds). If the processor does not
reset the timer within the specified period, the
M48T212A sets the WDF (Watchdog Flag) and
generates a watchdog interrupt or a microprocessor reset.
The most significant bit of the Watchdog Register
is the Watchdog Steering Bit (WDS). When set to
a ‘ 0’, the watchdog will activate the IRQ/FT pin
when timed-out. When WDS is set to a ‘ 1’, the
watchdog will output a negative pulse on the RST
pin for 40 to 200 ms. The Watchdog register and
the FT bit will reset to a ‘ 0’ at the end of a Watchdog time-out when the WDS bit is set to a ‘ 1’.
The watchdog timer can be reset by two methods:
1. a transition (high-to-low or low-to-high) can be
applied to the Watchdog Input pin (WDI) or
2. the microprocessor can perform a write of the
Watchdog Register.
The time-out period then starts over. The WDI pin
should be tied to VSS if not used. The watchdog
will be reset on each transition (edge) seen by the
WDI pin. In the order to perform a software reset
of the watchdog timer, the original time-out period
can be written into the Watchdog Register, effectively restarting the count-down cycle.
Should the watchdog timer time-out, and the WDS
bit is programmed to output an interrupt, a value of
00h needs to be written to the Watchdog Register
in order to clear the IRQ/FT pin. This will also disable the watchdog function until it is again programmed correctly. A read of the Flags Register
will reset the Watchdog Flag (Bit D7; Register 0h).
The watchdog function is automatically disabled
upon power-up and the Watchdog Register is
cleared. If the watchdog function is set to output to
the IRQ/FT pin and the frequency test function is
activated, the watchdog function prevails and the
frequency test function is denied.
13/20
M48T212A
VCC SWITCH OUTPUT
Vccsw output goes low when VOUT switches to
VCC turning on a customer supplied P-Channel
MOSFET (see Figure 3). The Motorola
MTD20P06HDL is recommended. This MOSFET
in turn connects V OUT to a separate supply when
the current requirement is greater than IOUT1 (see
Table 7). This output may also be used simply to
indicate the status of the internal battery switchover comparator, which controls the source (VCC or
battery) of the V OUT output.
POWER-ON RESET
The M48T212A continuously monitors V CC. When
VCC falls to the power fail detect trip point, the RST
pulls low (open drain) and remains low on powerup for 40 to 200ms after VCC passes VPFD. The
RST pin is an open drain output and an appropriate pull-up resistor to V CC should be chosen to
control rise time.
Note: If the RST output is fed back into either of
the RSTIN inputs (for a microprocessor with a bidirectional reset) then a 1kΩ (max) pull-up resistor
is recommended.
Reset Inputs (RSTIN1 & RSTIN2)
The M48T212A provides two independent inputs
which can generate an output reset. The duration
and function of these resets is identical to a reset
generated by a power cycle. Table 14 and Figure
12 illustrate the AC reset characteristics of this
function. During the time RST is enabled (tR1HRH
& tR2HRH), the Reset Inputs are ignored.
Note: RSTIN1 and RSTIN2 are each internally
pulled up to VCC through a 100KΩ resistor.
Calibrating the Clock
The M48T212A is driven by a quartz controlled oscillator with a nominal frequency of 32,768 Hz. The
devices are tested not to exceed ±35 ppm (parts
per million) oscillator frequency error at 25°C,
which equates to about ±1.53 minutes per month.
When the Calibration circuit is properly employed,
accuracy improves to better than +1/–2 ppm at
25°C.
The oscillation rate of crystals changes with temperature. The M48T212A design employs periodic
counter correction. The calibration circuit adds or
subtracts counts from the oscillator divider circuit
at the divide by 256 stage, as shown in Figure 11.
The number of times pulses which are blanked
(subtracted, negative calibration) or split (added,
positive calibration) depends upon the value loaded into the five Calibration bits found in the Control
Register. Adding counts speeds the clock up, subtracting counts slows the clock down.
The Calibration bits occupy the five lower order
bits (D4-D0) in the Control Register 8h. These bits
can be set to represent any value between 0 and
14/20
31 in binary form. Bit D5 is a Sign bit; ’1’ indicates
positive calibration, ’0’ indicates negative calibration. Calibration occurs within a 64 minute cycle.
The first 62 minutes in the cycle may, once per
minute, have one second either shortened by 128
or lengthened by 256 oscillator cycles.
If a binary ’1' is loaded into the register, only the
first 2 minutes in the 64 minute cycle will be modified; if a binary 6 is loaded, the first 12 will be affected, and so on.
Therefore, each calibration step has the effect of
adding 512 or subtracting 256 oscillator cycles for
every 125,829,120 actual oscillator cycles, that is
+4.068 or –2.034 ppm of adjustment per calibration step in the calibration register. Assuming that
the oscillator is running at exactly 32,768 Hz, each
of the 31 increments in the Calibration byte would
represent +10.7 or –5.35 seconds per month
which corresponds to a total range of +5.5 or –2.75
minutes per month.
Two methods are available for ascertaining how
much calibration a given M48T212A may require.
The first involves setting the clock, letting it run for
a month and comparing it to a known accurate reference and recording deviation over a fixed period
of time. Calibration values, including the number of
seconds lost or gained in a given period, can be
found in Application Note AN934: TIMEKEEPER
Calibration.
This allows the designer to give the end user the
ability to calibrate the clock as the environment requires, even if the final product is packaged in a
non-user serviceable enclosure. The designer
could provide a simple utility that accesses the
Calibration byte.
The second approach is better suited to a manufacturing environment, and involves the use of the
IRQ/FT pin. The pin will toggle at 512Hz, when the
Stop bit (ST, D7 of 9h) is ’0’, the Frequency Test
bit (FT, D6 of Ch) is ’1’, the Alarm Flag Enable bit
(AFE, D7 of 6h) is ’0’, and the Watchdog Steering
bit (WDS, D7 of 7h) is ’1’ or the Watchdog Register
(7h = 0) is reset.
Any deviation from 512 Hz indicates the degree
and direction of oscillator frequency shift at the test
temperature. For example, a reading of
512.010124 Hz would indicate a +20 ppm oscillator frequency error, requiring a –10 (WR001010)
to be loaded into the Calibration Byte for correction. Note that setting or changing the Calibration
Byte does not affect the Frequency test output frequency.
The IRQ/FT pin is an open drain output which requires a pull-up resistor to VCC for proper operation. A 500-10kΩ resistor is recommended in order
to control the rise time. The FT bit is cleared on
power-up.
M48T212A
Table 14. Reset AC Characteristics
(TA = 0 to 70°C; VCC = 3V to 3.6V)
Symbol
Parameter
Min
Max
Unit
tR1 (1)
RSTIN1 Low to RSTIN1 High
200
ns
tR2 (2)
RSTIN2 Low to RSTIN2 High
100
ms
tR1HRH (3)
RSTIN1 High to RST High
40
200
ms
tR2HRH (3)
RSTIN2 High to RST High
40
200
ms
Note: 1. Pulse width less than 50ns will result in no RESET (for noise immunity).
2. Pulse width less than 20ms will result in no RESET (for noise immunity).
3. CL = 5pF (see Figure 4).
Table 15. Crystal Electrical Characteristics (Externally Supplied)
Symbol
Description
Min
Typ
fO
Resonant Frequency
RS
Series Resistance
50
CL
Load Capacitance
12.5
Max
32,768
Unit
kHz
70
kΩ
pF
Note: Load capacitors are integrated within the M48T212A. Circuit board layout considerations for the 32kHz crystal of minimum trace
lengths and isolation from RF generating signals should be taken into account. ST recommends the KDS DT-38 Tuning Fork Type
quartz crystal for all temperature operations. KDS can be contacted at 913-491-6825 or at http://www.kdsj.co.jp for forther information
on this crystal type.
BATTERY LOW WARNING
The M48T212A automatically performs battery
voltage monitoring upon power-up and at factoryprogrammed time intervals of approximately 24
hours. The Battery Low (BL) bit, Bit D4 of Flags
Register 0h, will be asserted if the battery voltage
is found to be less than approximately 2.5V. The
BL bit will remain asserted until completion of battery replacement and subsequent battery low
monitoring tests, either during the next power-up
sequence or the next scheduled 24-hour interval.
If a battery low is generated during a power-up sequence, this indicates that the battery is below approximately 2.5 volts and may not be able to
maintain data integrity in the SRAM. Data should
be considered suspect and verified as correct. A
fresh battery should be installed.
If a battery low indication is generated during the
24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal Vcc is
supplied. In order to insure data integrity during
subsequent periods of battery back-up mode, the
battery should be replaced. The battery should be
replaced with VCC powering the device to avoid
data loss.
The M48T212A only monitors the battery when a
nominal Vcc is applied to the device. Thus applications which require extensive durations in the battery back-up mode should be powered-up
periodically (at least once every few months) in order for this technique to be beneficial.
Additionally, if a battery low is indicated, data integrity should be verified upon power-up via a
checksum or other technique.
Note: Battery Low warning is only valid when using a 3V button cell battery. Use a super capacitor
for back-up supply causes the BL flag to be invalid.
INITIAL POWER-ON DEFAULTS
Upon application of power to the device, the following register bits are set to a ’0' state: WDS,
BMB0-BMB4, RB0-RB1, AFE, ABE, W and FT
(See Table 16).
15/20
M48T212A
Figure 11. Calibration Waveform
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI00594B
Figure 12. RSTIN1 & RSTIN2 Timing Waveforms
RSTIN1
tR1
RSTIN2
tR2
RST (1)
tR1HRH
tR2HRH
AI02642
Note: 1. With pull-up resistor.
Table 16. Default Values
W
R
FT
AFE
ABE
WATCHDOG
Register (1)
Initial Power-up
(Battery Attach for SNAPHAT) (2)
0
0
0
0
0
0
RESET (3)
0
0
0
0
0
0
Power-down (4)
0
1
0
1
1
0
Subsequent Power-up
0
1
0
0
0
0
Condition
Note: 1.
2.
3.
4.
16/20
WDS, BMB0-BMB4, RB0, RB1.
State of other control bits undefined.
State of other control bits remains unchanged.
Assuming these bits set to ‘1’ prior to power-down.
M48T212A
POWER SUPPLY DECOUPLING
AND UNDERSHOOT PROTECTION
Note: ICC transients, including those produced by
output switching, can produce voltage fluctuations, resulting in spikes on the V CC bus. These
transients can be reduced if capacitors are used to
store energy, which stabilizes the VCC bus. The
energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1µF is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate negative voltage spikes on V CC that drive it to values
below V SS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode.
To protect from these voltage spikes, ST recommends connecting a schottky diode from VCC to
VSS (cathode connected to VCC, anode to VSS).
(Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount).
Figure 13. Supply Voltage Protection
VCC
VCC
0.1µF
DEVICE
VSS
AI02169
17/20
M48T212A
Table 17. Ordering Information Scheme
Example:
M48T212A
-85 MH
1
TR
Device Type
M48T
Supply Voltage and Write Protect Voltage
212A = VCC = 3.0V to 3.6V; VPFD = 2.7V to 3.0V
Speed
-85 = 85ns
Package
MH = SOH44
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Shipping Method for SOIC
blank = Tubes
TR = Tape & Reel
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 18. Revision History
Date
Revision Details
October 1999
First Issue
03/01/00
SNAPHAT Battery & Crystal removed
Hardware Hookup scheme changed (Figure 3)
Back-Up Mode Alarm Waveforms changed (Figure 10)
Default Values Table added (Table 16)
SOH44 package silhouette, mechanical drawings and mechanical data changed (Figure 14)
18/20
M48T212A
Table 19. SOH44 - 44 lead Plastic Small Outline SNAPHAT, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
Typ
Min
3.05
Max
0.120
A1
0.05
0.36
0.002
0.014
A2
2.34
2.69
0.092
0.106
B
0.36
0.46
0.014
0.018
C
0.15
0.32
0.006
0.012
D
17.71
18.49
0.697
0.728
E
8.23
8.89
0.324
0.350
–
–
–
–
H
11.51
12.70
0.453
0.500
L
0.41
1.27
0.016
0.050
α
0°
8°
0°
8°
N
44
e
0.81
0.032
44
CP
0.10
0.004
Figure 14. SOH44 - 44 lead Plastic Small Outline SNAPHAT, Package Outline
A2
A
C
B
e
CP
D
N
E
H
A1
α
L
1
SOH-C
Drawing is not to scale.
19/20
M48T212A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
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20/20
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