DMN2010UDZ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS RDS(ON) Max 24V 7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V Features ID TA = +25°C 11.0A 10.8A 10.6A 10.5A 10.0A Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate > 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Mechanical Data Applications Power Management Functions Battery Pack Load Switch Case: U-DFN2535-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) D D U-DFN2535-6 G2 2 G1 D ESD PROTECTED Gate Protection Diode Bottom View S1 Gate Protection Diode S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2010UDZ-7 Notes: Case U-DFN2535-6 Packaging 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2535-6 YYWW INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW Product Summary R11 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 for 2015) WW = Week Code (01 to 53) R11 DMN2010UDZ Document number: DS37730 Rev. 3 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2010UDZ Maximum Ratings (@TA = +25°C, unless otherwise specified.) INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Continuous Drain Current (Note 6) VGS = 4.5V Value 24 ±8 11 9 2 65 34 57 ID IS IDM IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 0.7 184 1.6 78 16.4 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 24 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) 0.3 RDS(ON) - mΩ VSD - 1.5 7 7.8 8.2 9.5 10.5 1.2 V Static Drain-Source On-Resistance 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.5A VGS = 4.0V, ID = 5.5A VGS = 3.7V, ID = 5.5A VGS = 3.1V, ID = 5.5A VGS = 2.5V, ID = 5.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 2,665 323 311 1.1 33.2 3.6 5.6 7.5 20 93 49 - pF pF pF Ω nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 5.5A VDD = 16V, ID = 5.5A, VGS = 4.5V, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2010UDZ Document number: DS37730 Rev. 3 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2010UDZ 20 30.0 VGS=1.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=3.1V VGS=4.5V 15.0 VGS=1.2V 10.0 VGS=1.0V 14 12 10 8 85℃ 6 125℃ 25℃ 2 150℃ -55℃ 0 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS=3.1V VGS=2.5V 0.006 0.005 VGS=4.0V VGS=4.5V 0.004 0.003 0.002 0.012 125℃ 0.01 150℃ 0.008 85℃ 25℃ 0.006 -55℃ 0.004 0.002 0 2.5 3 0.07 0.06 0.05 0.04 0.03 ID=5.5A 0.02 0.01 0 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature Document number: DS37730 Rev. 3 - 2 2 0.08 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage DMN2010UDZ 1.5 0.09 2 VGS= 4.5V 1 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 0.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.008 0.007 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 16 4 VGS=0.9V 5.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW VGS=2.5V 20.0 VDS= 5V 18 25.0 3 of 7 www.diodes.com 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 1.6 VGS=2.5V, ID=5.5A 1.4 1.2 VGS=4.5V, ID=10A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Temperature May 2015 © Diodes Incorporated VGS=2.5V, ID=5.5A 0.01 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.015 VGS=4.5V, ID=10A 0.005 0.9 0.8 0.7 0.6 0.5 0.4 ID=1mA 0.3 0.2 ID=250μA 0.1 0 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 -25 1000000 150℃ IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 100000 15 VGS=0V, TA=150℃ VGS=0V, TA=125℃ 10 VGS=0V, TA=85℃ 5 VGS=0V, TA=25℃ VGS=0V, TA=-55℃ 125℃ 10000 85℃ 1000 100 25℃ 10 0 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 4 6 8 10 12 14 16 18 20 22 24 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 10000 2 8 f=1MHz f=1MHz Ciss 6 1000 Coss 100 VGS (V) CT, JUNCTION CAPACITANCE (pF) INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW DMN2010UDZ 4 VDS=10V, ID=5.5A Crss 2 10 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMN2010UDZ Document number: DS37730 Rev. 3 - 2 20 0 10 20 30 40 50 60 Qg - TOTAL GATE CHARGE (nC) Figure 12. Gate Charge 4 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2010UDZ 100 PW =100μs ID, DRAIN CURRENT (A) INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW RDS(ON) Limited 10 PW = 1ms PW =10ms 1 PW =100ms 0.1 TJ(MAX)=150℃ TA=25℃ PW =1s Single Pulse PW =10s DUT on 1*MRP board DC VGS=4.5V 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=184℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMN2010UDZ Document number: DS37730 Rev. 3 - 2 5 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2010UDZ Package Outline Dimensions INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A3 A Seating Plane D A1 e1 L(X6) e R0. (P 150 in # 1 ID ) E E2 D2 U-DFN2535-6 (Type B) Dim Min Max Typ A 0.50 0.60 A1 0.00 0.05 0.02 A3 0.127 b 0.25 0.35 0.30 b2 1.05 1.15 1.10 D 2.45 2.55 2.50 D2 2.01 2.21 2.11 E 3.45 3.55 3.50 E2 2.20 2.40 2.30 e 0.55 e1 0.95 L 0.25 0.35 0.30 z 0.15 All Dimensions in mm b z b2 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 X X2 Dimensions C C1 X X1 X2 Y Y1 Y1 Y C1 DMN2010UDZ Document number: DS37730 Rev. 3 - 2 Value (in mm) 0.550 0.950 0.400 1.200 2.210 0.500 2.400 C 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2010UDZ INFORMATION ADVANCE INFORMATION ADVANCED PRODUCT NEW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN2010UDZ Document number: DS37730 Rev. 3 - 2 7 of 7 www.diodes.com May 2015 © Diodes Incorporated