AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
l
Dynamic dV/dT Rating
l
l
l
175°C Operating Temperature
Fast Switching
l
Fully Avalanche Rated
l
l
l
l
AUIRF5210S
HEXFET® Power MOSFET
D
G
V(BR)DSS
-100V
RDS(on) max.
60m
ID
S
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
-38A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
G
D
S
D2Pak
AUIRF5210S
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Units
-38
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Parameter
IDM
Pulsed Drain Current
-140
PD @TA = 25°C
Maximum Power Dissipation
3.1
PD @TC = 25°C
Maximum Power Dissipation
170
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1.3
± 20
W/°C
V
120
mJ
ID @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
-24
c
c
d
c
Peak Diode Recovery dv/dt e
-23
A
17
mJ
-7.4
-55 to + 150
V/ns
°C
Repetitive Avalanche Energy
Operating Junction and
W
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
h
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (PCB Mount, steady state)
g
Typ.
Max.
Units
–––
0.75
°C/W
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/20/2012
AUIRF5210S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
V(BR)DSS
VDSS/ TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
–––
–––
-2.0
9.5
–––
–––
–––
–––
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
60
-4.0
–––
-50
-250
100
-100
Conditions
V
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
m VGS = 10V, ID = -38A
V
VDS = VGS , ID = -250μA
VDS = -50V, ID = -23A
S
μA VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, T J = 125°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
4.5
230
33
120
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2780
800
430
–––
–––
–––
nC
ns
nH
Conditions
ID = -23A
VDS = -80V
VGS = -10V
VDD = -50V
ID = -23A
RG = 2.4
VGS = -10V
Between lead,
f
f
6mm (0.25in.)
from package
pF
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Min.
Typ. Max. Units
IS
Continuous Source Current
Parameter
–––
–––
-38
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-140
VSD
(Body Diode)
Diode Forward Voltage
trr
Q rr
ton
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
170
1180
-1.6
260
1770
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting TJ = 25°C, L = 0.46mH
RG = 25, I AS = -23A. (See Figure 12)
ISD -23A, di/dt -650A/µs, VDD V(BR)DSS,
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
V
ns
nC
T J = 25°C, IS = -23A, VGS = 0V
f
T J = 25°C, IF = -23A, VDD = -25V
di/dt = -100A/μs
f
Intrins ic turn-on time is negligible (turn-on is dominatedby LS +LD)
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C
TJ 150°C.
2
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08/20/2012
AUIRF5210S
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D2Pak
MSL1
Machine Model
Class M4 (+/- 425V )††
Human Body Model
Class H2 (+/- 4000V )††
AEC-Q101-002
ESD
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V )††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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3
08/20/2012
AUIRF5210S
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
-4.5V
1
60μs PULSE WIDTH
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
1
60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1000
T J = 25°C
100
T J = 150°C
10
1
VDS = -50V
60μs PULSE WIDTH
ID = -38A
VGS = -10V
1.5
1.0
0.5
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
2
4
6
8
10
12
14
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
vs. Temperature
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08/20/2012
AUIRF5210S
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-V GS, Gate-to-Source Voltage (V)
ID= -23A
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
VDS= -80V
VDS= -50V
10.0
VDS= -20V
8.0
6.0
4.0
2.0
100
0.0
1
10
100
0
-VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
25
100
T J = 150°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
100μsec
10
VGS = 0V
0.1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1.8
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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08/20/2012
AUIRF5210S
RD
VDS
40
VGS
35
D.U.T.
RG
-
+
-I D, Drain Current (A)
30
VDD
-10V
25
Pulse Width µs
Duty Factor
20
15
Fig 10a. Switching Time Test Circuit
10
5
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
10%
150
T C , Case Temperature (°C)
90%
VDS
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
J
0.05
R1
R1
J
1
0.02
1
2
2
1E-005
0.0001
Ri (°C/W)
3
3
(sec)
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R3
R3
C
Ci= iRi
Ci= iRi
0.01
0.01
R2
R2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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08/20/2012
AUIRF5210S
L
IAS
-20V
500
D.U.T
RG
tp
VDD
A
DRIVER
0.01
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
TOP
-8.7A
-14A
BOTTOM -23A
450
400
350
300
250
200
150
100
50
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50K
QG
-10V
QGS
.2F
.3F
QGD
+VDS
D.U.T.
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
www.irf.com
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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08/20/2012
AUIRF5210S
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
-
-
+
+
RG
V GS
*
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
] ***
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
ISD
Ripple 5%
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 15. For P-Channel HEXFETS
8
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08/20/2012
AUIRF5210S
D2Pak Package Outline
(Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF5210S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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08/20/2012
AUIRF5210S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
10
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
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08/20/2012
AUIRF5210S
Ordering Information
Base part
number
Package Type
AUIRF5210S
D2Pak
www.irf.com
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRF5210S
AUIRF5210STRL
AUIRF5210STRR
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08/20/2012
AUIRF5210S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
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of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
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that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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