Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 1/7 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4401A3 Description • The BTC4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , IC = 0.6A • Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA Optimal for low Voltage operation • Complementary to BTA4403A3. • Pb-free package Symbol Outline BTC4401A3 TO-92 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC4401A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 75 50 6 0.6 625 150 -55~+150 V V V A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(ON) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 75 50 6 100 120 120 40 - Typ. 0.2 230 9.3 Max. 10 100 50 0.3 0.45 0.95 1.2 1 240 240 - Unit V V V nA nA nA V V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=60V VCE=60V, VBE=-0.4V VEB=5V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=20mA VCE=2V, IC=0.1mA VCE=2V, IC=1mA VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank A B1 B2 C Range 120~175 165~195 185~225 215~240 Ordering Information Device BTC4401A3, bulk BTC4401A3, T/B BTC4401A3 Package TO-92 (Pb-free lead plating package) TO-92 (Pb-free lead plating package) Shipping 1000 pcs/ bag, 10 bags/box, 10boxes/carton 2000 pcs / Tape & Box CYStek Product Specification Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.7 0.15 500uA 400uA 300uA 0.1 0.05 5mA 0.6 1mA 0.2 Collector Current---IC(A) Collector Current---IC(A) 0.25 200uA IB=100uA 0 0.5 0.4 2.5mA 2mA 0.3 1.5mA 0.2 1mA 0.1 IB=500uA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 Ta=125°C Current Gain---HFE Current Gain---HFE Ta=125°C 100 Ta=75°C Ta=25°C 100 Ta=25°C Ta=75°C VCE=2V VCE=1V 10 10 1 10 100 Collector Current---IC(mA) 1 1000 Current Gain vs Collector Current 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 1000 1000 Ta=125°C VCESAT=10IB Saturation Voltage---(mV) Current Gain---HFE 6 100 Ta=25°C Ta=75°C 100 125°C 75°C 25°C VCE=10V 10 10 1 BTC4401A3 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VBESAT@IC=10IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=20IB 100 125°C 75°C 25°C Ta=75°C Ta=25°C 1000 125°C 100 10 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) 1000 Capacitance vs Reverse-biased Voltage On Voltage vs Collector Current 100 10000 VBEON@VCE=10V 75°C Capacitance---(pF) On Voltage---(mV) Cib 25°C 1000 10 Cob 125°C 100 1 1 10 100 Collector Current---IC(mA) 1000 0.1 Transition Frequency vs Collector Current 100 Power Derating Curve 1000 700 VCE=5V Power Dissipation---PD(mW) Transition Frequency---fT(MHz) 1 10 Reverse-biased Voltage---VR(V) 100 600 500 400 300 200 100 10 0 1 BTC4401A3 10 100 Collector Current---IC(mA) 1000 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 5/7 CYStech Electronics Corp. TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTC4401A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC4401A3 CYStek Product Specification Spec. No. : C203A3 Issued Date : 2007.10.16 Revised Date :2012.03.12 Page No. : 7/7 CYStech Electronics Corp. TO-92 Dimension Marking: α2 A B 1 2 3 Date Code C4401 □□ α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4401A3 CYStek Product Specification