SFF130/3 & SFF130/66 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 14 AMP / 100 Volts 0.18 Ω N-Channel Power MOSFET Part Number / Ordering Information 1/ SFF130 __ __ │ └ Screening 2/ │ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ Package │ └ /3= TO-3 Features: • • • • • • • • • • • Rugged Construction with Poly Silicon Gate Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package Available in both hot case and isolated versions Ideal for low power applications TX, TXV, Space Level Screening Available 2/ • Replacement for IRFF130 & 2N6756 Types /66= TO-66 TO-66 TO-3 Maximum Ratings 3/ Symbol Value Units Drain – Source Voltage VDS 100 Volts Gate – Source Voltage VGS ±20 Volts TC = 25ºC TC = 100ºC ID 14 9 Amps TC = 25ºC TA = 25ºC PD 25 19 Watts Top & Tstg -55 to +150 ºC Thermal Resistance Junction to Case RθJC 5 ºC/W Single Pulse Avalanche Energy EAS 75 mJ Repetitive Avalanche Energy EAR 7.5 mJ Continuous Collector Current Power Dissipation Operating & Storage Temperature TO-66 TO-3 .165 2x Ø.151 .135 MAX .675 .655 .525 MAX 2x R.188 MAX SEATING PLANE 2x .043 .038 Ø.875 MAX 2 .440 .420 .450 .250 2x .225 .205 2x .312 MIN 1 1.197 1.177 NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500/542. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00307B DOC SFF130/3 & SFF130/66 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units BVDSS 100 –– –– Volts ΔBVDSS ΔTj –– 130 –– mV/ ºC RDS(on) –– 0.13 0.14 0.18 0.21 Ω VGS(th) 2.0 2.8 4.0 V gfs 4.6 7 –– mho IDSS –– –– –– –– 25 250 μA At rated VGS IGSS –– –– –– –– +100 -100 nA VGS=10 Volts 50% rated VDS Rated ID VDD=50% Rated VDS 50% rated ID RG= 7.5Ω Qg Qgs Qgd 12 1.5 5 17 3.7 7.0 35 10 20 nC td(on) tr td(off) tf –– –– –– –– 9.5 42 22 25 35 80 60 45 nsec VSD –– 1 1.5 V trr QRR –– –– 120 0.58 300 3 nsec μC Ciss Coss Crss –– –– –– 650 250 44 –– –– –– pF Drain to Source Breakdown Voltage (VGS=0 V, ID=250 μA) Temperature Coefficient of Breakdown Voltage Drain to Source On State Resistance ID=9A ID=14A (VGS=10 V ) Gate Threshold Voltage (VDS=VGS, ID=250 μA ) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A) Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/μsec VGS=0 Volts VDS=25 Volts f=1 MHz For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/3; SFF130/66 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package TO-3 TO-66 Drain Case Case DATA SHEET #: F00307B Source Pin 2 Pin 2 Gate Pin 1 Pin 1 DOC