N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description Features The MDIS5N40 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 400V ID = 3.4A RDS(ON) ≤ 1.6Ω MDIS5N40 is suitable device for SMPS, HID and general purpose applications. @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast MDIS5N40 N-channel MOSFET 400V MDIS5N40 TO-251-VS (IPAK-VS) Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit VDSS 400 V VGSS ±30 V 3.4 A 2.15 A 13.6 A 45 0.36 W W/ oC Dv/dt 4.5 V/ns EAR 4.5 mJ EAS 170 mJ TJ, Tstg -55~150 Drain-Source Voltage Gate-Source Voltage TC=25oC Continuous Drain Current ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation PD Derate above 25 oC Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(1) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range o C Thermal Characteristics Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(1) RθJA 110 Thermal Resistance, Junction-to-Case(1) RθJC 2.75 Feb. 2014. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. Part Number Temp. Range MDIS5N40TH o -55~150 C Package Packing RoHS Status TO-251-VS (IPAK-VS) Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 400 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA 1.2 1.6 Ω - 2.0 - S Drain-Source ON Resistance Forward Transconductance RDS(ON) VGS = 10V, ID = 1.7A gfs VDS = 30V, ID = 1.7A V MDIS5N40 N-channel MOSFET 400V Ordering Information Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs VDS = 320V, ID = 3.4A, VGS = 10V - 9 - 2.5 Gate-Drain Charge Qgd - 4 Input Capacitance Ciss - 290 Reverse Transfer Capacitance Crss - 3 Output Capacitance Coss - 46 Turn-On td(on) - 12 tr - 25 - 20 - 30 - 3.4 Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 200V, ID = 3.4A, RG = 25Ω tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source IS Diode Forward Current Source-Drain Diode Forward VSD Voltage Body Diode Reverse Recovery trr Time Body Diode Reverse Recovery Qrr Charge IS = 3.4A, VGS = 0V - nC pF ns - A 1.4 V - 200 ns - 1.0 μC IF = 3.4A, di/dt = 100A/μs Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤3.4A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25°C 4. L=25.8mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C Feb. 2014. Version 1.1 2 MagnaChip Semiconductor Ltd. 3.4 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V ID,Drain Current [A] 8 7 3.2 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 3.0 2.8 2.6 RDS(ON) [Ω ] 9 6 5 4 2.4 2.2 VGS=10.0V 2.0 VGS=20V 1.8 3 1.6 2 1.4 1.2 1 1.0 5 10 15 20 0 5 VDS,Drain-Source Voltage [V] ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 10 MDIS5N40 N-channel MOSFET 400V 10 1. VGS = 10 V 2. ID = 6.0 A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 200 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 10 ※ Notes : 10 IDR Reverse Drain Current [A] ID [A] * Notes ; 1. VDS=30V 150℃ 25℃ 6 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Feb. 2014. Version 1.1 25℃ 150℃ 1 0.1 0.0 1 4 1. VGS = 0 V 2. 250us pulse Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDIS5N40 N-channel MOSFET 400V 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss ※ Note : ID = 5A 10 80V 500 VGS, Gate-Source Voltage [V] 200V 320V Capacitance [pF] 8 6 4 400 Ciss 300 ※ Notes ; 200 1. VGS = 0 V 2. f = 1 MHz Crss 2 100 0 0 0 2 4 6 1 8 Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 5 10 s 100 s 1 ms 1 4 ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 100 ms 10 10 0 DC -1 -2 10 -1 2 1 Single Pulse TJ=Max rated TC=25℃ 10 3 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 5000 single Pulse RthJC = 2.75℃/W TC = 25℃ D=0.5 4000 0 0.2 0.1 Power (W) Zθ JC(t), Thermal Response 10 0.05 -1 0.02 10 0.01 ※ Notes : single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Feb. 2014. Version 1.1 2000 1000 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.75℃/W -2 10 3000 4 MagnaChip Semiconductor Ltd. TO-251-VS (IPAK-VS) Dimensions are in millimeters, unless otherwise specified Feb. 2014. Version 1.1 5 MDIS5N40 N-channel MOSFET 400V Physical Dimension MagnaChip Semiconductor Ltd. MDIS5N40 N-channel MOSFET 400V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 2014. Version 1.1 6 MagnaChip Semiconductor Ltd.