CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTN2572E3 BVDSS ID RDS(ON) Features 150V 44A 33mΩ(typ.) • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Symbol Outline TO-220 MTN2572E3 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Operating Junction and Storage Temperature VDS VGS ID ID IDM IAS EAS EAR 150 ±30 44 31 120 18 20 10 156 78 -55~+175 MTN2572E3 PD Tj, Tstg Unit V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 2/7 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.96 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 150 1.5 - 0.1 2.8 34 33 4.0 ±100 1 25 50 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±30 VDS =120V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=20A 30 10 8 13 12 47 20 2249 225 118 2 - 120 380 36 120 1.3 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC ID=20A, VDS=80V, VGS=10V ns VDS=75V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=25A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device Package Shipping TO-220 50 pcs/tube, 20 tubes/box, MTN2572E3-0-UB-S (Pb-free lead plating and RoHS compliant package) 4 boxes / carton MTN2572E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 3/7 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 160 ID, Drain Current(A) 5V,6V,7V,8V,9V,10V 120 VGS=4V 80 VGS=3V 40 1.2 1 0.8 0.6 VGS=2V 0.4 -100 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) ID=250μA, VGS=0V 10 Static Drain-Source On-State resistance vs Drain Current 200 1.2 VGS=4.5V 5V 6V 7V 8V 9V 10V 100 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 0 50 100 150 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) -50 90 ID=20A 80 70 60 50 40 30 20 10 VGS=10V, ID=20A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 33 mΩ 0.4 0 0 MTN2572E3 4 8 12 16 VGS, Gate-Source Voltage(V) 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=80V ID=20A 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 Maximum Safe Operating Area 5 10 15 20 25 30 Total Gate Charge---Qg(nC) 35 40 Typical Transfer Characteristics 1000 160 VDS=10V 140 100 100μs RDS(ON) Limit ID, Drain Current (A) ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 1ms 10ms 10 100ms 1s 1 TC=25°C, Tj=150°, VGS=10V RθJC=0.96C/W, Single Pulse DC 120 100 80 60 40 20 0 0.1 0.1 MTN2572E3 1 10 100 VDS, Drain-Source Voltage(V) 1000 0 2 4 6 8 VGS , Gate-Source Voltage(V) 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 5/7 Typical Characteristics(Cont.) Maximum Drain Current vs Case Temperature 50 ID, Maximum Drain Current(A) 45 40 35 30 25 20 15 10 VGS=10V, RθJC=0.96°C/W 5 0 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 Transient Thermal Response Curves 1 D=0.5 ZθJC(t), Thermal Response 0.2 1.ZθJC(t)=0.96C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN2572E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2572E3 CYStek Product Specification Spec. No. : C434E3 Issued Date : 2012.12.04 Revised Date : Page No. : 7/7 CYStech Electronics Corp. TO-220 Dimension Marking: A B D E C Device Name Date Code H M I K CYS 2572 □□□□ 1 2 3 3 G N 2 1 4 P O 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2572E3 CYStek Product Specification