Single N-channel Trench MOSFET 100V, 60A, 4.8mΩ General Description Features The MDF1921 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1921 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. VDS = 100V ID = 60A @VGS = 10V RDS(ON) < 4.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G S TO-220F Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 100 V VGSS ±20 V o TC=25 C Continuous Drain Current (1) 60 ID o TC=100 C 38 Pulsed Drain Current IDM o TC=25 C Power Dissipation A 240 36 PD TC=100oC W 15 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 200 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 3.5 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Mar. 2014. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF1921– Single N-Channel Trench MOSFET 100V MDF1921 Part Number Temp. Range Package Packing RoHS Status MDF1921TH -55~150oC TO-220F Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.9 4.0 V Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 4.5 4.8 mΩ gfs VDS = 10V, ID = 50A - 120 - S - 100 - - 27 - - 26 - - 6750 - - 50 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50V, ID = 50A, VGS = 10V VDS = 40V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss Output Capacitance Coss - 1300 - Turn-On Delay Time td(on) - 30.4 - - 28.8 - - 93.0 - - 34.2 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 2.5 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr - 73 ns Body Diode Reverse Recovery Charge Qrr - 150 nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1 mH, IAS = 20 A, VGS = 10V. Mar. 2014. Version 1.1 2 MagnaChip Semiconductor Ltd. MDF1921– Single N-Channel Trench MOSFET 100V Ordering Information Drain-Source On-Resistance [mΩ] 6.0V 180 7.0V ID, Drain Current [A] 160 8.0V 140 5.0V VGS = 10V 120 100 80 4.5V 60 40 4.7 4.6 VGS = 10V 4.5 4.4 4.0V 20 4.3 0 0 0 1 2 3 4 50 5 100 150 VDS, Drain-Source Voltage [V] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 20 ※ Notes : ※ Notes : 18 RDS(ON) [mΩ ], Drain-Source On-Resistance 1. VGS = 10 V 2. ID = 10 A RDS(ON), (Normalized) Drain-Source On-Resistance 200 ID, Drain Current [A] 2.0 1.5 1.0 0.5 ID = 50A 16 14 12 10 TA = 25℃ 8 6 4 2 0.0 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 100 ※ Notes : ※ Notes : 90 100 IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 80 70 60 TA=25℃ 50 40 30 20 VGS = 0V 10 TA=25℃ 1 10 0 0 1 2 3 4 5 6 7 0.0 8 Fig.5 Transfer Characteristics Mar. 2014. Version 1.1 0.3 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF1921– Single N-Channel Trench MOSFET 100V 4.8 200 ※ Note : ID = 50A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 50V Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss 8000 8 6 4 6000 ? Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 4000 2000 Crss 2 0 0 0 0 10 20 30 40 50 60 70 80 90 5 10 100 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 80 70 10 2 ID, Drain Current [A] ID, Drain Current [A] 60 100 us 10 Operation in This Area is Limited by R DS(on) 1 1 ms 10 ms 10 0 100 ms 10 -1 10 0 10 1 10 30 10 -1 10 40 20 1s DC Single Pulse TJ=Max rated TC=25℃ 50 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 Zθ JA(t), Thermal Response D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 0.01 -2 10 ※ Notes : single pulse -3 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Mar. 2014. Version 1.1 4 MagnaChip Semiconductor Ltd. MDF1921– Single N-Channel Trench MOSFET 100V 10000 10 MDF1921– Single N-Channel Trench MOSFET 100V Package Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Mar. 2014. Version 1.1 5 MagnaChip Semiconductor Ltd. MDF1921– Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2014. Version 1.1 6 MagnaChip Semiconductor Ltd.