<^£.mL-C.onaactoi ^Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MJE205 (SILICON) MJE205K MEDIUM-POWER NPN SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. NPN SILICON • High DC Current Gain -hpE " 25-100@lc • Thermopad High-Efficiency Compact Package SO VOLTS 66 WATTS •Complementary to PNP MJE 105, MJE105K •Choice of Packages - MJE205-Case 90 MJE205K-Case 199 MAXIMUM RATINGS Rating Collector-Emitter Voltage CollKtor-BaM Voltage Em. Hot-Bin Voltage Collector Currant flaw Currant Total Dnict Diuipation STc-25°C Otrtlt above 25°C Operating and Storage Junction Temperature Range Symbol Value Unit vceo VCB VEB ic SO Vdc SO 4.0 Vdc 5.0 Adc 'B 2.5 Adc "ot 65 0.522 -55 to +150 w/°c °c TJ.T,tB Vdc VVMtl CASE 90-05 THERMAL CHARACTERISTICS Ctiaracterittlc Thermal Reiiitance, Junction to Case MJE 205 Symbol Max Unit »JC 1.92 °C/W tSaf* Ar«« Curwt ira indicated by Fiflure 1 . Both Hmltl ar« applicabl* and muff b« obHrwd. MJE2O6K ELECTRICAL CHARACTERISTICS (Tc = 25°C unlan otherwi» noted) Characteristic OFF CHARACTERISTICS Symbol Collector-Emitter Breakdown Voltaget (1C - lOOmAdc, IB -01 Collector Cutoff Current (V CB -50Vdi;. IE -0) (VCB » SO Vdc, IE - 0, TC- 15O°C) Emitter Cutoff Current (vB£ - 4.0 vdc, ic - 01 BVCEOt | Min Mix Unit Vdc so mAdc 'C80 - IEBO 0.1 2.0 niAdc _ 1.0 25 100 - 1.2 CASE 199-04 ON CHARACTERISTICS DC Current Gain |lc - 2.0 Adc, Vce - 2.0 Vdcl Bin-Emitter Voltage He • 2.0 Adc, VCE - 2.0 Vdc) HFE - VBE Vdc tPuluTtil: PulHWMth<300M>. Duty Cycle<2.0X. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors MJE205 MJE205K —t-U ff — B-~, M V M T r Q S A ff t U t ^ M 1 Q Ml RIB i: K Jt° -HHcl—- PIN 1. EMITTER 2. COLLECTOR 3 BASE "It DIM | 1 Q R U Mil LiMCTERS MAX Ml 1 INC 4ES MIN MAX ^i±^ mr— MIr" STYL E l : PI 1. BASE 2. COLLECTOR 3. EMITTER [ gMM \—, C DIM MIN MAX INlHES MAX MIN A B 1608 16.33 12.83 0.633 0.643 0.495 U.bllb 0.845 0.505 " 0.125 124 JLS«L 3.76 0.138 0.16 BSC 2.92 0.105 0.135 H 0.864 0.034 0.645 16. 13 12.S7 3. 18 1.09 3.51 4.2 2.E7 0,813 15.11 ^ 16.38 12.10 4.70 191 6.22 4.35 2.16 0.185 0.13S DM U.U8S 6.48 0.245 O.E35 0.496 3.43 16.38 JU-J MILLIMETERS -it 0.032 0.595 Q 0.049 0.14! BSC 0.115 0.255 K 1257 ' 0.51 3.61 2.5- 2B7 043 1473 0.78 3.86 BSC 2.92 069 14.99 1 M 216 2.41 3° YP 147 171 * 0 4.78 S 0.81 6.99 T U — S |LL- ST> It 2: - 6,22 0.020 0.142 0.10 nn 5 O.OM BSC ll,11)i 0.0 7 11.112' 0.580 0.085 O.S9C O.US5 3" 'YP 0.058 nnn 5.03 0.188 O.I3U 6.48 0.032 U.I1M 0.275 11.285 0.245 0.255 N DTE: 1 LEADS WITH IN .005" RAD OF TRUE POSITION (TP)ATMMC 1 . DIM "G" IS TO CENTER LINE OF LEADS. CASE 904>S CASE 199-04