DMN6069SFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary RDS(ON) Max ID Max TC = +25°C 50mΩ @ VGS = 10V 18A 63mΩ @ VGS = 4.5V 16A BVDSS 60V Description and Applications Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters ® Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) D PowerDI3333-8 Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN6069SFGQ-7 DMN6069SFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCED INFORMATION Features and Benefits N69 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) N69 PowerDI is a registered trademark of Diodes Incorporated. DMN6069SFGQ Document number: DS39399 Rev.1 - 2 1 of 8 www.diodes.com December 2016 © Diodes Incorporated DMN6069SFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current (Note 7) VGS = 10V Steady State Steady State TA = +25°C TA = +70°C TC = +25°C TC = +70°C Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current (Note 8) L = 0.1mH Repetitive Avalanche Energy (Note 8) L = 0.1mH ID Value 60 ±20 5.6 4.5 Unit V V ID 18 14.5 A IDM IS IAS EAS 25 2.5 12 7.2 A A A mJ A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State t<10s Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: RθJA RθJA RθJC TJ, TSTG Value 0.93 134 82 2.4 53 33 5 -55 to +150 Unit W °C/W W °C/W °C 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. DMN6069SFGQ Document number: DS39399 Rev.1 - 2 2 of 8 www.diodes.com December 2016 © Diodes Incorporated DMN6069SFGQ ADVANCED INFORMATION Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Zero Gate Voltage Drain Current TJ = +150°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IDSS IGSS 60 — — — — — — — — 1 100 ±100 V µA µA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 39 47 — — 3 50 63 1.1 — V Static Drain-Source On-Resistance 1 — — — 20 VDS = VGS, ID = 250μA VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3A VGS = 0V, IS = 2.5A VDS ≧5V, VGS = 10V 740 40 28 1,480 80 55 2.2 6.4 14 2.8 2.3 3.6 5.0 12 3.3 11 Diode Forward Voltage On State Drain Current (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance VSD ID(ON) Gate Resistance Rg — — — — Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qg Qgs Qgd — — — — tD(ON) tR tD(OFF) tF tRR — — — — — — Notes: Ciss Coss Crss QRR 5.1 mΩ V A Test Condition pF pF pF VDS = 30V, VGS = 0V, f = 1.0MHz 4 Ω VDS = 0V, VGS = 0V, f = 1MHz 12 25 5.5 5 10 10 24 10 22 10 nC nC nC nC ns ns ns ns ns nC VDS = 30V, ID = 12A VDS = 30V, ID = 12A VGS = 10V, RG = 6.0Ω IF = 4.5A, di/dt = 100A/μs 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMN6069SFGQ Document number: DS39399 Rev.1 - 2 3 of 8 www.diodes.com December 2016 © Diodes Incorporated DMN6069SFGQ 20 20.0 VGS=4.5V 10.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS= 10V VGS=5.0V 15.0 VGS=3.5V 5.0 15 10 TA=-55℃ TA=25℃ TA=85℃ 5 TA=125℃ VGS=3.0V TA=150℃ 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0 0.1 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 4 0.16 0.08 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS= 4.5V VGS=4.5V 0.04 VGS=10V 0.02 0.12 TA=150℃ TA=125℃ 0.08 TA=85℃ TA=25℃ 0.04 TA=-55℃ 0 0 0 5 10 15 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS=10V, ID=12A 1.6 1.2 VGS=5V, ID=5A 0.8 0.4 -50 -25 0 25 50 75 100 125 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION VGS=10V 150 0.1 0.08 VGS=5V, ID=5A 0.06 0.04 VGS=10V, ID=12A 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature Document number: DS39399 Rev.1 - 2 10 15 20 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Temperature 0.12 TJ, JUNCTION TEMPERATURE (℃) DMN6069SFGQ 5 4 of 8 www.diodes.com Figure 6. On-Resistance Variation with Temperature December 2016 © Diodes Incorporated DMN6069SFGQ 20 2.5 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS=0V ID=1mA 2 1.5 ID=250µA 1 15 10 TA=-55℃ TA=25℃ TA=85℃ 5 TA=125℃ 0.5 TA=150℃ 0 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. JunctionTemperature 150 0 10000 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 10 1000 8 150℃ 7 125℃ 100 VGS (V) IDSS, LEAKAGE CURRENT (nA) 9 10 6 5 4 85℃ VDS=30V, ID=12A 3 1 2 25℃ 1 0.1 0 0 10 20 30 40 50 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Drain-Source Leakage Current vs. Voltage 0 2 4 6 8 10 12 Qg (nC) Figure 10. Gate Charge 14 16 100 10000 RDS(ON) LIMITED ID, DRAIN CURRENT (A) f=1MHz CT, JUNCTION CAPACITANCE (pF) ADVANCED INFORMATION 3 1000 Ciss 100 Coss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMN6069SFGQ Document number: DS39399 Rev.1 - 2 PW =1ms 1 PW =100ms PW =1s 0.1 0.01 0 PW =10ms 10 Crss 10 PW =100µs 40 5 of 8 www.diodes.com TJ(Max)=150℃ TA=25℃ PW =10s Single Pulse DUT on 1*MRP board VGS=10V 0.1 DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 December 2016 © Diodes Incorporated DMN6069SFGQ 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t)=r(t) * RθJA RθJA=134℃/W Duty Cycle, D=t1/t2 D=0.005 D=Single Pulse 0.001 0.0001 DMN6069SFGQ Document number: DS39399 Rev.1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 6 of 8 www.diodes.com 10 100 1000 December 2016 © Diodes Incorporated DMN6069SFGQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCED INFORMATION PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X DMN6069SFGQ Document number: DS39399 Rev.1 - 2 C 7 of 8 www.diodes.com December 2016 © Diodes Incorporated DMN6069SFGQ IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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