ON NTSA4100T3G Schottky rectif Datasheet

NTSA4100, NRVTSA4100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRVTSA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
Typical Applications
TH41
AYWWG
• Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
TH41
A
Y
WW
G
(Note: Microdot may be in either location)
Mechanical Characteristics:
•
•
•
•
•
ORDERING INFORMATION
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Device
Package
Shipping†
NTSA4100T3G
SMA
(Pb−Free)
5000 /
Tape & Reel
NRVTSA4100T3G
SMA
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTSA4100/D
NTSA4100, NRVTSA4100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
100
Average Rectified Forward Current
(TL = 118°C)
IF(AV)
4.0
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 110°C)
IFRM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
ESD Rating (Human Body Model)
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJL
−
16.2
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJA
−
90
°C/W
0.43
0.59
−
0.66
0.35
0.53
−
0.58
1.3
0.13
25
9
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
vF
(iF = 1.0 A, TJ = 125°C)
(iF = 4.0 A, TJ = 125°C)
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
V
mA
mA
pF
54.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 125°C
TA = 85°C
1
TA = 25°C
TA = −55°C
0.1
0.2
0.4
0.6
0.8
TA = 25°C
TA = −55°C
0
0.4
0.2
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
TA = 150°C
1.E−03
TA = 125°C
1.E−03
TA = 85°C
TA = 85°C
1.E−04
1.E−05
TA = 25°C
1.E−06
TA = 150°C
1.E−02
TA = 125°C
1.E−04
1.E−05
TA = 25°C
1.E−06
20
30
40
50
60
70
80
90 100
10
20
40
30
50
60
70
80
90
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−02
TJ = 25°C
100
10
0.1
TA = 125°C
TA = 85°C
1.0
1.E−01
1.E−07
10
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
TA = 150°C
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
8
7
DC
6
5
Square Wave
4
3
2
RqJL = 16.2°C/W
1
0
0
20
40
60
80
100
120
VR, REVERSE VOLTAGE (V)
TC, LEAD TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
100
140
NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
7
IPK/IAV
= 20
IPK/IAV = 10
IPK/IAV = 5
6
5
4
Square Wave
3
DC
2
1
0
0
1
3
2
4
5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1000
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
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4
100
1000
NTSA4100, NRVTSA4100
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
A
L
A1
c
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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5
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For additional information, please contact your local
Sales Representative
NTSA4100/D
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