CY15B102Q
2-Mbit (256 K × 8) Serial (SPI) Automotive
F-RAM
2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM
Features
■
Functional Overview
2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K × 8
13
❐ High-endurance 10 trillion (10 ) read/writes
❐ 121-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■
Very fast serial peripheral interface (SPI)
❐ Up to 25 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■
Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■
Device ID
❐ Manufacturer ID and Product ID
■
Low power consumption
❐ 5 mA active current at 25 MHz
❐ 750 A standby current
❐ 20 A sleep mode current
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Automotive-E temperature: –40 C to +125 C
■
8-pin small outline integrated circuit (SOIC) package
■
AEC Q100 Grade 1 compliant
■
Restriction of hazardous substances (RoHS) compliant
The CY15B102Q is a 2-Mbit nonvolatile memory employing an
advanced ferroelectric process. F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 121 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B102Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15B102Q is capable of supporting
1013 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the CY15B102Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B102Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B102Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
Automotive-E temperature range of –40 C to +125 C.
Logic Block Diagram
WP
Instruction Decoder
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
256 K x 8
F-RAM Array
Instruction Register
18
Address Register
Counter
SI
8
Data I/O Register
SO
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-89166 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 20, 2017
CY15B102Q
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Overview............................................................................ 4
Memory Architecture........................................................ 4
Serial Peripheral Interface - SPI Bus .............................. 4
SPI Overview............................................................... 4
SPI Modes................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register..................................... 7
WRSR - Write Status Register .................................... 7
Memory Operation............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
Fast Read Operation ................................................... 8
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Device ID................................................................... 11
Endurance ................................................................. 11
Maximum Ratings........................................................... 12
Operating Range............................................................. 12
Document Number: 001-89166 Rev. *F
DC Electrical Characteristics ........................................
Data Retention and Endurance .....................................
Example of an F-RAM Life Time in an
AEC-Q100 Automotive Application...............................
Capacitance ....................................................................
Thermal Resistance........................................................
AC Test Conditions ........................................................
AC Switching Characteristics .......................................
Power Cycle Timing .......................................................
Ordering Information......................................................
Ordering Code Definitions .........................................
Package Diagrams..........................................................
Acronyms ........................................................................
Document Conventions .................................................
Units of Measure .......................................................
Document History Page .................................................
Sales, Solutions, and Legal Information ......................
Worldwide Sales and Design Support.......................
Products ....................................................................
PSoC® Solutions ......................................................
Cypress Developer Community.................................
Technical Support .....................................................
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Page 2 of 22
CY15B102Q
Pinout
Figure 1. 8-pin SOIC Pinout
CS
1
SO
2
WP
3
VSS
4
Top View
not to scale
8
VDD
7
HOLD
6
SCK
5
SI
Pin Definitions
Pin Name
I/O Type
Description
SCK
Input
Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge
and outputs occur on the falling edge. Because the device is synchronous, the clock frequency may be
any value between 0 and 25 MHz and may be interrupted at any time.
CS
Input
Chip Select. This active LOW input activates the device. When HIGH, the device enters the low-power
standby mode, ignores other inputs, and the output is tristated. When LOW, the device internally
activates the SCK signal. A falling edge on CS must occur before every opcode.
SI[1]
Input
Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of SCK
and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications.
SO[1]
Output
Serial Output. This is the data output pin. It is driven during a read and remains tristated at all other
times including when HOLD is LOW. Data transitions are driven on the falling edge of the serial clock.
WP
Input
Write Protect. This active LOW pin prevents write operation to the Status Register when WPEN is set
to ‘1’. This is critical because other write protection features are controlled through the Status Register.
A complete explanation of write protection is provided on Status Register and Write Protection on page
7. This pin must be tied to VDD if not used.
HOLD
Input
HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for another
task. When HOLD is LOW, the current operation is suspended. The device ignores any transition on
SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin must be tied to VDD if not
used.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
Note
1. SI may be connected to SO for a single-pin data interface.
Document Number: 001-89166 Rev. *F
Page 3 of 22
CY15B102Q
Overview
The CY15B102Q is a serial F-RAM memory. The memory array
is logically organized as 262,144 × 8 bits and is accessed using
an industry-standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the
CY15B102Q and a serial flash or EEPROM with the same pinout
is the F-RAM's superior write performance, high endurance, and
low power consumption.
Memory Architecture
When accessing the CY15B102Q, the user addresses 256K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a three-byte address. The upper 6
bits of the address range are 'don't care' values. The complete
address of 18 bits specifies each byte address uniquely.
Most functions of the CY15B102Q are either controlled by the
SPI interface or are handled by on-board circuitry. The access
time for the memory operation is essentially zero, beyond the
time needed for the serial protocol. That is, the memory is read
or written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition because writes occur at bus speed. By the time a new
bus transaction can be shifted into the device, a write operation
is complete. This is explained in more detail in the interface
section.
Serial Peripheral Interface - SPI Bus
The CY15B102Q is a SPI slave device and operates at speeds
up to 25 MHz. This high-speed serial bus provides high-performance serial communication to a SPI master. Many common
microcontrollers have hardware SPI ports allowing a direct
interface. It is quite simple to emulate the port using ordinary port
pins for microcontrollers that do not. The CY15B102Q operates
in SPI Modes 0 and 3.
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS is activated, the first byte transferred from the bus
Document Number: 001-89166 Rev. *F
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
operation is complete and before a new opcode can be issued.
The commonly used terms in the SPI protocol are as follows:
SPI Master
The SPI master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW. The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
The CY15B102Q operates as an SPI slave and may share the
SPI bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedance state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued for each active Chip
Select cycle.
Serial Clock (SCK)
The Serial Clock is generated by the SPI master and the
communication is synchronized with this clock after CS goes
LOW.
The CY15B102Q enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the
slave device on the rising edge of SCK and outputs are issued
on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first bit (MSB) of a SPI instruction on
the SI pin. Further, all data inputs and outputs are synchronized
with SCK.
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The CY15B102Q has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 2.
Page 4 of 22
CY15B102Q
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI and SO) together and tie off (HIGH) the HOLD and WP
pins. Figure 3 shows such a configuration, which uses only three
pins.
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
CY15B102Q uses the standard opcodes for memory accesses.
Invalid Opcode
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
Most Significant Bit (MSB)
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
Status Register
CY15B102Q has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
The 2-Mbit serial F-RAM requires a 3-byte address for any read
or write operation. Because the address is only 18 bits, the first
six bits that are fed in are ignored by the device. Although these
six bits are ‘don’t care’, Cypress recommends that these bits be
set to 0s to enable seamless transition to higher memory
densities.
Figure 2. System Configuration with SPI Port
SCK
MOSI
MISO
SCK
SPI
Microcontroller
SI
SO
CY15B102Q
CS HOLD WP
SCK
SI
SO
CY15B102Q
CS HOLD WP
CS1
HO LD 1
WP1
CS2
HO LD 2
WP2
Figure 3. System Configuration without SPI Port
P1.0
P1.1
SCK
SI
SO
Microcontroller
CY15B102Q
CS HOLD WP
P1.2
SPI Modes
CY15B102Q may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■
SPI Mode 0 (CPOL = 0, CPHA = 0)
■
SPI Mode 3 (CPOL = 1, CPHA = 1)
Document Number: 001-89166 Rev. *F
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.The two SPI modes are
shown in Figure 4 on page 6 and Figure 5 on page 6.
Page 5 of 22
CY15B102Q
The status of the clock when the bus master is not transferring
data is:
■
SCK remains at 0 for Mode 0
■
SCK remains at 1 for Mode 3
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringing the CS pin LOW. If the
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Figure 4. SPI Mode 0
CS
0
1
2
3
5
4
6
7
SCK
SI
7
6
5
4
3
2
1
0
MSB
WREN - Set Write Enable Latch
The CY15B102Q will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ‘1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status Register
has no effect on the state of this bit - only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a WRDI, a WRSR, or a WRITE operation.
This prevents further writes to the Status Register or the F-RAM
array without another WREN command. Figure 6 illustrates the
WREN command bus configuration.
Figure 6. WREN Bus Configuration
CS
LSB
0
1
2
3
4
5
6
7
SCK
Figure 5. SPI Mode 3
0
SI
0
0
0
0
1
1
0
CS
0
1
2
3
4
5
6
7
WRDI - Reset Write Enable Latch
SCK
SI
7
6
5
4
3
MSB
2
1
0
LSB
Power Up to First Access
The CY15B102Q is not accessible for a tPU time after power-up.
Users must comply with the timing parameter tPU, which is the
minimum time from VDD (min) to the first CS LOW.
Command Structure
Table 1. Opcode Commands
Description
Set write enable latch
Reset write enable latch
Read Status Register
Write Status Register
Read memory data
Fast read memory data
Write memory data
Enter sleep mode
Read device ID
Document Number: 001-89166 Rev. *F
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register and verifying that
WEL is equal to ‘0’. Figure 7 illustrates the WRDI command bus
configuration.
Figure 7. WRDI Bus Configuration
CS
0
1
2
3
4
5
6
7
SCK
There are nine commands, called opcodes, that can be issued
by the bus master to the CY15B102Q. They are listed in Table 1.
These opcodes control the functions performed by the memory.
Name
WREN
WRDI
RDSR
WRSR
READ
FSTRD
WRITE
SLEEP
RDID
HI-Z
SO
SI
SO
0
0
0
0
0
1
0
0
HI-Z
Opcode
0000 0110b
0000 0100b
0000 0101b
0000 0001b
0000 0011b
0000 1011b
0000 0010b
1011 1001b
1001 1111b
Page 6 of 22
CY15B102Q
Status Register and Write Protection
The write protection features of the CY15B102Q are multi-tiered
and are enabled through the status register. The Status Register
is organized as follows. (The default value shipped from the
factory for bit 0, WEL, BP0, BP1, bits 4–5, WPEN is ‘0’, and for
bit 6 is ‘1’.)
Table 2. Status Register
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN (0)
X (1)
X (0)
X (0)
BP1 (0)
BP0 (0)
WEL (0)
X (0)
Table 3. Status Register Bit Definition
Bit
Definition
Description
Bit 0
Don’t care
This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL)
Write Enable
WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = '1' --> Write enabled
WEL = '0' --> Write disabled
Bit 2 (BP0)
Block Protect bit ‘0’
Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1)
Block Protect bit ‘1’
Used for block protection. For details, see Table 4 on page 7.
Bit 4-5
Don’t care
These bits are non-writable and always return ‘0’ upon read.
Bit 6
Don’t care
This bit is non-writable and always returns ‘1’ upon read.
Bit 7 (WPEN)
Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
Bits 0 and 4-5 are fixed at ‘0’ and bit 6 is fixed at ‘1’; none of these
bits can be modified. Note that bit 0 ("Ready or Write in progress”
bit in serial flash and EEPROM) is unnecessary, as the F-RAM
writes in real-time and is never busy, so it reads out as a ‘0’. An
exception to this is when the device is waking up from sleep
mode, which is described in Sleep Mode on page 10. The BP1
and BP0 control the software write-protection features and are
nonvolatile bits. The WEL flag indicates the state of the Write
Enable Latch. Attempting to directly write the WEL bit in the
Status Register has no effect on its state. This bit is internally set
and cleared via the WREN and WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
Table 4. Block Memory Write Protection
BP1
BP0
Protected Address Range
0
0
None
0
1
30000h to 3FFFFh (upper 1/4)
1
0
20000h to 3FFFFh (upper 1/2)
1
1
00000h to 3FFFFh (all)
The BP1 and BP0 bits and the Write Enable Latch are the only
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to '0', the status of the WP pin is ignored.
When the WPEN bit is set to '1', a LOW on the WP pin inhibits a
Document Number: 001-89166 Rev. *F
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = '1' and WP = '0'.
Table 5 summarizes the write protection conditions.
Table 5. Write Protection
WEL WPEN WP
0
1
1
1
X
0
1
1
X
X
0
1
Protected
Blocks
Protected
Protected
Protected
Protected
Unprotected
Status
Blocks
Register
Protected
Protected
Unprotected Unprotected
Unprotected
Protected
Unprotected Unprotected
RDSR - Read Status Register
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
CY15B102Q will return one byte with the contents of the Status
Register.
WRSR - Write Status Register
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
setting the WPEN, BP0, and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the CY15B102Q, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
Page 7 of 22
CY15B102Q
Figure 8. RDSR Bus Configuration
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
0
1
0
1
0
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 9. WRSR Bus Configuration (WREN not shown)
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data
Opcode
SI
0
SO
0
0
0
0
0
0
1 D7 X
MSB
X D3 D2 X
X
LSB
HI-Z
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the CY15B102Q can perform
sequential writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode with CS
being asserted and deasserted. The next opcode is WRITE. The
WRITE opcode is followed by a three-byte address containing
the 18-bit address (A17-A0) of the first data byte to be written into
the memory. The upper six bits of the three-byte address are
ignored. Subsequent bytes are data bytes, which are written
sequentially. Addresses are incremented internally as long as
the bus master continues to issue clocks and keeps CS LOW. If
the last address of 3FFFFh is reached, the counter will roll over
to 00000h. Data is written to MSB first. The rising edge of CS
terminates a write operation. A write operation is shown in Figure
10.
Note When a burst write reaches a protected block address, the
automatic address increment stops and all the subsequent data
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology's inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
Document Number: 001-89166 Rev. *F
X
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Read Operation
After the falling edge of CS, the bus master can issue a READ
opcode. Following the READ command is a three-byte address
containing the 18-bit address (A17-A0) of the first byte of the
read operation. The upper six bits of the address are ignored.
After the opcode and address are issued, the device drives out
the read data on the next eight clocks. The SI input is ignored
during read data bytes. Subsequent bytes are data bytes, which
are read out sequentially. Addresses are incremented internally
as long as the bus master continues to issue clocks and CS is
LOW. If the last address of 3FFFFh is reached, the counter will
roll over to 00000h. Data is read MSB first. The rising edge of CS
terminates a read operation and tristates the SO pin. A read
operation is shown in Figure 11.
Fast Read Operation
The CY15B102Q supports a FAST READ opcode (0Bh) that is
provided for code compatibility with serial flash devices. The
FAST READ opcode is followed by a three-byte address
containing the 18-bit address (A17-A0) of the first byte of the
read operation and then a dummy byte. The dummy byte inserts
a read latency of the 8-clock cycle. The fast read operation is
otherwise the same as an ordinary read operation except that it
Page 8 of 22
CY15B102Q
requires an additional dummy byte. After receiving the opcode,
address, and a dummy byte, the CY15B102Q starts driving its
SO line with data bytes, with MSB first, and continues transmitting as long as the device is selected and the clock is
available. In case of bulk read, the internal address counter is
incremented automatically, and after the last address 3FFFFh is
reached, the counter rolls over to 00000h. When the device is
driving data on its SO line, any transition on its SI line is ignored.
The rising edge of CS terminates a fast read operation and
tristates the SO pin. A Fast Read operation is shown in Figure 12.
Figure 10. Memory Write (WREN not shown) Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
~
~ ~
~
0
SCK
Opcode
0
SI
0
0
0
0
20 21 22 23 0
1
18-bit Address
0
1
0
X
X
X
X
X
X A17 A16
MSB
2
3
4
5
6
7
Data
A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
LSB MSB
LSB
HI-Z
SO
Figure 11. Memory Read Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
~
~ ~
~
0
20 21 22 23 0
1
2
3
4
5
6
7
18-bit Address
0
0
1
1
X
X
X
X
X
X A17 A16
MSB
A3 A2 A1 A0
LSB
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 12. Fast Read Operation
CS
1
2
3
4
5 6
7
0
1
2
3
4
Opcode
SI
0
0
0
0
1
5
6
7
~
~ ~
~
0
SCK
20 21 22 23 24 25 26 27 28 29 30 31 0
18-bit Address
0
1 1
X X
X
X
X X A17 A16
MSB
SO
HI-Z
2
3 4
5
6
7
Dummy Byte
A3 A2 A1 A0 X
X
X X
X
X X X
LSB
Data
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Document Number: 001-89166 Rev. *F
1
LSB
Page 9 of 22
CY15B102Q
HOLD Pin Operation
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW while SCK
is LOW, the current operation will pause. Taking the HOLD pin
HIGH while SCK is LOW will resume an operation. The
transitions of HOLD must occur while SCK is LOW, but the SCK
and CS pin can toggle during a hold state.
~
~
Figure 13. HOLD Operation [2]
~
~
CS
~
~
SCK
~
~
HOLD
VALID IN
VALID IN
~
~
SI
SO
Sleep Mode
A low-power sleep mode is implemented on the CY15B102Q
device. The device will enter the low-power state when the
SLEEP opcode B9h is clocked-in and a rising edge of CS is
applied. When in sleep mode, the SCK and SI pins are ignored
and SO will be HI-Z, but the device continues to monitor the CS
pin. On the next falling edge of CS, the device will return to
normal operation within tREC time. The SO pin remains in a HI-Z
state during the wakeup period. The device does not necessarily
respond to an opcode within the wakeup period. To start the
wakeup procedure, the controller may send a “dummy” read, for
example, and wait the remaining tREC time.
Figure 14. Sleep Mode Operation
Enters Sleep Mode
t REC Recovers from Sleep Mode
CS
0
1
2
3
4
5
6
7
t SU
SCK
SI
1
0
1
1
1
0
0
SO
1
VALID IN
HI-Z
Note
2. Figure 13 shows the HOLD operation for input mode and output mode.
Document Number: 001-89166 Rev. *F
Page 10 of 22
CY15B102Q
Device ID
The CY15B102Q device can be interrogated for its
manufacturer, product identification, and die revision. The RDID
opcode 9Fh allows the user to read the manufacturer ID and
product ID, both of which are read-only bytes. The
JEDEC-assigned manufacturer ID places the Cypress
(Ramtron) identifier in bank 7; therefore, there are six bytes of
the continuation code 7Fh followed by the single byte C2h. There
are two bytes of product ID, which includes a family code, a
density code, a sub code, and the product revision code.
Table 6. Device ID
Device ID Description
71–16
(56 bits)
Device ID
(9 bytes)
Manufacturer ID
7F7F7F7F7F7FC225C8h
0111111101111111011111110111
1111011111110111111111000010
15–13
(3 bits)
12–8
(5 bits)
Family
Density
001
00101
7–6
(2 bits)
5–3
(3 bits)
2–0
(3 bits)
Sub
Rev
Rsvd
11
001
000
Product ID
Figure 15. Read Device ID
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
~
~
CS
44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71
Opcode
1
SO
0
0 1
1
1
1
1
HI-Z
D7 D6 D5 D4 D3 D2 D1 D0
~
~
SI
D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
9-Byte Device ID
Endurance
The CY15B102Q devices are capable of being accessed at least
1013 times, reads or writes. An F-RAM memory operates with a
read and restore mechanism. Therefore, an endurance cycle is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on an array of
rows and columns of 32K rows of 64-bits each. The entire row is
internally accessed once whether a single byte or all eight bytes
are read or written. Each byte in the row is counted only once in
an endurance calculation. Table 7 shows endurance calculations
for a 64-byte repeating loop, which includes an opcode, a starting
address, and a sequential 64-byte data stream. This causes
each byte to experience one endurance cycle through the loop.
Document Number: 001-89166 Rev. *F
Table 7. Time to Reach Endurance Limit for Repeating
64-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec
Endurance
Cycles/year
Years to Reach
Limit
25
45,950
1.45 × 1012
6.91
18,380
5.79 ×
1011
17.27
2.90 ×
1011
34.5
10
5
9,190
Page 11 of 22
CY15B102Q
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55 C to +150 C
Maximum accumulated storage time
At 150 °C ambient temperature ................................. 1000 h
At 125 °C ambient temperature ................................11000 h
At 85 °C ambient temperature .............................. 121 Years
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ........................................ + 260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Electrostatic discharge voltage
Human Body Model (JEDEC Std JESD22-A114-B) ................ 2 kV
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Charged Device Model (JEDEC Std JESD22-C101-A) .......... 500 V
Supply voltage on VDD relative to VSS ........–1.0 V to + 4.5 V
Latch-up current .................................................... > 140 mA
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
Operating Range
DC voltage applied to outputs
in High-Z state .................................... –0.5 V to VDD + 0.5 V
Range
Ambient Temperature (TA)
Automotive-E
–40 C to +125 C
VDD
2.0 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ [3]
Max
Unit
VDD
Power supply
2.0
3.3
3.6
V
IDD
VDD supply current
fSCK = 25 MHz;
SCK toggling between VDD – 0.2 V and
VSS, other inputs VSS or
VDD – 0.2 V. SO = Open
–
–
5
mA
ISB
VDD standby current
CS = VDD.
TA = 25 C
All other inputs VSS or VDD T = 85 C
A
–
100
150
A
–
–
250
A
–
–
750
A
–
3
5
A
TA = 125 C
IZZ
Sleep mode current
CS = VDD.
TA = 25 C
All other inputs VSS or VDD T = 85 C
A
TA = 125 C
–
–
8
A
–
–
20
A
–
–
±1
A
ILI
Input leakage current
VSS < VIN < VDD
ILO
Output leakage current
VSS < VOUT < VDD
–
–
±1
A
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOH1
Output HIGH voltage
IOH = –1 mA, VDD = 2.7 V
VOH2
Output HIGH voltage
IOH = –100 A
2.4
–
–
V
VDD – 0.2
–
–
V
VOL1
Output LOW voltage
IOL = 2 mA, VDD = 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 A
–
–
0.2
V
Note
3. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested.
Document Number: 001-89166 Rev. *F
Page 12 of 22
CY15B102Q
Data Retention and Endurance
Parameter
TDR
NVC
Description
Test condition
Min
Max
Unit
11000
–
Hours
TA = 105 C
11
–
Years
TA = 85 C
121
–
Years
13
–
Cycles
TA = 125 C
Data retention
Endurance
Over operating temperature
10
Example of an F-RAM Life Time in an AEC-Q100 Automotive Application
An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected
to operate in multiple temperature environments throughout the application’s usage life time. Accordingly, the retention specification
for F-RAM in applications often needs to be calculated cumulatively. An example calculation for a multi-temperature thermal profile is
given in the following table.
Temperature
T
Time Factor
t
T1 = 125 C
T2 = 105 C
T3 = 85 C
T4 = 55 C
Acceleration Factor with respect to Tmax
A [4]
LT
A = ----------------------- = e
L Tmax
t1 = 0.1
t2 = 0.15
t3 = 0.25
t4 = 0.50
Ea 1
1
------- --- – ----------------
k T Tmax
Profile Factor
P
1
P = ------------------------------------------------------t1
t2
t3- + -----t4-
------- + ------- + ----- A1 A2 A3 A4
A1 = 1
A2 = 8.67
A3 = 95.68
A4 = 6074.80
Profile Life Time
L (P)
L P = P L Tmax
8.33
> 10.46 Years
Capacitance
Parameter [5]
Description
CO
Output pin capacitance (SO)
CI
Input pin capacitance
Test Conditions
Max
Unit
8
pF
6
pF
Test Conditions
8-pin SOIC
Unit
Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA /
JESD51.
114
C/W
40
C/W
TA = 25 C, f = 1 MHz, VDD = VDD (typ)
Thermal Resistance
Parameter
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................3 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Notes
4. Where k is the Boltzmann constant 8.617 × 10-5 eV/K, Tmax is the highest temperature specified for the product, and T is any temperature within the F-RAM product
specification. All temperatures are in Kelvin in the equation.
5. This parameter is periodically sampled and not 100% tested.
Document Number: 001-89166 Rev. *F
Page 13 of 22
CY15B102Q
AC Switching Characteristics
Over the Operating Range
Parameters [6]
Cypress
Parameter
VDD = 2.0 V to 3.6 V
Description
Alt.
Parameter
Min
Max
Unit
fSCK
–
SCK clock frequency
0
25
MHz
tCH
–
Clock HIGH time
18
–
ns
tCL
–
Clock LOW time
18
–
ns
tCSU
tCSS
Chip select setup
12
–
ns
tCSH
tCSH
Chip select hold
12
–
ns
tHZCS
Output disable time
–
20
ns
tODV
tCO
Output data valid time
–
16
ns
tOH
–
Output hold time
0
–
ns
tD
–
Deselect time
60
–
ns
[9, 10]
–
Data in rise time
–
50
ns
tF[9, 10]
–
Data in fall time
–
50
ns
tSU
tSD
Data setup time
8
–
ns
tH
tHD
Data hold time
8
–
ns
tHS
tSH
HOLD setup time
12
–
ns
tHH
tHH
HOLD hold time
12
–
ns
tHZ[7, 8]
tLZ[8]
tHHZ
HOLD LOW to HI-Z
–
25
ns
tHLZ
HOLD HIGH to data active
–
25
ns
tOD
tR
[7, 8]
Notes
6. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, output loading of the
specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions.
7. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
8. Characterized but not 100% tested in production.
9. Rise and fall times measured between 10% and 90% of waveform.
Document Number: 001-89166 Rev. *F
Page 14 of 22
CY15B102Q
Figure 16. Synchronous Data Timing (Mode 0)
tD
CS
tCSU
tCH
tCL
tCSH
SCK
tSU
SI
tH
VALID IN
VALID IN
VALID IN
tOH
tODV
SO
HI-Z
tOD
HI-Z
CS
SCK
tHH
~
~
~
~
Figure 17. HOLD Timing
tHS
~
~
VALID IN
tHZ
Document Number: 001-89166 Rev. *F
VALID IN
tLZ
~
~
SO
tSU
~
~
HOLD
SI
tHH
tHS
Page 15 of 22
CY15B102Q
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
tPU
Power-up VDD(min) to first access (CS LOW)
1
–
ms
tPD
Last access (CS HIGH) to power-down (VDD(min))
0
–
µs
tVR [11]
VDD power-up ramp rate
50
–
µs/V
tVF [11]
VDD power-down ramp rate
100
–
µs/V
tREC [12]
Recovery time from sleep mode
–
450
µs
VDD
~
~
Figure 18. Power Cycle Timing
VDD(min)
tVR
CS
tVF
tPD
~
~
tPU
VDD(min)
Notes
11. Slope measured at any point on VDD waveform.
12. Guaranteed by design. Refer to Figure 14 for sleep mode recovery timing.
Document Number: 001-89166 Rev. *F
Page 16 of 22
CY15B102Q
Ordering Information
Ordering Code
Package
Diagram
Package Type
CY15B102Q-SXE
001-85261 8-pin SOIC
CY15B102Q-SXET
001-85261 8-pin SOIC
Operating Range
Automotive-E
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 15
B
102 Q - S
X
E
T
Option:
blank = Standard; T = Tape and Reel
Temperature Range:
E = Automotive-E (–40 C to +125 C)
X = Pb-free
Package Type: S = 8-pin SOIC
Q = SPI F-RAM
Density: 102 = 2-Mbit
Voltage: B = 2.0 V to 3.6 V
F-RAM
Cypress
Document Number: 001-89166 Rev. *F
Page 17 of 22
CY15B102Q
Package Diagrams
Figure 19. 8-Pin SOIC (208 Mils) Package Outline, 001-85261
001-85261 **
Document Number: 001-89166 Rev. *F
Page 18 of 22
CY15B102Q
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CPHA
Clock Phase
CPOL
Clock Polarity
°C
degree Celsius
EEPROM
Electrically Erasable Programmable Read-Only
Memory
Hz
hertz
EIA
Electronic Industries Alliance
kHz
kilohertz
F-RAM
Ferroelectric Random Access Memory
k
kilohm
I/O
Input/Output
Mbit
megabit
JEDEC
Joint Electron Devices Engineering Council
MHz
megahertz
JESD
JEDEC Standards
A
microampere
LSB
Least Significant Bit
F
microfarad
MSB
Most Significant Bit
s
microsecond
RoHS
Restriction of Hazardous Substances
mA
milliampere
SPI
Serial Peripheral Interface
ms
millisecond
SOIC
Small Outline Integrated Circuit
ns
nanosecond
ohm
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-89166 Rev. *F
Symbol
Unit of Measure
Page 19 of 22
CY15B102Q
Document History Page
Document Title: CY15B102Q, 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM
Document Number: 001-89166
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
4123153
GVCH
09/20/2013
New data sheet.
*A
4136685
GVCH
10/01/2013
Updated Pin Definitions:
Added additional information on WP and HOLD pins (This pin must be tied to
VDD if not used).
Modified description for VDD and VSS pins for clarity.
Description of Change
Updated Memory Operation:
Updated Sleep Mode:
Added tREC timing in Figure 14.
Updated Power Cycle Timing:
Modified the description for tVR and tVF parameters for clarity.
*B
4216165
GVCH
01/22/2014
Updated Features:
Replaced “120-year data retention” with “121-year data retention”.
Updated Functional Overview:
Replaced “data retention for 120 years” with “data retention for 121 years”.
Updated Memory Operation:
Updated HOLD Pin Operation:
Added Note 2 and referred the same note in Figure 13.
Updated Device ID:
Changed Device ID (9 bytes) from 7F7F7F7F7F7FC20025h
7F7F7F7F7F7FC22500h in Table 6.
to
Updated Maximum Ratings:
Updated Electrostatic Discharge Voltage:
Changed “Human Body Model” from 4 kV to 2 kV.
Changed “Charged Device Model” from 1.25 kV to 500 V.
Changed “Machine Model” from 250 V to 200 V.
Updated DC Electrical Characteristics:
Added Note 3 and referred the same note in “Typ” column.
Added values of ISB parameter for 25 C and 85 C.
Added values of IZZ parameter for 25 C and 85 C.
Updated Data Retention and Endurance:
Changed minimum value of TDR parameter from 120 years to 121 years at Test
Condition 85 C.
Updated title with description from “Example of an AEC-Q100 Automotive
F-RAM Application” to “Example of an F-RAM Life Time in an AEC-Q100 Automotive Application”
Updated Power Cycle Timing:
Changed description of tVR parameter from “VDD power-up slew rate” to “VDD
power-up ramp rate”.
Changed description of tVF parameter from “VDD power-down slew rate” to
“VDD power-down ramp rate”.
Document Number: 001-89166 Rev. *F
Page 20 of 22
CY15B102Q
Document History Page (continued)
Document Title: CY15B102Q, 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM
Document Number: 001-89166
Rev.
ECN No.
Orig. of
Change
Submission
Date
*C
4379377
GVCH
05/14/2014
Description of Change
Changed datasheet status from “Preliminary to Final”
Updated Device ID:
Changed Device ID (9 bytes) from 7F7F7F7F7F7FC20025h to
7F7F7F7F7F7FC225C8h in Table 6.
Maximum Ratings: Electrostatic Discharge Voltage
Removed Machine Model
*D
4462029
ZSK
07/31/2014
No technical updates.
*E
4884669
ZSK / PSR
08/14/2015
Updated Maximum Ratings:
Updated ratings of “Storage temperature” (Replaced “+125 °C” with “+150 C”).
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
Updated to new template.
*F
5688050
AESATMP8
04/19/2017
Updated logo and Copyright.
Document Number: 001-89166 Rev. *F
Page 21 of 22
CY15B102Q
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
®
®
ARM Cortex Microcontrollers
Automotive
cypress.com/arm
cypress.com/automotive
Clocks & Buffers
Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
cypress.com/pmic
Touch Sensing
Cypress Developer Community
Forums | WICED IOT Forums | Projects | Video | Blogs |
Training | Components
Technical Support
cypress.com/support
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2013-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). This document,
including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. To the extent
permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage (“Unintended Uses”). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-89166 Rev. *F
Revised April 20, 2017
Page 22 of 22