Diodes DMN63D8L N-channel enhancement mode mosfet Datasheet

DMN63D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
NEW PRODUCT
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON) max
30V
2.8Ω @ VGS = 10V
3.8Ω @ VGS = 5V
ID max
TA = +25°C
350mA
300mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Gate


Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications




Motor Control
Power Management Functions
Backlighting

Case: SOT23

Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 e3

Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
Gate Protection
Diode
ESD Protected Gate
Top View
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN63D8L-7
DMN63D8L-13
Notes:
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MX2 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
Code
B
Month
Code
Jan
1
2015
C
2016
D
2017
E
2018
F
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN63D8L
Document number: DS38026 Rev. 1 - 2
1 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
30
±20
350
280
ID
mA
400
310
1.2
ID
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Unit
V
V
IDM
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Steady State
Steady State
Value
350
359
520
243
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30






1.0
±10.0
V
µA
µA
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)







0.8
1.5
2.8
3.8
4.2
4.5
13

1.2
V
Static Drain-Source On-Resistance
0.8





80

mS
V
VDS = VGS, ID = 250A
VGS = 10.0V, ID = 250mA
VGS = 5.0V, ID = 250mA
VGS = 4.5V, ID = 250mA
VGS = 4.0V, ID = 250mA
VGS = 2.5V, ID = 10mA
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 115mA












23.2
3.0
2.2
79.9
0.9
0.4
0.1
0.2
2.3
3.9
11.4
16.7












pF
VDS = 25V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VGS = 10V, VDS = 30V,
ID = 150mA
ns
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
gFS
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

Test Condition
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN63D8L
Document number: DS38026 Rev. 1 - 2
2 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
0.8
0.6
VDS= 5V
VGS=10V
0.7
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.6
VGS=3.0V
0.5
VGS=4.0V
0.4
VGS=4.5V
0.3
VGS=5.0V
VGS=2.5V
0.2
0.0
85℃
125℃ 150℃
25℃
0.4
0.3
0.2
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
10
9
8
7
6
VGS=4.5V
VGS=2.5V
5
VGS=4.0V
4
3
2
VGS=5.0V
VGS=10V
1
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
-55℃
0.1
VGS=2.0V
0.1
0
9
8
150℃
7
125℃
6
85℃
5
4
3
2
1
25℃
-55℃
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
DMN63D8L
Document number: DS38026 Rev. 1 - 2
3 of 6
www.diodes.com
8
8
7
6
5
4
ID=250mA
3
2
1
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS= 4.5V
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
9
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
10
1
10
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
NEW PRODUCT
NEW PRODUCT
0.5
2
4
6
8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.5
VGS=10V, ID=250mA
2
1.5
VGS=4.5V, ID=250mA
1
0.5
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
August 2015
© Diodes Incorporated
2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
6
5
VGS=4.5V, ID=250mA
4
3
VGS=10V, ID=250mA
2
1
1.8
1.6
ID=1mA
1.4
1.2
ID=250μA
1
0.8
0.6
0.4
0.2
0
0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0.8
100
f=1MHz
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
0.7
0.6
VGS=0V, TJ=125℃
0.5
0.4
VGS=0V, TJ=150℃
0.3
VGS=0V,
TJ=85℃
VGS=0V,
TJ=25℃
0.2
VGS=0V,
TJ=-55℃
0.1
0
Ciss
10
Coss
Crss
1
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
5
10
15
20
25
1
PW =100µs
RDS(ON) LIMITED
ID, DRAIN CURRENT (A)
8
6
VDS=30V, ID=150mA
4
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
VGS (V)
NEW PRODUCT
NEW PRODUCT
DMN63D8L
PW =1ms
0.1
PW =10ms
PW =100ms
PW =1s
0.01
2
TJMax)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=4.5V
PW =10s
DC
0.001
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Qg (nC)
Figure 11. Gate Charge
DMN63D8L
Document number: DS38026 Rev. 1 - 2
1
4 of 6
www.diodes.com
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
August 2015
© Diodes Incorporated
DMN63D8L
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
NEW PRODUCT
D=0.9
D=0.5
D=0.7
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=357°C/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
G
DMN63D8L
Document number: DS38026 Rev. 1 - 2
5 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
Suggested Pad Layout
NEW PRODUCT
NEW PRODUCT
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN63D8L
Document number: DS38026 Rev. 1 - 2
6 of 6
www.diodes.com
August 2015
© Diodes Incorporated
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