CHA3396-QDG 27-33.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gain for 19dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A3396 A3667A A3688A YYWW YYWWG Output Power & PAE versus Frequency Main Features 30 ■ Broadband performances: 27-33.5GHz ■ 19dBm Pout at 1dB compression ■ 22dB gain ■ 30dBm OTOI ■ DC bias: Vd= 4.0V, Id= 155mA ■ 24L-QFN4x4 (QDG) ■ MSL1 28 Output power (dBm), PAE (%) 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 23 24 25 26 27 28 29 30 31 32 33 34 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OTOI 3rd order Intercept point Ref. : DSCHA3396-QDG5260 -17 Sep 15 Min 27.0 Typ Max 33.5 22 19 30 1/16 Unit GHz dB dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 27 33.5 GHz Gain Linear Gain 22 dB ΔG Gain variation in temperature 0.026 dB/°C GCTRL Gain control range 15 dB rd OTOI 3 order Intercept point 30 dBm P-1dB Output power @ 1dB compression 19 dBm Psat Saturated Output Power 21 dBm RLin Input Return Loss 10 dB RLout Output Return Loss 13 dB NF Noise figure 4.5 dB Id Quiescent Drain current 155 mA Vg Gate voltage -0.35 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Ref. : DSCHA3396-QDG5260 -17 Sep 15 2/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5V V Id Drain bias quiescent current 200 mA Vg Gate bias voltage -2 to +0.4 V Pin Maximum input power 6 dBm (2) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Thermal Resistance channel to ground paddle =100.9°C/W for Tamb. = +85°C with 4.0V & 155mA. Typical Bias Conditions Tamb.= +25°C Symbol Pad No VG1 8 VG2 9 VG3 10 VD1 23 VD2 22 VD3 21 Parameter DC Gate voltage 1st stage DC Gate voltage 2nd stage DC Gate voltage 3rd stage DC Drain voltage 1st stage DC Drain voltage 2nd stage DC Drain voltage 3rd stage Ref. : DSCHA3396-QDG5260 -17 Sep 15 3/16 Values -0.35 -0.35 -0.35 4.0 4.0 4.0 Unit V V V V V V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA3396-QDG Recommended max. junction temperature (Tj max) : 148 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 0.6 => Pdiss. Max. derating above Tcase(1)= 85 °C : 10 Junction-Case thermal resistance (Rth J-C)(2) : <100 Minimum Tcase operating temperature(3) : -40 Maximum Tcase operating temperature(3) : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 0.7 0.5 0.4 0.3 0.2 0.1 Pdiss. Max. @Tj <Tj max (W) -50 -25 0 25 50 75 100 125 150 0 175 Tcase Pdiss. Max. @Tj <Tj max (W) 0.6 Example: QFN 16L 3x3 Location of temperature reference point (Tcase) on package's bottom side Tcase (°C) Ref. : DSCHA3396-QDG5260 -17 Sep 15 4/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Package Sij parameters Tamb.= +25°C, Vd = +4V, Id = 155mA Freq S11 PhS11 S21 PhS21 S12 (GHz) (dB) (°) (dB) (°) (dB) 2 -0.177 135.6 -67.577 20.7 -67.178 3 -0.249 113.5 -66.628 11.6 -64.533 4 -0.306 90.9 -66.419 20.1 -66.730 5 -0.374 68.4 -61.518 10.3 -71.920 6 -0.478 45.9 -53.854 -31.1 -71.094 7 -0.614 23.3 -43.534 -85.5 -61.481 8 -0.711 1.4 -33.949 -170.4 -58.074 9 -0.908 -20.5 -26.532 116.7 -52.430 10 -1.008 -41.9 -20.149 47.3 -52.007 11 -1.109 -63.1 -14.839 -21.7 -51.030 12 -1.111 -84.1 -12.112 -91.4 -52.842 13 -1.118 -105.5 -9.836 -145.6 -54.224 14 -1.110 -127.4 -7.538 167.5 -52.192 15 -1.178 -150.8 -5.046 120.8 -48.327 16 -1.228 -173.9 -2.488 76.5 -49.967 17 -1.284 161.5 0.190 32.5 -46.997 18 -1.367 136.7 2.997 -11.0 -48.992 19 -1.541 109.7 5.939 -55.7 -48.651 20 -1.765 81.9 8.897 -101.6 -51.248 21 -2.027 53.3 11.893 -149.9 -50.772 22 -2.409 23.3 14.859 159.2 -52.372 23 -3.099 -7.9 17.571 104.6 -50.227 24 -4.313 -39.8 19.646 47.8 -48.337 25 -5.869 -72.3 21.219 -10.3 -48.669 26 -8.557 -109.6 22.154 -68.0 -44.901 27 -12.434 -139.6 22.757 -123.6 -43.561 28 -16.855 -179.1 23.288 179.6 -38.962 29 -25.143 157.1 23.436 123.5 -37.464 30 -43.068 141.2 23.316 65.7 -35.734 31 -23.546 -101.3 22.507 9.3 -35.719 32 -17.647 -132.3 21.717 -45.1 -34.429 33 -11.284 -161.2 21.245 -95.9 -35.382 34 -8.198 167.9 20.909 -156.4 -37.963 35 -5.091 141.7 19.425 139.1 -42.719 36 -3.086 111.1 16.200 75.2 -55.617 37 -1.780 83.2 12.163 20.9 -49.723 38 -1.272 59.2 8.109 -26.9 -42.745 39 -0.999 38.2 4.609 -71.0 -39.377 40 -0.868 19.8 1.638 -116.5 -36.317 Refer to the paragraph “Definition of the Sij reference planes” Ref. : DSCHA3396-QDG5260 -17 Sep 15 5/16 PhS12 (°) 34.5 -2.4 -15.2 -38.2 92.0 58.6 22.8 -24.8 -78.0 -140.2 168.9 119.1 131.3 77.1 44.3 18.8 -2.1 -16.3 -22.7 -26.7 -30.4 -21.7 -23.6 -33.3 -39.4 -33.3 -51.3 -88.5 -110.1 -128.1 -155.4 162.9 138.1 109.8 106.5 -158.7 -171.0 170.3 138.4 S22 (dB) -0.962 -1.094 -1.267 -1.453 -1.688 -2.020 -2.652 -3.367 -4.663 -6.852 -8.188 -8.950 -9.428 -10.532 -12.115 -14.194 -16.885 -21.242 -28.518 -35.954 -22.292 -16.442 -13.242 -11.683 -11.452 -12.756 -14.025 -16.954 -21.978 -24.820 -28.188 -18.619 -12.747 -8.483 -5.934 -4.789 -4.701 -5.397 -8.063 PhS22 (°) 108.6 71.9 34.2 -3.4 -42.0 -81.2 -121.3 -163.5 152.3 106.2 72.4 28.3 -14.8 -55.3 -93.0 -129.4 -168.3 151.8 111.7 -109.2 -152.1 157.5 114.4 72.7 36.9 1.8 -32.4 -82.6 -167.0 159.2 129.0 -180.0 146.1 122.3 87.2 57.0 27.7 -2.6 -37.6 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Linear Gain versus Frequency in Temperature 30 28 26 Gain (dB) 24 22 20 18 -40 C 25 C 85 C 16 14 12 10 23 24 25 26 27 28 29 30 31 32 33 34 32 33 34 Frequency (GHz) Return losses versus Frequency 0 -5 RL in RL out Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 23 24 25 26 27 28 29 30 31 Frequency (GHz) Ref. : DSCHA3396-QDG5260 -17 Sep 15 6/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA Input return loss versus gain ctrl Output return loss versus gain ctrl 0 0 -4 Min. Gain Output return loss (dB) Input return loss (dB) -4 -8 -12 Max. Gain -16 -20 Min. Gain -8 -12 -16 Max. Gain -20 -24 -28 -24 -32 23 25 27 29 31 33 23 24 25 26 27 Frequency (GHz) 28 29 30 31 32 33 34 Frequency (GHz) Linear gain & Current versus Gate Voltage 28 0.35 27.5 GHz 26 29.5 GHz 31.5 GHz 33.5 GHz Id 24 0.3 22 0.25 Gain (dB) 18 16 0.2 14 12 0.15 10 8 Drain current (A) 20 0.1 6 4 0.05 2 0 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 0 -0.3 Gate voltage (V) Ref. : DSCHA3396-QDG5260 -17 Sep 15 7/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA Noise Figure versus Temperature 10 9 8 Noise Figure (dB) 7 6 5 4 3 2 -40 C 25 C 85 C 1 0 24 25 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) Noise Figure & Current versus Gate Voltage 14 350 13 12 27 GHz 11 30 GHz 34 GHz Id 250 9 8 200 7 6 150 5 4 Drain current (mA) Noise figure (dB) 10 300 100 3 2 50 1 0 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 0 -0.3 Gate voltage (V) Ref. : DSCHA3396-QDG5260 -17 Sep 15 8/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA Output Power & PAE versus Frequency 30 28 Output power (dBm), PAE (%) 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 23 24 25 26 27 28 29 30 31 32 33 34 32 33 34 Frequency (GHz) Pout at 1dB compression versus Temperature 26 25 Output power at 1dB comp. (dBm) 24 85°C 25°C -40°C 23 22 21 20 19 18 17 16 15 23 24 25 26 27 28 29 30 31 Frequency (GHz) Ref. : DSCHA3396-QDG5260 -17 Sep 15 9/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA Output TOI versus Output Power DCL 40 38 27.5 GHz 29.5 GHz 31.5 GHz 33.5 GHz Output TOI (dBm) 36 34 32 30 28 26 24 -2 0 2 4 6 8 10 12 14 16 18 20 18 20 Output power DCL (dBm) IMD3 versus Output Power DCL 80 75 70 65 27.5 GHz 29.5 GHz 31.5 GHz 33.5 GHz IMD3 (dBc) 60 55 50 45 40 35 30 25 20 -2 0 2 4 6 8 10 12 14 16 Output power DCL (dBm) Ref. : DSCHA3396-QDG5260 -17 Sep 15 10/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.0V, Id = 155mA IMD3 versus Temperature at 31.5GHz 100 90 80 IMD3 (dBc) 70 60 50 40 30 -40 C 85 C 25 C 20 10 -2 0 2 4 6 8 10 12 14 16 18 20 16 18 20 Output power DCL (dBm) IMD3, 5 & 7 versus Output Power DCL 100 90 IMD (dBc) 80 70 60 50 40 30 IMD3 IMD5 IMD7 20 10 -2 0 2 4 6 8 10 12 14 Output power DCL (dBm) 1- Ref. : DSCHA3396-QDG5260 -17 Sep 15 11/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Package outline (1) Matte tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 25- GND 12345678- NC Gnd(2) Gnd(2) RF IN Gnd(2) Gnd(2) NC VG1 910111213141516- VG2 VG3 NC NC Gnd(2) Gnd(2) RF OUT Gnd(2) 1718192021222324- Gnd(2) NC NC Gnd(2) VD3 VD2 VD1 NC (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA3396-QDG5260 -17 Sep 15 12/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". Sij measurements are made in probes configuration with a dedicated board, without RF connectors. 3.18 3.18 ESD sensitivity Standard MIL-STD-1686C ESD STM5.1-1998 Value HBM Class 1 HBM Class 1A Package Information Parameter Package body material Lead finish MSL Rating Ref. : DSCHA3396-QDG5260 -17 Sep 15 Value RoHS-compliant Low stress Injection Molded Plastic 100% matte tin (Sn) MSL1 13/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4350 / 10mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 100pF ±5% and 10nF ±10%are recommended for all DC accesses. ■ See application note AN0017 for details. Ref. : DSCHA3396-QDG5260 -17 Sep 15 14/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Notes Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. ESD protections are also implemented on all DC accesses. The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package. DC Schematic 4V, 155mA x1 x7 D1 x1 x7 26 Ω D2 x1 x7 18 Ω D3 7Ω 71mA OUT 54mA 30mA IN 465 Ω x3 x1 465 Ω G1 Ref. : DSCHA3396-QDG5260 -17 Sep 15 x3 x1 465 Ω G2 15/16 x3 x1 G3 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 4x4 package: CHA3396-QDG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3396-QDG5260 -17 Sep 15 16/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34