MUR1020(F)CT THRU MUR1060(F)CT HD TO73 TO-220 Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 10A ITO- 220 AB TO- 220 AB ●VRRM 200V-600V ●High surge current capability ●Glass passivated chip Applications ● Rectifier 1 Marking 1 2 ● MUR10XX(F)CT XX : From 20 To 60 Item Symbol Unit 3 PIN 1 PIN 2 PIN 3 CASE 2 3 MUR10-(F)CT Test Conditions 20 40 60 200 400 600 Repetitive Peak Reverse Voltage VRRM V Average Rectified Output Current Io A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 10 IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 120 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Surge(Non-repetitive)Forward Current Junction Temperature Storage Temperature Electrical Characteristics (Ta=25℃ Unless otherwise specified） MUR10-(F)CT Item Peak Forward Voltage Peak Reverse Current Reverse Recovery Time Thermal Resistance(Typical) (Note1) Typical Junction Capacitance(Note2) Symbol Unit VF V IRRM1 IRRM2 uA Test Condition IF =5.0A V RM=VRRM 20 40 60 1.0 1.3 1.7 Ta =25℃ Ta =125℃ IF=0.5A IRM=1A IRR=0.25A 10 500 Trr ns RθJ-A ℃/W 30 Cj pF 150 50 NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 24 10 140 120 8.3ms Single Half Sine Wave JEDEC Method 100 8 80 6 60 4 40 2 20 0 50 70 90 110 130 150 Tc(℃) 0 1 10 100 Number of Cycles IR(uA) IF(A) FIG3:Instantaneous Forward Voltage 45 30 FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 15 100 MUR1020(F)CT 10 Tj=125℃ 10 5.0 Tj=100℃ 1.0 MUR1040(F)CT 1.0 MUR1060(F)CT Tj=25℃ 0.1 0.5 0.2 0.1 0.01 0 Ta=25℃ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.2 2.0 20 40 60 80 2.4 VF(V) 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D t rr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 TO- 220 TO- 220 AB ITO- 220 AB JSHD JSHD High Diode Semiconductor 3