INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4868，IIRFP4868 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation @TC=25℃ 517 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.29 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4868，IIRFP4868 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 300 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=42A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 5.0 V 32 mΩ ±0.1 μA VDS=300V; VGS= 0V 20 μA IS=42A, VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark