INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±16 V ID Drain Current-Continuous 99 A IDM Drain Current-Single Pulsed 396 A PD Total Dissipation @TC=25℃ 143 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.05 ℃/W 110 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA 1 RDS(on) Drain-Source On-Resistance VGS=10V; ID=50A IGSS Gate-Source Leakage Current VGS= ±16V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 2.5 V 6.8 mΩ ±0.1 μA VDS=60V; VGS= 0V 20 μA Is=50A, VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark