DB2F200N4S DBC2F200N4S Jan. 2007 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Common Side Common Center 1 2 3 1 2 3 Features ☞ Repetitive Reverse Voltage : VRRM = 400V ☞ Low Forward Voltage Drop : VF(typ.) = 1.05V ☞ Average Forward Current : IF(AV.) = 200A @ Tc = 100℃ ☞ Ultra-Fast Reverse Recovery Time : trr(typ.) = 150 ns ☞ Extensive Characterization of Recovery Parameters ☞ Reduced EMI and RFI ☞ Isolation Type Package Package : 5DM-2 Series Applications Motor Drives, Free wheel use, High Power Converters,Welders, Various Switching and Telecommunication Power Supply. Please see the package Out line information Ordering Information Device Name Optional Information DB2F200N4S DBC2F200N4S Common Side Common Center Absolute Maximum Ratings @ Tj=25℃(Per Leg) Symbol Parameter Conditions I2t Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25℃ @ Tc = 100℃ Surge(non-repetitive) Forward Current I2t for Fusing Tj Tstg Visol Pd - Junction Temperature Storage Temperature Isolation Voltage Maximum Power Dissipation Mounting Torque Terminal Torque Weight VRRM VR(DC) IF(AV) IFSM Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj = 25℃ Start @ AC 1 minutes Typical Including Screws Copyright@Dawin Electronics Corp. All right reserved 1/4 Ratings Unit 400 320 400 200 3300 V V A A A 45.0* 103 A2s -40 ~ 150 -40 ~ 125 2500 820 4.0 3.0 180 ℃ ℃ V W N.m N.m g DB2F200N4S DBC2F200N4S Jan. 2007 Thermal Characteristics Values Symbol Rth(j-c) Parameter Conditions Thermal Resistance Junction to Case Min. Typ. Max. - - 0.18 Unit ℃/W Electrical Characteristics @ Tj=25℃ (unless otherwise specified) Values Symbol VR VFM IRRM Trr Parameter Conditions Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Min. Max. 400 - - V - 1.05 0.95 - 1.3 1.1 2.0 V V mA Tc = 25℃ - 150 200 ns Tc = 100℃ - 220 - ns IR = 100uA IFM = 200A, Tc = 25℃ IFM = 200A, Tc =100℃ TC = 100℃, VRRM applied IFM = 200A, VR = 200V di/dt=-100A/us] Copyright@Dawin Electronics Corp. All right reserved 2/4 Unit Typ. DB2F200N4S DBC2F200N4S Jan. 2007 Performance Curves 1000 R e ve r s e R e c o ve r y Tim e ,tr r ,[ n s ] F orw ard C urrent. IF [A] 160 100 10 1 0 0.5 1 1.5 2 2.5 3 150 140 130 120 110 100 1000 di/dt[A/us] Forward Voltage Drop. VF [V] Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Average Forward Current IF(AVG) [A] Fig. 2 : Typical Reverse Recovery Time vs. -di/dt T h e r m a l R e s p o n c e Z th j c [ ℃ / w ] 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 250 200 150 DC 100 50 0 60 Rectangular Pulse Duration[sec] 80 100 120 Case Temperature Tc[℃] Fig. 3 : Transient Thermal Impedance(Zthjc) Characteristics Fig. 4 : Forward Current Derating Curve Copyright@Dawin Electronics Corp. All right reserved 3/4 140 160 DB2F200N4S DBC2F200N4S Jan. 2007 Package Out Line Information 5DM-2 Series 93±0.3 M6 DP10.5 Dimensions in mm 80±0.3 23±0.5 23±0.5 Φ6. 4 ±0. 2 Mounting Hole D 1 W 35±0.5 3 20±0.2 5±0.2 18±0.2 14±0.2 16±0.5 32±0.5 90±0.5 Copyright@Dawin Electronics Corp. All right reserved 4/4 6.1±0.5 LABEL PLATE MAX 31 9.6 1.2±0.05 22±0.5 9.8±0.2 Bolt Depth 14.5±0.3 2