JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB2×2-6L-J V(BR)DSS ID RDS(on)MAX 21mΩ@-4.5V -12V -16A 27mΩ@-2.5V 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. FEATURES Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge APPLICATIONS PWM application Load switch Battery charge in cellular handset Equivalent Circuit 0$5.,1* Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDSS -12 Gate-Source Voltage VGS ±8 Drain Current-Continuous ID -16 Drain Current-Pulsed (note 1) IDM -65 Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) PD 2.5 18 Thermal Resistance from Junction to Ambient (note 4) RθJA 50 Thermal Resistance from Junction to Case (note 4) RθJC 6.9 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~+150 www.cj-elec.com 1 Unit V A W ℃/W ℃ H,Sep,2016 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA -12 V Gate-Body Leakage Current IGSS VDS =0V, VGS =±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =-12V, VGS =0V -1 µA -1 V On Characteristics (note 5) Gate-Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(on) Forward Transconductance gFS VDS =VGS, ID =-250µA -0.4 -0.7 VGS =-4.5V, ID =-6.7A 21 VGS =-2.5V, ID =-6.2A 27 VDS =-10V, ID =-6.7A 40 mΩ S Dynamic Characteristics (note 6) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2700 VDS =-10V,VGS =0V,f =1MHz pF 680 590 VDS =-6V,VGS =-8V,ID =-10A VDS =-6V,VGS =-4.5V,ID =-10A 60 100 35 48 5 nC 10 Drain-Source Diode Characteristics Diode Forward Current (note 5) IS Diode Forward Voltage(note 4) VSD VGS =0V, ISD=-8A -16 A -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. This test is performed with infinite heat sink at Tc=25℃. 4. Surface mounted on FR4 board, t≤10S. 5. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%. 6. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 H,Sep,2016 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -20 -20 VGS=-1.8V,-2V,-3V,-4V Ta=25℃ VDS=-3V Pulsed Pulsed -16 ID VGS=-1.5V -12 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -16 -8 VGS=-1.2V -4 -0 -0.0 -1.0 -1.5 5'6 21 ²² -2.0 VDS -3.0 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE ,' 5'6 21 60 ²² VGS -3 (V) 9*6 Ta=25ć Pulsed (m) RDS(ON) ON-RESISTANCE (m) RDS(ON) -2.5 Ta=25ć Pulsed 70 ON-RESISTANCE Ta=25℃ -8 -0 -0.5 80 50 Ta=100℃ -4 DRAIN TO SOURCE VOLTAGE 60 -12 40 VGS=-2.5V 30 20 40 ID=-6.7A 20 VGS=-4.5V 10 0 0 -0 -10 -20 -30 DRAIN CURRENT ID -40 -1 -50 (A) 96' ,6²² -20 -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) 7KUHVKROG9ROWDJH -0.8 Ta=25ć Pulsed (V) VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) -0.7 -10 -0.6 ID=-250uA -0.5 -0.4 -0.3 -1 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.0 -0.2 25 -1.2 VSD (V) 50 75 100 JUNCTION TEMPERATURE 3 125 TJ 150 (ć ) H,Sep,2016 7\SLFDO&KDUDFWHULVWLFV &DSDFLWDQFH 4000 3200 CAPACITANCE C (pF) Ciss 2400 1600 Coss 800 Crss 0 -0 -3 -6 DRAIN TO SOURCE VOLTAGE VDS www.cj-elec.com -9 -12 (V) 4 H,Sep,2016 DFNWB2X2-6L-J Package Outline Dimensions Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.028 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout www.cj-elec.com 5 H,Sep,2016 DFNWB2X2-6L Tape and Reel www.cj-elec.com 6 H,Sep,2016