StrongIRFET™ IRF40R207 HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS 40V RDS(on) typ. max 4.2m 5.1m ID (Silicon Limited) 90A ID (Package Limited) 56A D G S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free RoHS Compliant, Halogen-Free D-Pak IRF40R207 G Gate Package Type IRF40R207 D-Pak Standard Pack Form Quantity Tape and Reel 2000 16 Orderable Part Number IRF40R207 Limited by package ID = 55A 14 80 12 10 T J = 125°C 8 6 4 60 40 20 T J = 25°C 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S Source 100 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Base part number D Drain www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback March 31, 2015 IRF40R207 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) IAR Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance RG Units A W W/°C V -55 to + 175 °C 300 86 mJ 165 Single Pulse Avalanche Energy Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mounted) RCS Junction-to-Ambient RJA IGSS Max. 90 64 56 337* 83 0.56 ± 20 See Fig 15, 16, 23a, 23b Typ. ––– ––– ––– Min. Typ. Max. 40 ––– ––– ––– 0.039 ––– ––– 4.2 5.1 ––– 5.9 ––– 2.2 3.0 3.9 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 2.0 ––– Max. 1.8 50 110 A mJ Units °C/W Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A m VGS = 6.0V, ID = 28A V VDS = VGS, ID = 50µA VDS =40 V, VGS = 0V µA VDS =40V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.056mH,RG = 50, IAS = 55A, VGS =10V. ISD 55A, di/dt 890A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH,RG = 50, IAS = 18A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf * Pulse drain current is limited at 224A by source bonding technology. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF40R207 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 170 ––– ––– ––– ––– ––– ––– Typ. ––– 45 12 15 30 7.8 35 td(off) Turn-Off Delay Time ––– 25 tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 19 2110 340 Crss Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– 220 ––– ––– 400 ––– VGS = 0V, VDS = 0V to 32V ––– 498 ––– VGS = 0V, VDS = 0V to 32V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 90 ––– ––– 337* Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.3 dv/dt Peak Diode Recovery dv/dt ––– 6.4 ––– trr Reverse Recovery Time ––– 21 ––– Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– 22 13 15 1.1 ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID = 55A 68 ID = 55A ––– VDS = 20V nC ––– VGS = 10V ––– ––– VDD = 20V ––– ID = 30A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– VGS = 0V VDS = 25V pF ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2015 International Rectifier A V D G S TJ = 25°C,IS = 55A,VGS = 0V V/ns TJ = 175°C,IS = 55A,VDS = 40V ns TJ = 25°C VDD = 34V TJ = 125°C IF = 55A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback March 31, 2015 IRF40R207 1000 1000 100 BOTTOM 100 10 4.5V BOTTOM 4.5V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 2.2 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics 1000 100 T J = 175°C 10 T J = 25°C 1 VDS = 10V 60µs PULSE WIDTH 0.1 2 4 6 8 ID = 55A VGS = 10V 1.8 1.4 1.0 0.6 10 -60 Fig 5. Typical Transfer Characteristics 100000 20 60 100 140 180 Fig 6. Normalized On-Resistance vs. Temperature 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 10000 Ciss 1000 -20 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Coss Crss 100 ID= 55A 12 VDS= 32V VDS= 20V 10 VDS= 8V 8 6 4 2 0 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2015 International Rectifier 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Drain-to-Source Voltage Submit Datasheet Feedback March 31, 2015 IRF40R207 IRF40R207 1000 T J = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec 100 1msec LIMITED BY PACKAGE 10 1 10msec VGS = 0V 0.1 0.01 0.0 0.5 1.0 1.5 2.0 0.1 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area 0.3 50 Id = 1.0mA 48 0.3 46 0.2 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC Tc = 25°C Tj = 175°C Single Pulse 0.1 44 0.2 42 0.1 40 0.1 0.0 38 -60 -20 20 60 100 140 -5 180 T J , Temperature ( °C ) 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m ) 0 Fig 12. Typical Coss Stored Energy 20 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 16 12 8 4 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF40R207 Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 55A 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figures 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback March 31, 2015 IRF40R207 8 IF = 37A V R = 34V TJ = 25°C 7 3.5 6 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.5 2.5 ID = 50µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 TJ = 125°C 5 4 3 2 1 0.5 0 -75 -25 25 75 125 175 0 200 T J , Temperature ( °C ) 600 800 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 120 8 IF = 55A V R = 34V 7 100 TJ = 25°C TJ = 125°C 90 80 QRR (nC) 5 IF = 37A V R = 34V 110 TJ = 25°C TJ = 125°C 6 IRRM (A) 400 4 3 70 60 50 40 30 2 20 1 10 0 0 0 200 400 600 0 800 200 400 600 800 diF /dt (A/µs) diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 120 90 IF = 55A V R = 34V TJ = 25°C 80 TJ = 125°C 110 QRR (nC) 100 70 60 50 40 30 20 10 0 0 200 400 600 800 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF40R207 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback March 31, 2015 IRF40R207 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 12 ASSEMBLY LOT CODE 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF40R207 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF40R207 Qualification Information† Industrial Qualification Level (per JEDEC JESD47F††) Moisture Sensitivity Level MSL1 D-Pak (per JEDEC J-STD-20D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015