CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTDA0N10L3 BVDSS ID RDSON@VGS=10V, ID=3A RDSON@VGS=5V, ID=2A 100V 3.9A 77mΩ(typ) 87mΩ(typ) Description The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications. Features • Single Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline MTDA0N10L3 SOT-223 D S D G G：Gate D：Drain S：Source Ordering Information Device MTDA0N10L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTDA0N10L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V,TC=70°C Continuous Drain Current @VGS=10V,TA=25°C Continuous Drain Current @VGS=10V,TA=70°C Pulsed Drain Current TC=25℃ TC=70℃ Total Power Dissipation TA=25℃ TA=70℃ Symbol Limits VDS VGS Tj, Tstg 100 ±20 7.0 5.6 3.9 3.2 20 *1 10 6.4 3.1 2.0 -55~+150 °C Symbol Rth,j-c Rth,j-a Value 12 40 *3 Unit °C/W °C/W ID IDM PD Operating Junction and Storage Temperature Range Unit V A W Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 120°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) ΔVGS(th)/ΔTj GFS *1 IGSS IDSS RDS(ON) Dynamic Ciss Coss Crss MTDA0N10L3 *1 Min. Typ. Max. Unit 100 1.5 - 0.1 2.2 -6 8 77 87 3.0 ±100 1 25 105 120 V V/°C V mV/°C S nA - 396 55 23 - μA mΩ mΩ pF Test Conditions VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA Reference to 25°C, ID=250μA VDS =5V, ID=3A VGS=±20V VDS =100V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=3A VGS =5V, ID=2A VGS=0V, VDS=25V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 11 1.5 3.5 8 15 15 7 Max. - - 0.81 30 25 3.9 20 1.3 - Unit Test Conditions nC VDS=80V, VGS=10V, ID=3A ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω A V ns nC IS=3A, VGS=0V IF=3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTDA0N10L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 20 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V ID, Drain Current (A) 16 12 VGS=4V 8 4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 400 2.4 ID=3A 360 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 320 280 240 200 160 120 80 2 VGS=10V, ID=3A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 77mΩ 40 0 0 0 MTDA0N10L3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 VDS=80V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Gate Charge Characteristics 100 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 VDS=50V 8 VDS=20V 6 4 2 ID=3A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 4 6 8 Qg, Total Gate Charge(nC) 10 12 5 ID, Maximum Drain Current(A) 100 10 2 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 Tj, Junction Temperature(°C) RDSON Limited 10μs 1 100μs 1ms 0.1 TA=25°C, Tj=150°C VGS=10V, θJA=40°C/W Single Pulse 10ms 100ms DC 4.5 4 3.5 3 2.5 2 1.5 1 VGS=10V, RθJA=40°C/W 0.5 0 0.01 0.1 MTDA0N10L3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 300 Peak Transient Power (W) 20 ID, Drain Current(A) 16 12 8 4 250 TJ(MAX) =150°C TA=25°C θJA=40°C/W 200 150 100 50 VDS=10V 0 0 2 4 6 8 VGS , Gate-Source Voltage(V) 10 0 1E-05 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTDA0N10L3 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTDA0N10L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDA0N10L3 CYStek Product Specification Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOT-223 Dimension A Marking: B Device Name C 1 2 DA0N10 Date Code 3 D E F H G Style: Pin 1.Gate 2.Drain 3.Source a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o o 0 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o o 0 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDA0N10L3 CYStek Product Specification