DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Features and Benefits BVDSS RDS(ON) Max -40V 13mΩ @ VGS = -10V 18mΩ @ VGS = -4.5V ID Max TA = +25°C -10.3A -8.8A Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33% of the Board Area Occupied by SO-8, Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Reverse Polarity Protection Power Management Functions DC-DC Converters ® PowerDI3333-8 D Pin 1 S S S G G D D D D Bottom View S Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMP4013LFGQ-7 DMP4013LFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information PowerDI3333-8 YYWW ADVANCE INFORMATION Product Summary P13= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) P13 PowerDI is a registered trademark of Diodes Incorporated. DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 1 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Continuous Drain Current (Note 7) VGS = -10V Value -40 ±20 Units V V Steady State TA = +25°C TA = +70°C ID -10.3 -8.3 A t<10s TA = +25°C TA = +70°C ID -13.7 -11 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -80 A Maximum Continuous Body Diode Forward Current (Note 7) IS -2.6 A Avalanche Current, L = 0.1mH IAS -34 A Avalanche Energy, L = 0.1mH EAS 58 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Units W RθJC Value 1 123 69 2.1 60 34 3.3 TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range °C/W W °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -40 — — V VGS = 0V, ID = -250μA IDSS — — -1 µA VDS = -40V, VGS = 0V Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS — — ±100 nA VGS = ±20V, VDS = 0V VGS(TH) -3 13 VDS = VGS, ID = -250μA RDS(ON) — 9.4 V Static Drain-Source On-Resistance -1 — — 12.3 18 mΩ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance VSD — -0.7 -1.2 V Ciss — 3,426 — pF Output Capacitance Coss — 283 — pF Reverse Transfer Capacitance Crss — pF Rg 235 4.7 — — — 32.5 68.6 — — Ω nC Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Qg Qg — — Qgs — 8.2 — nC Gate-Drain Charge Qgd — 9.9 — nC Turn-On Delay Time tD(ON) — 5.3 — ns Turn-On Rise Time Turn-Off Delay Time tR — — 20 — — ns ns — ns nC — 126 83 Body Diode Reverse Recovery Time tRR — 19.5 — ns Body Diode Reverse Recovery Charge QRR — 9.8 — nC Turn-Off Fall Time Notes: tD(OFF) tF VGS = -10V, ID = -10A VGS = -4.5V, ID = -8A VGS = 0V, IS = -1A VDS = -20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -10A VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A IF = -10A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 2 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ 30 30.0 VGS = -10V VDS = -5.0V VGS = -4.5V VGS = -2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -4.0V VGS = -3.5V 20.0 VGS = -3.0V 15.0 10.0 20 15 10 TA = 150C TA = 125C 5 5.0 VGS = -2.0V TA = 85C TA = 25C TA = -55C 0 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 0.5 5 0.016 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D ,N ) 0.014 VGS = -4.5V 0.012 VGS = -10V 0.01 0.008 1 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.06 ID = -10A 0.05 ID = -8A 0.04 0.03 0.02 0.01 O (S D R 0.006 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 0 VGS = -10V 0.018 TA = 150C TA = 125 C 0.016 0.014 TA = 85C 0.012 TA = 25C 0.01 0.008 TA = -55C 0.006 0.004 2 4 6 8 10 12 14 16 18 VGS , GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 0.02 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25.0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 30 VGS = -10V ID = -10A 1.6 1.4 VGS = -4.5V ID = -8A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 3 of 7 www.diodes.com March 2018 © Diodes Incorporated 1.8 0.02 VGS = -4.5V ID = -8A 0.018 0.016 0.014 VGS = -10V ID = -10A 0.012 0.01 0.008 0.006 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.022 1.6 -ID-I =250A D = 250礎 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 -I D = 1mA 1.4 0.004 -50 10000 C T, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 25 20 15 TA= 150C TA= 85C 10 TA= 125C 5 0 TA= 25C TA= -55C 0 Ciss 1000 Coss Crss 100 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(ON) Limited 8 )A 10 ( T N DC E R PW = 10s R U 1 PW = 1s C N PW = 100ms IA R D PW = 10ms ,D I 0.1 T = 150° C PW = 1ms J(MAX) ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP4013LFGQ 6 VDS = -20V ID = -10A 4 2 0 TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0 10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 70 4 of 7 www.diodes.com 0.01 0.1 PW = 100µs 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2018 © Diodes Incorporated DMP4013LFGQ D = 0.9 D = 0.7 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 119癈 /W 119°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 1E-04 DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 March 2018 © Diodes Incorporated DMP4013LFGQ Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) z(4x) 8 b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3 25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Y4 X1 Y1 Y3 Y X DMP4013LFGQ Document number: DS38779 Rev. 2 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 1 C 6 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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