BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BVCEO > 45V IC = 0.5A Continuous Collector Current ICM = 1A Peak Pulse Current Complementary PNP Types: BC807-16 Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT23 Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight 0.008 grams (Approximate) SOT23 Top View Pin-Out Device Symbol Top View Ordering Information (Notes 4 and 5) Part number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel BC817-16Q-7-F BC817-40Q-7-F BC817-40Q-13-F Automotive Automotive Automotive K6A K6C K6C 7 7 13 8 8 8 3,000 3,000 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 XXX = Product Type Marking Code (See table above) YM = Date Code Marking Y = Year ex: C = 2015 M = Month ex: 9 = September Date Code Key Year Code Month Code 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug Sep Oct Nov Dec 8 9 O N D BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IBM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Value 50 45 5.0 0.5 1.0 200 Unit V V V A A mA Value 310 350 403 357 350 -65 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RθJA RθJL TJ, TSTG mW °C/W °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Symbol ESD HBM Value 8,000 Unit V JEDEC Class 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q Thermal Characteristics and Derating Information 400 Thermal Resistance ( C/W) 0.3 350 300 o Max Power Dissipation (W) 0.4 0.2 0.1 0.0 0 25 50 75 100 125 150 o Temperature ( C) 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 µ 1m 100μ D=0.05 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 o Single Pulse. T amb=25 C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 3 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Emitter-Base Cut-Off Current DC Current Gain (Note 10) Collector-Emitter Saturation Voltage (Note 10) Base-Emitter Voltage (Note 10) Gain Bandwidth Product Collector-Base Capacitance Note: BC817-16Q BC817-40Q BC817-16Q BC817-40Q Symbol BVCBO BVCEO BVEBO Min 50 45 5 Typ — — — ICES — — IEBO — VCE(SAT) VBE — 100 250 60 170 — — — — 0.7 1.2 V V fT 100 — — MHz CCBO — — 12 pF hFE — Max — — — 100 5.0 100 250 600 Unit V V V nA µA nA Test Condition IC = 100µA IC = 10mA IC = 100µA VCE = 45V VCE = 25V, TJ = +150°C VEB = 5.0V VCE = 1.0V, IC = 100mA — VCE = 1.0V, IC = 300mA IC = 500mA, IB = 50mA VCE = 1.0V, IC = 300mA VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 500 400 300 200 100 0 1 2 V CE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector-Emitter Voltage 40 20 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage 0 0.5 VCE = 1V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 60 0 0 1,000 80 150°C TA = 25°C -50°C 100 0.4 IC / IB = 10 0.3 0.2 25°C 0.1 150°C 10 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 3 Typical DC Current Gain vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 -50°C 0 0.1 100 1,000 1 10 IC, COLLECTOR CURRENT (mA) Figure 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100 10 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 5 Gain-Bandwidth Product vs. Collector Current BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 5 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X BC817-16Q /-40Q Document number: DS38331 Rev. 2 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com March 2016 © Diodes Incorporated BC817-16Q /-40Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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