ON NTR3C21NZ Single n-channel field effect transistor Datasheet

NTR3C21NZ
Power MOSFET
20 V, 3.6 A, Single N−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Advanced Trench Technology
• Ultra−Low RDS(on) in SOT−23 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on) Max
V(BR)DSS
ID MAX
24 mW @ 4.5 V
Applications
• Power Load Switch
• Power Management
26 mW @ 3.7 V
20 V
33 mW @ 2.5 V
55 mW @ 1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
ID
3.6
A
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
2.6
t≤5s
TA = 25°C
6.5
Steady
State
TA = 25°C
tp = 10 ms
PD
3
S
2
G
1.56
13.2
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
2.2
A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
D
W
0.47
IDM
Operating Junction and Storage Temperature
N−Channel MOSFET
1
t≤5s
Pulsed Drain Current
3.6 A
29 mW @ 3.3 V
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
264
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
80
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
TRY MG
G
1
Gate
2
Source
TRY
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NTR3C21NZT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NTR3C21NZT5G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NTR3C21NZ/D
NTR3C21NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 20 V
21.6
mV/°C
TJ = 25°C
1.0
mA
TJ = 85°C
5.0
mA
±10
mA
1.0
V
IGSS
VDS = 0 V, VGS = ±8 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.45
2.7
mV/°C
VGS = 4.5 V
ID = 5 A
18
24
VGS = 3.7 V
ID = 4 A
18.5
26
VGS = 3.3 V
ID = 3 A
19
29
VGS = 2.5 V
ID = 2 A
20
33
VGS = 1.8 V
ID = 1 A
25
55
VDS = 5 V, ID = 3 A
mW
20
S
1540
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
86
Total Gate Charge
QG(TOT)
17.8
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz, VDS = 16 V
105
nC
2.1
VGS = 4.5 V, VDS = 16 V, ID = 5 A
Gate−to−Source Charge
QGS
3.0
Gate−to−Drain Charge
QGD
0.8
td(on)
7.0
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 16 V,
ID = 5 A, RG = 6.0 W
tf
ns
14
420
4670
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 2.0 A
TJ = 25°C
0.7
TJ = 125°C
0.56
1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTR3C21NZ
TYPICAL CHARACTERISTICS
VGS = 1.8 to 4.5 V
VGS = 1.5 V
8
7
VGS = 1.2 V
6
5
4
3
2
1
0
12
11
10
VDS = 10 V
9
8
7
6
5
4
TJ = 25°C
3
2
TJ = 125°C
1
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
10
9
0.5
1.0
1.5
2.0
0
1.0
1.2
1.4
40
35
30
25
20
15
10
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
30
28
TJ = 25°C
26
VGS = 1.8 V
24
22
VGS = 2.5 V
20
VGS = 4.5 V
18
16
14
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
4.5
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E+04
VGS = 4.5 V
ID = 5 A
1.4
1.3
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.8
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 5 A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50
0.6
Figure 1. On−Region Characteristics
45
1.7
1.6
1.5
0.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
50
1.0
0.2
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
12
11
TJ = 125°C
1.E+03
TJ = 85°C
1.E+02
1.E+01
−25
0
25
50
75
100
125
150
5
7
9
11
13
15
17
19
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTR3C21NZ
C, CAPACITANCE (pF)
1.E+04
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
1.E+03
COSS
CRSS
1.E+02
1.E+01
0
2
4
6
8
10
12
14
16
18
5.0
VDS = 16 V
TJ = 25°C
ID = 5 A
4.5
4.0
3.5
3.0
2.5
2.0
QGS
QGD
1.5
1.0
0.5
0
20
0
2
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6
8
10
12
14
18
16
20
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
10,000
IS, SOURCE CURRENT (A)
tf
1000
VGS = 4.5 V
VDS = 16 V
ID = 5 A
100
tr
td(on)
10
1
TJ = 125°C
1
10
0.3
100
TJ = −55°C
TJ = 25°C
0.1
1
0.5
0.4
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
td(off)
10
100 ms
1 ms
1
10 ms
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01
0.1
1
DC
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTR3C21NZ
TYPICAL CHARACTERISTICS
1000
R(t) (°C/W)
100 50% Duty Cycle
20%
10
10%
5%
1
2%
1%
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. FET Thermal Response
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5
1
10
100
1000
NTR3C21NZ
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTR3C21NZ/D