Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ General Description Features The MDP1933 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1933 is suitable device for Synchronous Rectification For Server and general purpose applications. VDS = 80V ID = 105A @VGS = 10V RDS(ON) < 7.0 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G S TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 80 V VGSS ±20 V o TC=25 C (Silicon Limited) Continuous Drain Current (1) o TC=25 C (Package Limited) 105 ID TC=100 C 67 Pulsed Drain Current IDM TC=25oC Power Dissipation 120 A o 420 157 PD o TC=100 C W 63 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 144.5 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 0.8 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Sep. 2015. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP1933– Single N-Channel Trench MOSFET 80V MDP1933 Part Number Temp. Range Package Packing RoHS Status MDP1933TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 80 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 V Drain Cut-Off Current IDSS VDS = 64V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 5.5 7.0 mΩ gfs VDS = 10V, ID = 50A - 47 - S - 59.4 - - 16.5 - - 12.3 - - 3,841 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 40V, ID = 50A, VGS = 10V VDS = 40V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 34.2 - Output Capacitance Coss - 651.7 - Turn-On Delay Time td(on) - 15.6 - - 32.7 - - 24.2 - - 15.1 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 40V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 2.5 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr - 64.3 ns Body Diode Reverse Recovery Charge Qrr - 152.7 nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 17.0A, VGS = 10V. Sep. 2015. Version 1.1 2 MagnaChip Semiconductor Ltd. MDP1933– Single N-Channel Trench MOSFET 80V Ordering Information Drain-Source On-Resistance [mΩ] 10 V 90 8.0 V 80 ID Drain Current [A] 6.0 V 70 5.0 V 60 50 40 4.5 V 30 20 7 6 VGS = 10V 5 4 4.0 V 10 3 0 0 0 1 2 3 4 10 20 5 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] 100 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 20 ※ Notes : ※ Notes : 18 1. VGS = 10 V 2. ID = 50 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 90 ID, Drain Current [A] 1.5 1.0 0.5 ID = 50A 16 14 12 10 8 TA = 25℃ 6 4 2 0.0 -50 0 -25 0 25 50 75 100 125 4 150 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 100 ※ Notes : ※ Notes : 90 100 IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 80 70 60 TA=25℃ 50 40 30 20 VGS = 0V 10 TA=25℃ 1 10 0 0 1 2 3 4 5 6 7 0.0 8 Fig.5 Transfer Characteristics Sep. 2015. Version 1.1 0.3 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP1933– Single N-Channel Trench MOSFET 80V 8 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 50A Ciss VDS = 40V 4000 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] ※ Notes ; 6 4 1. VGS = 0 V 2. f = 1 MHz 3000 Coss 2000 1000 Crss 2 0 0 5 10 0 0 10 20 30 40 50 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] 60 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 3 10 2 Fig.8 Capacitance Characteristics 120 ID, Drain Current [A] ID, Drain Current [A] 100 100 us 10 1 ms Operation in This Area is Limited by R DS(on) 1 10 ms 10 100 ms DC 0 -1 40 0 25 -1 10 60 20 Single Pulse TJ=Max rated TC=25℃ 10 80 10 0 10 1 10 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 Zθ JA(t), Thermal Response 10 D=0.5 0.2 -1 10 0.1 0.05 0.02 -2 10 0.01 -3 10 single pulse -4 10 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Sep. 2015. Version 1.1 4 MagnaChip Semiconductor Ltd. MDP1933– Single N-Channel Trench MOSFET 80V 5000 10 MDP1933– Single N-Channel Trench MOSFET 80V Package Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Sep. 2015. Version 1.1 5 MagnaChip Semiconductor Ltd. MDP1933– Single N-Channel Trench MOSFET 80V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Sep. 2015. Version 1.1 6 MagnaChip Semiconductor Ltd.