BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Revision History: 2013-01-31, Revision 3.1 Previous Revision: 2012-10-31, Revision 3.0 Page Subjects (major changes since last revision) 33 Footprint recommendation drawing added 34 Marking pattern drawing updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 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Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.21 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Signal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Measured Performance Band 7 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 22 Measured Performance Band 7 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 24 Measured Performance Band 7 Application Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 25 Measured Performance Band 7 Application Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 27 3 3.1 3.2 3.3 3.4 3.5 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 7 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 38 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 40 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 28 29 30 30 31 4 4.1 4.2 4.3 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 33 34 34 Data Sheet 4 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Data Sheet Block Diagram of Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Application Board Layout on 3-Layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Footprint Recommendation 1 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Footprint Recommendation 2 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Package Outline (top, side and bottom view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Tape & Reel Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Marking Pattern (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Data Sheet Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics, TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical switching times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Characteristics 2650 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 13 Typical Characteristics 2650 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical Characteristics 2650 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 15 Typical Characteristics 2600 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 16 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 17 Typical Characteristics 2600 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 18 Typical Characteristics 2300 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 19 Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 20 Typical Characteristics 2300 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 21 Bill ot Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 6 Revision 3.1, 2013-01-31 Single-Band UMTS LNA (2300 - 2700 MHz) 1 BGA777N7 Features Main features: • • • • • • • • • • Gain: 16 / -7 dB in high / low gain mode Noise figure: 1.2 dB in high gain mode Supply current: 4.2 / 0.5 mA in high / low gain mode Standby mode (< 2 μA typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2 kV HBM ESD protection Low external component count Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39 mm) Pb-free (RoHS compliant) package Description The BGA777N7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip. Product Name Package Chip Marking BGA777N7 TSNP-7-1 T1531 B7 Data Sheet 7 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Features 6 1 RFIN 2 VEN RFOUT Biasing & Logic Circuitry 5 RREF 4 3 VGS VCC 7 GND BGA777N7_Chip_BlD.vsd Figure 1 Data Sheet Block Diagram of Single-Band LNA 8 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC -0.3 – 3.6 V – Supply current ICC – – 10 mA – Pin voltage VPIN -0.3 – VCC+0.3 V All pins except RF input pins. Pin voltage RF Input Pins VRFIN -0.3 – 0.9 V – RF input power PRFIN – – 4 dBm – Junction temperature Tj – – 150 °C – Ambient temperature range TA -30 – 85 °C – Storage temperature range Tstg -65 – 150 °C – Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Thermal resistance junction to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter ESD hardness HBM1) RthJS Values Min. Typ. Max. – 240 – Symbol VESD-HBM Values Min. Typ. Max. – 2000 – Unit Note / Test Condition K/W – Unit Note / Test Condition V All pins 1) According to JESD22-A114 Data Sheet 9 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA = -30 ... 85 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition – Supply voltage VCC 2.6 2.8 3.0 V Supply current high gain mode ICCHG 2.8 4.2 5.8 mA Supply current low gain mode ICCLG 0.2 0.53 0.8 mA Supply current standby mode ICCOFF -0.5 0.1 2.0 μA – Logic level high VHI 1.5 2.8 3.0 V All logic pins Logic level low VLO -0.2 0.0 0.5 V Logic currents ILO -0.5 0.01 2.0 μA IHI 4.0 5.0 6.0 μA 2.5 Gain Mode Select Truth Table Table 5 Truth Table All logic pins State Control Voltage Bands 7, 38, 40 VEN VGS HG LG H L OFF ON H H ON OFF L L STANDBY1) L H 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4. 2.6 Switching Times Table 6 Typical switching times; TA = -30 ... 85 °C Parameter Settling time gainstep Data Sheet Symbol tGS Values Min. Typ. Max. – 1 5 10 Unit Note / Test Condition μs Switching LG ↔ HG Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.7 Supply Current Characteristics Supply current high gain mode versus resistance of reference resistor RREF(see Figure 2 on Page 28; low gain mode supply current is independent of reference resistor). Power Gain |S21| = f (RREF) VCC = 2.8 V, TA = 25 °C Supply Current ICC = f (RREF) VCC = 2.8 V, TA = 25 °C 17 7 6.5 16.5 6 Power Gain [dB] Icc [mA] 5.5 5 4.5 4 3.5 3 16 15.5 15 14.5 2.5 2 14 1 10 100 Data Sheet 1 10 100 RREF [kΩ] RREF [kΩ] 11 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.8 Logic Signal Characteristics Current consumption of logic inputs VEN, VGS Logic Current IEN = f (VEN) VCC = 2.8 V, TA = 25 °C Logic Current IGS = f (VGS) VCC = 2.8 V, TA = 25 °C 6 4 4 IEN [µA] IGS [µA] 6 2 0 2 0 0.5 1 1.5 2 2.5 0 3 VEN [V] Data Sheet 0 0.5 1 1.5 2 2.5 3 VGS [V] 12 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.9 Measured RF Characteristics UMTS Band 7 Table 7 Typical Characteristics 2650 MHz Band, TA = -30 °C, VCC = 2.8 V1)2) Parameter Symbol Pass band range band VII Values Min. Typ. Max. 2620 – 2690 Unit Note / Test Condition MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 2.8 3.4 4.0 mA High gain mode 0.2 0.5 0.8 mA Low gain mode 14.5 16.0 17.5 dB High gain mode -8.8 -6.3 -3.3 dB Low gain mode – -34 -25 dB High gain mode -8.8 -6.3 -3.3 dB Low gain mode 0.6 0.9 1.4 dB High gain mode 3.3 6.3 8.8 dB Low gain mode – -16 -10 dB 50 Ω, high gain mode S11LG – -11 -9 dB 50 Ω, low gain mode S22HG – -16 -10 dB 50 Ω, high gain mode S22LG – -10 -8 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -16 -9 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -7 -2 5 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 28 2) Guaranteed by device design; not tested in production. Data Sheet 13 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.10 Measured RF Characteristics UMTS Band 7 Table 8 Typical Characteristics 2650 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. 2620 – 2690 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 3.6 4.2 4.8 mA High gain mode 0.3 0.53 0.7 mA Low gain mode 14.4 15.7 17.0 dB High gain mode -9.6 -7.1 -4.1 dB Low gain mode – -34 -25 dB High gain mode -9.5 -7.0 -4.0 dB Low gain mode 0.9 1.2 1.7 dB High gain mode 3.8 6.8 9.3 dB Low gain mode – -20 -10 dB 50 Ω, high gain mode S11LG – -10 -8 dB 50 Ω, low gain mode S22HG – -20 -10 dB 50 Ω, high gain mode S22LG – -11 -9 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG -17 -10 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -5 -2 7 – dBm High gain mode Low gain mode Pass band range band VII Current consumption Gain 2) Reverse Isolation Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 28 2) Verification based on AQL; random production test.. 3) Guaranteed by device design; not tested in production. Data Sheet 14 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.11 Measured RF Characteristics UMTS Band 7 Table 9 Typical Characteristics 2650 MHz Band, TA = 85 °C, VCC = 2.8 V1)2) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 2620 – 2690 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 4.6 5.2 5.8 mA High gain mode 0.2 0.58 0.8 mA Low gain mode 13.1 14.6 16.1 dB High gain mode -10.4 -7.9 -4.9 dB Low gain mode – -34 -25 dB High gain mode -10.4 -7.9 -4.9 dB Low gain mode 1.4 1.7 2.2 dB High gain mode 4.9 7.9 10.4 dB Low gain mode – -16 -10 dB 50 Ω, high gain mode S11LG – -11 -9 dB 50 Ω, low gain mode S22HG – -20 -10 dB 50 Ω, high gain mode S22LG – -11 -9 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -17 -10 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -3 -2 9 – dBm High gain mode Low gain mode Pass band range band VII Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 28 2) Guaranteed by device design; not tested in production. Data Sheet 15 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.12 Measured RF Characteristics UMTS Band 38 Table 10 Typical Characteristics 2600 MHz Band, TA = -30 °C, VCC = 2.8 V1)2) Parameter Symbol Pass band range band XXXVIII Values Min. Typ. Max. 2570 – 2620 Unit Note / Test Condition MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 2.8 3.4 4.0 mA High gain mode 0.2 0.5 0.8 mA Low gain mode 14.7 16.2 17.7 dB High gain mode -8.5 -6.0 -3.0 dB Low gain mode – -34 -25 dB High gain mode -8.5 -6.0 -3.0 dB Low gain mode 0.6 0.9 1.4 dB High gain mode 3.0 6.0 8.5 dB Low gain mode – -15 -10 dB 50 Ω, high gain mode S11LG – -13 -10 dB 50 Ω, low gain mode S22HG – -11 -9 dB 50 Ω, high gain mode S22LG – -18 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -16 -9 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -7 -2 5 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 29 2) Guaranteed by device design; not tested in production. Data Sheet 16 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.13 Measured RF Characteristics UMTS Band 38 Table 11 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1)2) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 2570 – 2620 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 3.6 4.2 4.8 mA High gain mode 0.3 0.53 0.7 mA Low gain mode 14.2 15.5 16.8 dB High gain mode -9.4 -6.9 -3.9 dB Low gain mode – -34 -25 dB High gain mode -9.5 -7.0 -4.0 dB Low gain mode 0.9 1.2 1.7 dB High gain mode 3.8 6.8 9.3 dB Low gain mode – -15 -10 dB 50 Ω, high gain mode S11LG – -11 -9 dB 50 Ω, low gain mode S22HG – -15 -10 dB 50 Ω, high gain mode S22LG – -13 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -17 -10 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -5 -2 7 – dBm High gain mode Low gain mode Pass band range band XXXVIII Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 29 2) Guaranteed by device design; not tested in production. Data Sheet 17 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.14 Measured RF Characteristics UMTS Band 38 Table 12 Typical Characteristics 2600 MHz Band, TA = 85 °C, VCC = 2.8 V1)2) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 2570 – 2620 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 4.6 5.2 5.8 mA High gain mode 0.2 0.58 0.8 mA Low gain mode 13.4 14.9 16.4 dB High gain mode -9.9 -7.4 -4.4 dB Low gain mode – -34 -25 dB High gain mode -9.9 -7.4 -4.4 dB Low gain mode 1.4 1.7 2.2 dB High gain mode 4.4 7.4 -9.9 dB Low gain mode – -16 -10 dB 50 Ω, high gain mode S11LG – -13 -10 dB 50 Ω, low gain mode S22HG – -16 -10 dB 50 Ω, high gain mode S22LG – -15 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -18 -11 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -3 -2 9 – dBm High gain mode Low gain mode Pass band range band XXXVIII Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 29 2) Guaranteed by device design; not tested in production. Data Sheet 18 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.15 Measured RF Characteristics UMTS Band 40 Table 13 Typical Characteristics 2300 MHz Band, TA = -30 °C, VCC = 2.8 V1)2) Parameter Symbol Pass band range band XL Values Min. Typ. Max. 2300 – 2400 Unit Note / Test Condition MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 2.8 3.4 4.0 mA High gain mode 0.2 0.5 0.8 mA Low gain mode 15.8 17.3 18.8 dB High gain mode -8.7 -6.2 -3.2 dB Low gain mode – -35 -25 dB High gain mode -8.7 -6.2 -3.2 dB Low gain mode 0.6 0.9 1.4 dB High gain mode 3.2 6.2 8.7 dB Low gain mode – -17 -10 dB 50 Ω, high gain mode S11LG – -13 -10 dB 50 Ω, low gain mode S22HG – -16 -10 dB 50 Ω, high gain mode S22LG – -14 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -17 -10 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -7 -2 5 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 30 2) Guaranteed by device design; not tested in production. Data Sheet 19 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.16 Measured RF Characteristics UMTS Band 40 Table 14 Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V1)2) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 2300 – 2400 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 3.6 4.2 4.8 mA High gain mode 0.3 0.53 0.7 mA Low gain mode 15.5 16.8 18.1 dB High gain mode -9.7 -7.2 -4.2 dB Low gain mode – -35 -25 dB High gain mode -9.5 -7.0 -4.0 dB Low gain mode 0.9 1.2 1.7 dB High gain mode 4.0 7.0 9.5 dB Low gain mode – -23 -10 dB 50 Ω, high gain mode S11LG – -12 -10 dB 50 Ω, low gain mode S22HG – -15 -10 dB 50 Ω, high gain mode S22LG – -12 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -18 -11 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -5 -2 7 – dBm High gain mode Low gain mode Pass band range band XL Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 30 2) Guaranteed by device design; not tested in production. Data Sheet 20 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.17 Measured RF Characteristics UMTS Band 40 Table 15 Typical Characteristics 2300 MHz Band, TA = 85 °C, VCC = 2.8 V1)2) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 2300 – 2400 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG 4.6 5.2 5.8 mA High gain mode 0.2 0.58 0.8 mA Low gain mode 14.5 16.0 17.5 dB High gain mode -10.1 -7.6 -4.6 dB Low gain mode – -35 -25 dB High gain mode -10.1 -7.6 -4.6 dB Low gain mode 1.2 1.5 2.0 dB High gain mode 4.6 7.6 10.1 dB Low gain mode – -18 -10 dB 50 Ω, high gain mode S11LG – -13 -10 dB 50 Ω, low gain mode S22HG – -17 -10 dB 50 Ω, high gain mode S22LG – -13 -10 dB 50 Ω, low gain mode Stability factor k >1 >2.3 – Input compression point IP1dBHG IP1dBLG IIP3HG IIP3LG -19 -12 – dBm High gain mode -10 -2 – dBm Low gain mode -9 -3 -2 9 – dBm High gain mode Low gain mode Pass band range band XL Current consumption Gain Reverse Isolation Noise figure Input return loss Output return loss Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 30 2) Guaranteed by device design; not tested in production. Data Sheet 21 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.18 Measured Performance Band 7 Application High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 20 17 10 −30°C 0 Power Gain [dB] Power Gain [dB] 16 25°C 15 85°C −10 −20 −30 −40 14 −50 −60 13 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Gainstep HG-LG |ΔS21| = f ( f ) Matching |S11| = f ( f ), |S22| = f ( f ) 0 24 −5 Delta Gain [dB] |S11|, |S22| [dB] 23.5 −10 −15 S 22 −20 −30 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −30°C 85°C 22 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Data Sheet 25°C 22.5 S11 −25 23 Frequency [GHz] 22 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics Input Compression P1dB = f ( f ) 1.6 −6 1.5 −7 1.4 −8 1.3 −9 P1dB [dBm] NF [dB] Noise Figure NF = f ( f ) 1.2 1.1 −10 −11 1 −12 0.9 −13 0.8 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −14 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Data Sheet Frequency [GHz] 23 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.19 Measured Performance Band 7 Application High Gain Mode vs. Temperature TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2650 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 18 6 5.5 5 16 ICC [mA] Power Gain [dB] 17 15 4.5 4 14 13 −40 3.5 −20 0 20 40 60 80 3 −40 100 −20 0 TA [°C] −6 1.8 −7 80 100 −8 P1dB [dBm] 1.6 NF [dB] 60 Input Compression P1dB = f (TA) 2 1.4 1.2 1 −9 −10 −11 −12 0.8 −13 −20 0 20 40 60 80 −14 −40 100 TA [°C] Data Sheet 40 TA [°C] Noise Figure NF = f (TA) 0.6 −40 20 −20 0 20 40 60 80 100 TA [°C] 24 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.20 Measured Performance Band 7 Application Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −10 −30°C Power Gain [dB] Power Gain [dB] −6 −7 25°C −8 85°C −9 −20 −30 −40 −50 −10 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −60 Frequency [GHz] 0 2 4 6 8 Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) 0 −5 |S11|, |S22| [dB] S22 −10 S 11 −15 −20 −25 −30 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Data Sheet 25 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 4 10 2 0 P1dB [dBm] NF [dB] 9 8 −2 −4 7 −6 6 −8 5 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −10 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Data Sheet Frequency [GHz] 26 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Electrical Characteristics 2.21 Measured Performance Band 7 Application Low Gain Mode vs. Temperature TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2650 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.7 0.65 −6 0.55 −7 ICC [mA] Power Gain [dB] 0.6 −8 0.5 0.45 0.4 −9 0.35 −10 −40 −20 0 20 40 60 80 0.3 −40 100 −20 0 TA [°C] 20 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 10 4 9 2 0 P1dB [dBm] NF [dB] 8 7 −2 −4 6 −6 5 4 −40 −8 −20 0 20 40 60 80 −10 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 TA [°C] 27 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Application Circuit and Block Diagram 3 Application Circuit and Block Diagram 3.1 UMTS Band 7 Application Circuit Schematic L1 3.3nH C1 2.4pF L3 3.3nH RFIN 2600 MHz RFOUT RFIN L2 3.9nH VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry C2 1.5pF 5 RREF VEN VGS = 0 / 2.8 V RFOUT 2600 MHz 6 1 4 3 VGS VCC R REF 8.2k½ VCC = 2.8 V C3 10nF 7 GND BGA777N7_Appl_Band7_BlD.vsd Figure 2 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 16 Bill ot Materials Part Number Part Type Manufacturer Size Comment L1 ... L3 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 28 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Application Circuit and Block Diagram 3.2 UMTS Band 38 Application Circuit Schematic L1 3.3nH C1 2.4pF L3 3.6nH RFIN 2500 MHz RFOUT RFIN L2 4.1nH VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry C2 1.2pF 5 RREF VEN VGS = 0 / 2.8 V RFOUT 2500 MHz 6 1 4 3 VGS VCC R REF 8.2k½ VCC = 2.8 V C3 10nF 7 GND BGA777N7_Appl_Band38_BlD.vsd Figure 3 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 17 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L3 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 29 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Application Circuit and Block Diagram 3.3 UMTS Band 40 Application Circuit Schematic C1 56pF C2 10pF L2 3.6nH RFIN 2300 MHz RFOUT RFIN L1 2.7nH VEN = 0 / 2.8 V 2 Biasing & Logic Circuitry 5 RREF VEN VGS = 0 / 2.8 V RFOUT 2300 MHz 6 1 R REF 8.2k½ VCC = 2.8 V 4 3 VGS VCC C3 10nF 7 GND BGA777N7_Appl_Band40_BlD.vsd Figure 4 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 18 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 RREF Chip resistor Various 0402 3.4 Pin Definition Table 19 Pin Definition and Function Pin Number Symbol Function 1 RFIN LNA input (2600 MHz) 2 VEN Band select control 3 VGS Gain step control 4 VCC Supply voltage 5 RREF Bias current reference resistor (high gain mode) 6 RFOUT LNA output (2600 MHz) 7 GND Package paddle; ground connection for LNA and control circuitry Data Sheet 30 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Application Circuit and Block Diagram 3.5 Application Board Top layer (top view) Middle layer (top view) Bottom layer (top view) BGA777N7_App_Board.vsd Figure 5 Application Board Layout on 3-Layer FR4 Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 19mm. 0.017 mm 0.100 mm Copper Prepreg FR4 0.100 mm 0.035 mm Prepreg FR4 Copper 0.460 mm FR4 0.100 mm Prepreg FR4 0.100 mm 0.017 mm Prepreg FR4 Copper BGA777N7_Cross_Section_View.vsd Figure 6 Data Sheet Cross-Section View of Application Board 31 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Application Circuit and Block Diagram 1 VEN 2 7 RFOUT 5 RREF 4 GND VGS 3 6 VCC RFIN BGA777N7_App_Board_exact.vsd Figure 7 Detail of Application Board Layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 32 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Physical Characteristics 4 Physical Characteristics 4.1 Package Footprint NSM D SMD Copper 0.25 1.9 0.2 0.3 Copper 0.2 R0.1 0.25 0.3 Stencil apertures Solder mask 0.25 0.2 0.2 0.3 R0.1 0.25 0.3 0.2 0.25 1.9 1.9 0.2 0.25 0.2 0.3 0.25 0.2 0.2 0.25 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 Stencil apertures Solder mask TSNP-7-1-FP V01 Figure 8 Footprint Recommendation 1 for the TSNP-7-1 Package N SMD 0.5 0.25 0.25 0.18 0.4 0.1 1.95 0.18 1.1 1.95 1.2 0.25 0.25 0.25 0.25 1.25 1.25 Copper Solder mask Stencil apertures TSNP-7-1-N-FP V01 Figure 9 Data Sheet Footprint Recommendation 2 for the TSNP-7-1 Package 33 Revision 3.1, 2013-01-31 BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Physical Characteristics Package Dimensions Top view Bottom view 1.3 ±0.05 0.375 +0.025 -0.015 1.15 ±0.05 1) 0.02 MAX. 1 ±0.05 6 1.75 ±0.05 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.05 1) 1) Dimension applies to plated terminals Figure 10 2 ±0.05 5 1.1 ±0.05 1) 4 6 x 0.25 ±0.05 1) 4.2 TSNP-7-1-PO V02 Package Outline (top, side and bottom view) 4 8 2.3 0.5 1.6 Pin 1 marking Figure 11 Tape & Reel Dimensions 4.3 Product Marking Pattern TSNP-7-1-TP V01 123 Type code Date code (YYWW) Pin 1 marking TSNP-7-1-MK V01 Figure 12 Data Sheet Marking Pattern (top view) 34 Revision 3.1, 2013-01-31 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG