Renesas BCR5AS12A Triac medium power use Datasheet

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BCR5AS-12A
Triac
Medium Power Use
REJ03G0291-0200
Rev.2.00
Nov 30, 2007
Features
• IT (RMS) : 5 A
• VDRM : 600 V
• IFGTI , IRGTI, IRGT III : 30 mA
• Non-Insulated Type
• Planar Passivation Type
• Lead Mounted Type
Outline
RENESAS Package code: PRSS0004ZD-D
(Package name: DPAK(L)-3)
4
2, 4
1.
2.
3.
4.
3
1
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
12
3
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, washing
machine, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0291-0200
Page 1 of 6
Rev.2.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR5AS-12A
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
3
0.3
10
2
– 40 to +125
– 40 to +125
0.26
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
3.0
V
V
V
mA
mA
mA
V
°C/W
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5
—
—
V/µs
Tj = 125°C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 103°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0291-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR5AS-12A
Performance Curves
102
7
5
3
2
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
1.4
2.2
3.0
3.8
90
80
70
60
50
40
30
20
10
0
100
4.6
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
102
7
5
3
2 VGM = 10V
101
7
5
PG(AV) =
0.3W
3 VGT = 1.5V
2
100
7
5
3
2
PGM = 3W
IGM = 2A
IFGT I
IRGT I
IRGT III
VGD = 0.2V
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IRGT I
IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0291-0200
Page 3 of 6
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Surge On-State Current (A)
100
10–1
0.6
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
Rev.2.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR5AS-12A
Allowable Case Temperature vs.
RMS On-State Current
160
7
140
Case Temperature (°C)
8
6 360° Conduction
Resistive,
5 inductive loads
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Ambient Temperature (°C)
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
6
7
8
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
105
7
5
3
2
102
7
5
4
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Typical Example
101
7
5
4
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0291-0200
Page 4 of 6
Rev.2.00
Nov 30, 2007
Latching Current (mA)
VD = 12V
Distribution
Typical Example
104
7
5
3
2
Holding Current vs.
Junction Temperature
Holding Current (mA)
5
RMS On-State Current (A)
160
0
Curves apply regardless
of conduction angle
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
3
2
102
7
5
3
2
T2+, G+
Typical Example
T2–, G–
Distribution
T2+, G–
Typical Example
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR5AS-12A
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
7
5
4
3
2
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 4 5 7 102 2 3 4 5 7103 2 3 4 5 7104
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
100
7
100
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
6Ω
6Ω
A
6V
V
Test Procedure I
V
A
V
330Ω
Test Procedure II
6Ω
6V
A
6V
330Ω
330Ω
Test Procedure III
Rev.2.00
Nov 30, 2007
103
7
5
4
3
IRGT I
2
102
7
5
4
3
2
101 0
10
Typical Example
IRGT III
IFGT I
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
REJ03G0291-0200
Page 5 of 6
160
Rate of Rise of Off-State Voltage (V/µs)
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
4
3
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
BCR5AS-12A
Package Dimensions
Package Name
DPAK(L)-(3)
JEITA Package Code

RENESAS Code
PRSS0004ZD-D
Previous Code
DPAK(L)-(3)/DPAK(L)-(3)V
MASS[Typ.]
0.36g
Unit: mm
6.5 ± 0.5
2.3 ± 0.2
5.4 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
(1.3)
1.15 ± 0.1
0.8 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
4.7 ± 0.5
6.9 ± 0.5
5.5 ± 0.5
8.2 ± 0.6
0.55 ± 0.1
0.55 ± 0.1
0.55 ± 0.1
2.29
0.55 ± 0.1
2.29
Order Code
Lead form
Straight type
Standard packing
Vinyl sack
Quantity
100
Standard order code
Type name – A1
Note : Please confirm the specification about the shipping in detail.
REJ03G0291-0200
Page 6 of 6
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR5AS-12A-A1
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
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9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
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