IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤ = G D S D (TAB) D (TAB) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 22 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A IA EAS TC = 25°C TC = 25°C 22 750 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 350 W -55 ... +150 °C TJ D (TAB) G = Gate S = Source Features z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance TJM 150 °C Tstg -55 ... +150 °C z 300 260 °C °C Advantages 1.13/10 Nm/lb.in. TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247 & TO-3P) FC Mounting Force (PLUS220) Weight PLUS220 types TO-3P TO-247 11..65/2.5..14.6 N/lb. 4.0 5.5 6.0 g g g z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D = Drain TAB = Drain z z V z 5.5 V z ± 100 nA 5 50 μA μA Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 270 mΩ DS99351G(07/09) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 12 Ciss Coss 20 S 2880 pF 310 pF 29 pF 22 ns 25 ns 72 ns 21 ns 50 nC 16 nC 18 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.35 °C/W RthJC RthCS (TO-247, PLUS220 & TO-3P) °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 22A, -di/dt = 100A/μs VR = 100V, VGS = 0V 400 ns Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) Outline PLUS220 (IXTV) Outline E E1 A A1 L2 E E1 E1 A A1 L2 E1 D1 D D A3 L3 L3 L1 L4 L L1 L 2X b c e A2 3X b 2X e c A2 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 b c D D1 E E1 e L L1 L2 L3 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 TO-3P (IXTQ) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain TO-247 (IXTH) Outline Dim. ∅P 1 Terminals: 1 - Gate © 2009 IXYS CORPORATION, All Rights Reserved 2 3 2 - Drain A A1 A2 Millimeter Min. Max. 4.7 5.3 2.2 2.54 2.2 2.6 Inches Min. Max. .185 .209 .087 .102 .059 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 0.225 .780 .800 .177 ∅P Q R 3.55 5.89 4.32 3.65 6.40 5.49 .140 .144 0.232 0.252 .170 .216 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 55 22 VGS = 10V 8V 7V 20 18 45 16 40 ID - Amperes ID - Amperes VGS = 10V 8V 50 14 12 6V 10 30 25 6V 8 20 6 15 4 7V 35 10 5V 2 5V 5 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 25 30 Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature 22 3.2 VGS = 10V 7V 20 VGS = 10V 2.8 16 R DS(on) - Normalized 18 ID - Amperes 20 VDS - Volts 6V 14 12 10 8 6 2.4 I D = 22A 2.0 I D = 11A 1.6 1.2 5V 4 0.8 2 0 0.4 0 2 4 6 8 10 12 -50 14 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 24 3.4 VGS = 10V 3.0 20 2.6 16 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.2 1.8 12 8 1.4 TJ = 25ºC 4 1.0 0.6 0 0 5 10 15 20 25 30 35 40 45 50 55 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Fig. 7. Input Admittance Fig. 8. Transconductance 40 40 35 35 30 30 TJ = - 40ºC 20 g f s - Siemens ID - Amperes 25ºC TJ = 125ºC 25ºC - 40ºC 25 15 25 15 10 10 5 5 0 125ºC 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 24 28 32 36 Fig. 10. Gate Charge 10 80 VDS = 250V 9 70 I D = 11A 8 60 I G = 10mA 7 50 VGS - Volts IS - Amperes 16 ID - Amperes 40 TJ = 125ºC 30 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100.0 f = 1 MHz RDS(on) Limit 100µs 1,000 10.0 ID - Amperes Capacitance - PicoFarads 25µs Ciss Coss 100 1.0 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss DC 10 10ms 100ms 0.1 0 5 10 15 20 25 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 30 35 40 10 100 VDS - Volts 1000 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_22N50P(63)07-22-09-B