ON NVTFS5C454NL Power mosfet Datasheet

NVTFS5C454NL
Power MOSFET
40 V, 4.0 mW, 85 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5C454NLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V(BR)DSS
RDS(on) MAX
ID MAX
4.0 mW @ 10 V
40 V
85 A
6.9 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
85
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1 & 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
60
PD
Steady
State
ID
14
PD
MARKING DIAGRAM
W
3.2
1
1.6
IDM
520
A
TJ, Tstg
−55 to
+175
°C
IS
61
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
EAS
202
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
S (1, 2, 3)
A
20
TA = 100°C
TA = 25°C, tp = 10 ms
G (4)
27
TA = 100°C
TA = 25°C
W
55
TC = 100°C
TA = 25°C
N−Channel
D (5 − 8)
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
2.7
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 2
1
Publication Order Number:
NVTFS5C454NL/D
NVTFS5C454NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
3.3
4.0
mW
VGS = 4.5 V, ID = 20 A
5.5
6.9
gFS
VDS = 15 V, ID = 40 A
80
S
Input Capacitance
Ciss
1600
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Reverse Transfer Capacitance
Crss
21
Total Gate Charge
QG(TOT)
8.2
nC
Threshold Gate Charge
QG(TH)
2
nC
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.2
CHARGES AND CAPACITANCES
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V, ID = 40 A
590
3.8
2.1
VGS = 10 V, VDS = 20 V, ID = 40 A
18
nC
9.3
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 20 V,
ID = 40 A
tf
100
17
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
29
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 40 A
QRR
www.onsemi.com
2
V
ns
14
15
20
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVTFS5C454NL
TYPICAL CHARACTERISTICS
80
80
VDS = 10 V
10 V to 3.6 V
70
50
40
2.8 V
30
20
60
50
40
30
TJ = 25°C
20
10
10
0
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
3.2 V
60
0.5
1.0
1.5
2.0
2.5
3.0
TJ = −55°C
2
3
5
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 20 A
18
16
14
12
10
8
6
4
2
3
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
TJ = 25°C
7
6
VGS = 4.5 V
5
4
VGS = 10 V
3
2
0
10
20
30
40
50
60
70
80
90 100
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.E+05
1.9
VGS = 10 V
ID = 20 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
TJ = 175°C
IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
2
TJ = 125°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
70
1.E+04
TJ = 125°C
1.E+03
TJ = 85°C
1.E+02
1.E+01
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
40
NVTFS5C454NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
10
0
5
10
15
20
25
30
35
40
10
QT
9
8
7
6
5
QGD
QGS
4
3
VDS = 20 V
ID = 40 A
TJ = 25°C
2
1
0
0
2
4
6
8
10
12
14
18
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
tr
t, TIME (ns)
100
td(off)
tf
10
1
td(on)
VGS = 4.5 V
VDD = 20 V
ID = 40 A
1
10
10
1
0.1
0.01
0.001
100
TJ = 25°C
TJ = −55°C
TJ = 125°C
0.2
0
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
500 ms
100
10 ms
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
1 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
TJ (initial) = 100°C
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
0.1
TJ (initial) = 25°C
10
1
10
1E−4
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
1E−2
NVTFS5C454NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS5C454NLTAG
454L
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5C454NLWFTAG
54LW
WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVTFS5C454NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.80
0.70
0.75
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NVTFS5C454NL/D