ON NSVBCX17LT1G General purpose transistor Datasheet

BCX17LT1G, PNP
BCX18LT1G, PNP
BCX19LT1G, NPN
SBCX19LT1G, NPN
General Purpose
Transistors
www.onsemi.com
Voltage and Current are Negative for
PNP Transistors
SOT−23
(TO−236)
CASE 318−08
STYLE 6
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PNP
NPN
COLLECTOR
3
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
BCX17, BCX19
BCX18
VCEO
Collector − Base Voltage
BCX17, BCX19
BCX18
VCBO
Emitter − Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
556
°C/W
Collector Current − Continuous
1
BASE
1
BASE
Vdc
45
25
2
EMITTER
Vdc
50
30
MARKING DIAGRAM
XX M G
G
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
2
EMITTER
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
1
XX
M
G
= T1, T2 or U1
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 9
1
Publication Order Number:
BCX17LT1/D
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BCX17, BCX19, SBCX19
BCX18
V(BR)CEO
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IC = 0)
BCX17, BCX19, SBCX19
BCX18
V(BR)CES
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
45
25
−
−
−
−
Vdc
50
30
−
−
−
−
−
−
−
−
100
5.0
−
−
10
100
70
40
−
−
−
600
−
−
−
−
0.62
−
−
1.2
nAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BCX17LT1G
NSVBCX17LT1G*
BCX18LT1G
BCX19LT1G
SBCX19LT1G*
Specific Marking
Package
Shipping†
T1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
T1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
T2
SOT−23
(Pb−Free)
3,000 / Tape & Reel
U1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
U1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
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2
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
hFE, DC CURRENT GAIN
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
1.0
1.0
TJ = 25°C
TA = 25°C
0.8
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0
0.1
1
IB, BASE CURRENT (mA)
10
100
1
Figure 2. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 3. “On” Voltages
100
+1
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0
-1
qVB for VBE
-2
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1
0.1
1000
Figure 4. Temperature Coefficients
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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3
100
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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