BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors www.onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 (TO−236) CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PNP NPN COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector − Base Voltage BCX17, BCX19 BCX18 VCBO Emitter − Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C 556 °C/W Collector Current − Continuous 1 BASE 1 BASE Vdc 45 25 2 EMITTER Vdc 50 30 MARKING DIAGRAM XX M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA 2 EMITTER PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C 1 XX M G = T1, T2 or U1 = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 November, 2016 − Rev. 9 1 Publication Order Number: BCX17LT1/D BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) BCX17, BCX19, SBCX19 BCX18 V(BR)CEO Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IC = 0) BCX17, BCX19, SBCX19 BCX18 V(BR)CES Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc 45 25 − − − − Vdc 50 30 − − − − − − − − 100 5.0 − − 10 100 70 40 − − − 600 − − − − 0.62 − − 1.2 nAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device BCX17LT1G NSVBCX17LT1G* BCX18LT1G BCX19LT1G SBCX19LT1G* Specific Marking Package Shipping† T1 SOT−23 (Pb−Free) 3,000 / Tape & Reel T1 SOT−23 (Pb−Free) 3,000 / Tape & Reel T2 SOT−23 (Pb−Free) 3,000 / Tape & Reel U1 SOT−23 (Pb−Free) 3,000 / Tape & Reel U1 SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 Figure 2. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. “On” Voltages 100 +1 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0 -1 qVB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 4. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances www.onsemi.com 3 100 BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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