Diode Semiconductor Korea MUR2005C - - - MUR2060C VOLTAGE RANGE: 50 --- 600 V CURRENT: 20 A SUPER FAST RECT IFIERS FEATURES TO-220AB 2.8± 0.1 Low cos t Low leakage 4.5± 0.2 10.2± 0.2 1.4± 0.2 φ 3.8± 0.15 19.0± 0.5 High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents 1 8.9± 0.2 Low forward voltage drop PIN 2 3 The plas tic m aterial carries U/L recognition 94V-0 3.5± 0.3 13.8± 0.5 2.6± 0.2 MECHANICAL DATA Cas e:JEDEC TO-220AB,molded plastic Term inals : Solderable per 0.9± 0.1 0.5± 0.1 2.5± 0.1 MIL- STD-750,Method 2026 Polarity: As marked PIN 1 PIN 1 PIN 1 PIN 3 Positive CT CASE PIN 2 PIN 3 Negative CT Suffix "A" Weight: 0.071ounce, 2.006 grams CASE PIN 2 PIN 3 Doubler Suffix "D" CASE PIN 2 Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. MUR MUR MUR MUR MUR MUR 2005C 2010C 2015C 2020C 2040C 2060C UNITS Maximum recurrent peak reverse voltage V RR M 50 100 150 200 400 600 V Maximum RMS voltage VRMS 35 70 105 140 280 420 V Maximum DC blocking voltage V DC 50 100 150 200 400 600 V Maximum average f orw ard rectif ied current @TC = 95 IF(AV) 20 A IFSM 125 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage VF @ 10A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =150 Maximum reverse recovery time (Note1) Operating junction temperature range Storage temperature range IR t rr 1.3 0.975 1.5 5.0 10.0 250 500 25 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 V A ns NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.diode.kr Diode Semiconductor Korea MUR2005C- - - MUR2060C FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 0 -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- PEAK FORWARD SURGE CURRENT 60 20 UR 10 1.0 0.1 .4 Tj=25oC Pulse Width=300 s 1% Duty Cycle .6 .8 1.0 1.2 1.4 1.6 1.8 100 AMPERES PEAK FORWARD SURGE CURRENT C C 40 20 M UR 100 M MU R2 00 5C ~M UR 20 20 C 125 8 .3 m s S in g le H a lf S in e W a v e T J= 1 2 5 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS z FIG.4-FORWORD DERATING CURVE 12 20 AMPERES AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT 1000 16 12 Single Phase Half Wave 60HZ Resistive or Inductive Load 10 8.0 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, www.diode.kr