Diodes DMP2123LQ-7 P-channel enhancement mode field effect transistor Datasheet

DMP2123LQ
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data

Low RDS(ON)
72mΩ @VGS = -4.5V
108mΩ @VGS = -2.7V
123mΩ @VGS = -2.5V





Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)


Case: SOT23
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (Approximate)




SOT23
D ra in
D
G a te
S
G
S o u rc e
Top View
Internal Schematic
Top View
Ordering Information (Note 5)
Part Number
DMP2123LQ-7
DMP2123LQ-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
M1P
Date Code Key
Year
Code
2007
U
…
…
Month
Code
Jan
1
Feb
2
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
2015
C
Mar
3
M1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
Features
2016
D
Apr
4
2017
E
May
5
2018
F
Jun
6
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2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
2023
K
Dec
D
October 2015
© Diodes Incorporated
DMP2123LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
12
V
ID
-3.0
-2.4
A
IDM
-15
A
IS
-2.0
A
Symbol
Value
Unit
Drain Current (Note 6) Continuous
NEW PRODUCT
Value
TA = +25°C
TA = +70°C
Pulsed Drain Current (Note 7)
Body-Diode Continuous Current (Note 6)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6); Steady-State
Operating and Storage Temperature Range
PD
1.4
W
RθJA
90
C/W
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-20


V
ID = -250µA, VGS = 0V
µA
VDS = -20V, VGS = 0V
IDSS


-1
IGSS


100
nA
VDS = 0V, VGS = 12V
VGS(TH)
-0.6

-1.25
V
VDS = VGS, ID = -250µA
ID(ON)
-15


A
VGS = -4.5V, VDS = -5V
RDS(ON)

51
87
99
72
108
123
mΩ
VGS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
Forward Transconductance (Note 8)
gFS

7.3

S
VDS = -10V, ID = -3.0A
Diode Forward Voltage (Note 6)
VSD

-0.79
-1.26
V
IS = -1.7A, VGS = 0V
IS


-1.7
A
Total Gate Charge
Qg

7.3

nC
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Source Charge
Qgs

2.0

nC
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Drain Charge
Qgd

1.9

nC
VGS = -4.5V, VDS = -10V, ID = -3.0A
tD(ON)

12

ns
Turn-On Rise Time
tR

20

ns
Turn-Off Delay Time
tD(OFF)

38

ns
Zero Gate Voltage Drain Current
TJ = +25°C
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 8)
Static Drain-Source On-Resistance (Note 8)
Maximum Body-Diode Continuous Current (Note 6)

DYNAMIC PARAMETERS (Note 9)
Turn-On Delay Time
tF

41

ns
Input Capacitance
Ciss

443

pF
Output Capacitance
Coss

128

pF
Reverse Transfer Capacitance
Crss

101

pF
Turn-Off Fall Time
Notes:
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6Ω
VDS = -16V, VGS = 0V
f = 1.0MHz
6. Device mounted on 1" x 1", FR-4 PC board with 2 oz. copper and test pulse width t 10s.
7. Repetitive Rating, pulse width limited by junction temperature.
8. Test pulse width t = 300µs.
9. Guaranteed by design. Not subject to product testing.
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
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October 2015
© Diodes Incorporated
DMP2123LQ
NEW PRODUCT
VDS = -5V
Pulsed
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
CT, CAPACITANCE (pF)
Ciss
VGS = -2.5V
Coss
Crss
f = 1 MHz
VGS = 0V
VGS = -4.5V
VGS = -10V
0
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
-ID = 250µ A
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 4 Typical Total Capacitance
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS = -4.5V
ID = -3.0A
VGS = -10V
ID = -3.5A
VGS = -2.5V
ID = -1.0A
o
C)
TA, AMBIENT TEMPERATURE ((C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
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DMP2123LQ
100
PW = 10µs
-ID, DRAIN CURRENT (A)
NEW PRODUCT
RDS(on)
Limited
10
1
DC
PW = 10s
PW = 1s
PW = 100ms
0.1
PW = 10ms
PW = 1ms
PW = 100µs
100祍
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 SOA, Safe Operation Area
100
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
G
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
Y
Z
C
X
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
E
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DMP2123LQ
IMPORTANT NOTICE
NEW PRODUCT
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Copyright © 2015, Diodes Incorporated
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Document number: DS38317 Rev. 2 - 2
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